• Title/Summary/Keyword: GATE 시뮬레이션

Search Result 433, Processing Time 0.025 seconds

Simulation Model Development for Configuring a Optimal Port Gate System (최적 항만 게이트 시스템 구성을 위한 시뮬레이션 모델 개발)

  • Park, Sang-Kook;Kim, Young-Du
    • Journal of Navigation and Port Research
    • /
    • v.40 no.6
    • /
    • pp.421-430
    • /
    • 2016
  • In this study, a gate simulation model was developed to reduce the truck waiting time for trucking companies servicing container terminals. To verify the developed model, 4 weeks of truck gate-in/gate-out data was collected in December 2014 at the Port of Busan New Port. Also, the existing gate system was compared to the proposed gate system using the developed simulation model. The result showed that based on East gate-in, a maximum number of 50 waiting trucks with a maximum waiting time of 120 minutes. With the proposed system the maximum number of waiting trucks was 10 with a maximum waiting time of 5.3 minutes. Based on West gate-in, the maximum number of waiting trucks was 17 and the maximum waiting time was 34 minutes in the existing gate system. With the proposed system the maximum number of waiting trucks was 10 with a maximum waiting time of 5.3 minutes. Based on West gate-out, the maximum number of waiting trucks was 11 with a maximum waiting time of 5.5 minutes. With the proposed system the maximum number of waiting trucks was 9 with a maximum waiting time of 4.4 minutes. This developed model shows how many waiting trucks there are, depending on the gate-in/gate-out time of each truck. This system can be used to find optimal gate system operating standards by assuming and adjusting the gate-in/gate-out time of each truck in different situations.

Prediction-Based Parallel Gate-Level Timing Simulation Using Spatially Partial Simulation Strategy (공간적 부분시뮬레이션 전략이 적용된 예측기반 병렬 게이트수준 타이밍 시뮬레이션)

  • Han, Jaehoon;Yang, Seiyang
    • KIPS Transactions on Computer and Communication Systems
    • /
    • v.8 no.3
    • /
    • pp.57-64
    • /
    • 2019
  • In this paper, an efficient prediction-based parallel simulation method using spatially partial simulation strategy is proposed for improving both the performance of the event-driven gate-level timing simulation and the debugging efficiency. The proposed method quickly generates the prediction data on-the-fly, but still accurately for the input values and output values of parallel event-driven local simulations by applying the strategy to the simulation at the higher abstraction level. For those six designs which had used for the performance evaluation of the proposed strategy, our method had shown about 3.7x improvement over the most general sequential event-driven gate-level timing simulation, 9.7x improvement over the commercial multi-core based parallel event-driven gate-level timing simulation, and 2.7x improvement over the best of previous prediction-based parallel simulation results, on average.

터미널 게이트의 유비쿼터스 연계효과에 대한 연구

  • Kim, Hyeon
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
    • /
    • 2007.12a
    • /
    • pp.309-310
    • /
    • 2007
  • 컨테이너터미널의 Gate는 컨테이너의 출입구를 의미하는 것 외에 컨테이너 정보의 최초 입력점이라는 중요한 의미를 가지고 있다. 따라서 컨테이너 정보의 정확한 습득을 위해 다양한 컨테이너 변호 인식방법이 사용되고 있으며, 이러한 적용방법에 따라 Gate의 생산성에도 많은 차이가 발생하고 있다. 최근, 정부의 u-IT사업추진에 따라 적용되기 시작한 RFID를 이용한 Gate자동화 방식은 기존시스템에 대한 새로운 접근을 요구하게 되었다. RFID를 이용함에 따라 각 시스템의 단점을 보완하는 정성적 이점과 더불어 정량적 생산성 향상이라는 기대치도 높아지게 되었다. 따라서 본 연구에서는 RFID를 이용한 Gate 자동화 시스템과 기존의 Gate시스템과의 생산성 차이를 시뮬레이션을 통해 검증함으로써 RFID 방식의 Gate를 고려하고 있는 컨테이너터미널에 관련된 정보를 제공하고자 하였다.

  • PDF

Optimization of Side Gate in the Design for Nano Structure Double Gate MOSFET (나노 구조 Double Gate MOSFET 설계시 side gate의 최적화)

  • 김재홍;고석웅;정학기
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2002.11a
    • /
    • pp.490-493
    • /
    • 2002
  • In this study, we have investigated optimum value for side gate length and side gate voltage of double gate (DG) MOSFET with main gate and side gate. We know that optimum side gate voltage for each side length is about 3V. Also, we know that optimum side gate length for each main gate length is about 70nm. We have presented the transconductance and subthreshold slope for each side gate length. We have simulated using ISE-TCAD tool for characteristics analysis of device.

  • PDF

Automatic synthesis of gate-level timed circuits (게이트 레벨 동기 회로의 자동 합성에 관한 연구)

  • 김현기;신원철;안종복;이천희
    • Proceedings of the Korea Society for Simulation Conference
    • /
    • 1997.04a
    • /
    • pp.36-38
    • /
    • 1997
  • 본 논문은 gate-level timed circuits의 자동 합성과 검증에 대한 것으로, 동기 회 로는 디자인을 최적화하기 위해 합성 절차가 사용된 동안 설계서에 명시된 시간 정보에 속 한 비동기 회로의 일부로서 이 시스템은 열거된 일반적인 회로 작용과 시간의 요구 조건에 대해 설계를 해석한다. 이 설계는 영향을 미치는 상태 공간을 구하기 위해 정확하고 효과적 인 시간 해석 알고리즘을 사용해 해석할 수 있는 그래픽 표현으로 자동적으로 변환된다. 이 상태공간으로부터 합성 절차는 standard-cells과 gate-arrays와 같은 반 주문형 반도체로 매핑을 용이하게 하기 위해 기본 게이트만을 사용해 어려움을 해결하는 시간에 대한 회로 유도된다.

  • PDF

Side gate length dependent C-V Characteristic for Double gate MOSFET (Side gate 길이에 따른 Double gate MOSFET의 C-V 특성)

  • 김영동;고석웅;정학기;이종인
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2004.05b
    • /
    • pp.661-663
    • /
    • 2004
  • In this paper, we have investigated characteristics of C-V for double gate MOSFET with main gate and side gate by the variation of side sate length and side gate voltage. Main gate voltage is changed from -5V to +5V. We know that characteristics of C-V is good under the condition of LSG=70nm, VSG=3V, VD=2V. We have analyze characteristics of device by ISE-TCAD.

  • PDF

A Study on SCR-Based ESD Protection Circuit with PMOS (PMOS가 삽입된 SCR 기반의 ESD 보호 회로에 관한 연구)

  • Kwak, Jae-Chang
    • Journal of IKEEE
    • /
    • v.23 no.4
    • /
    • pp.1309-1313
    • /
    • 2019
  • In this paper, the electrical characteristics of Gate grounded NMOS(GGNMOS), Lateral insulated gate bipolar transistor(LIGBT), Silicon Controlled Rectifier(SCR), and Proposed ESD protection device were compared and analyzed. First, the trigger voltage and holding voltage were verified by simulating the I-V characteristic curve for each device. After that, the robustness was confirmed by HBM 4k simulation for each device. As a result of HBM 4k simulation, the maximum temperature of the proposed ESD protection device is lower than that of GGNMOS and GGLIGBT and SCR, which means that the robustness is improved, which means that the ESD protection device is excellent in terms of reliability.

A Design of Parity Checker/Generator Using Logic Gate for Low-Power Consumption (저 전력용 논리회로를 이용한 패리티체커 설계)

  • Lee, Jong-Jin;Cho, Tae-Won;Bae, Hyo-Kwan
    • Journal of the Institute of Electronics Engineers of Korea SC
    • /
    • v.38 no.2
    • /
    • pp.50-55
    • /
    • 2001
  • In this paper, a 8bit parity checker/generator is designed using a new gate which is proposed to implement the exclusive or(XOR) and exclusive-nor(XNOR) functions for low power consumption on transistor level. Conventional XOR/XNOR gate such as CPL, DPL and CCPL designed to reduce the power consumption has an inverter to get the full swing output signals. But this inverter consumes the major part of power and causes the time delay on CMOS circuits. Thus a new technique was adopted not utilizing inverter in the circuits. The results of simulation by Hspice shows 33% of power reduction compared with CCPL gate when A 8 bit parity checker was made with the proposed new gate using $0.8{\mu}mCMOS$ technology.

  • PDF

A Study on the Circuit Design Methodology and Performance Evaluation for Hybrid Gate Driver (하이브리드 게이트 드라이버를 위한 회로 디자인 방법과 성능 평가에 관한 연구)

  • Cho, Geunho
    • Journal of IKEEE
    • /
    • v.25 no.2
    • /
    • pp.381-387
    • /
    • 2021
  • As Head-Mounted Displays(HMDs), which are mainly used to maximize realism in games and videos, have experienced increased demand and expanded scope of use in education and training, there is growing interest in methods to enhance the performance of conventional HMDs. In this study, a methodology to utilize Carbon NanoTubes(CNTs) to improve the performance of gate drivers that send control signals to each pixel circuit of the HMD is discussed. This paper proposes a new circuit design method that replaces the transistors constituting the buffer part of the conventional gate driver with transistors incorporating CNTs and compare the performance of the suggested gate drive with that of a gate driver comprising only conventional transistors via simulations. According to the simulation results, by including CNTs in the gate driver, the output voltage can be increased by approximately 0.3V compared to the conventional gate driver high voltage(1.1V) at a speed of 12.5 GHz and the gate width also can be reduced by up to 20 times.

Application of Total Variation Algorithm in X-ray Phantom Image with Various Added Filter Thickness : GATE Simulation Study (다양한 두께의 부가 여과판을 적용한 X-선 영상에서의 Total Variation 알고리즘 적용 : GATE 시뮬레이션 연구)

  • Park, Taeil;Jang, Sujong;Lee, Youngjin
    • Journal of the Korean Society of Radiology
    • /
    • v.13 no.5
    • /
    • pp.773-778
    • /
    • 2019
  • Images using X-rays are essential to diagnosis, but noise is inevitable in the image. To compensate for this, a total variation (TV) algorithm was presented to reduce the patient's exposure dose while increasing the quality of the images. The purpose of this study is to verify the effect on the image quality in radiographic imaging according to the thickness of the additional filtration plate through simulation, and to evaluate the usefulness of the TV algorithm. By using the Geant4 Application for Tomographic Emissions (GATE) simulation image, the actual size, shape and material of the Polymethylmethacrylate (PMMA) phantom were identical, the contrast to noise ratio (CNR) and coefficient of variation (COV) were compared. The results showed that the CNR value was the highest and the COV the lowest when applying the TV algorithm. In addition, we can acquire superior CNR and COV results with 0 mm Al in all algorithm cases.