• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.147-155
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• 2006

In this paper, we propose a new Mushroom-like PBG concepts for designing with forbidden frequency band-gap at low frequency. These design rules are based on enhancing the capacitance per unit area using modified top-patch of mushroom PBG with no increase on the overall thickness of the substrate board. Also, in this paper, a new approach to suppress the surface wave from antenna is proposed by embedding compact mushroom PBG in the substrate. Comparisons between the results from a conventional patch antenna to a patch antenna on a PBG substrate show that the reduction in the surface wave level is remarkable. This can be observed in the radiation pattern and the maximum gain. The maximum gain for reference patch antenna is $6.43dB{\imath}$ at 5.37 GHz, while the maximum gain for the patch antenna with normal mushroom and vane mushroom PBG is $7.24dB{\imath}\;and\;7.53dB{\imath}$at 5.14 GHz. The back radiation is also considerably reduced; this will lead, of course, to an increase in the antenna efficiency.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.553-557
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• 1999

In order to investigate the optical properties of the $Al_XGa_{1-X}N/GaN$ thin film grown by metalorganic chemical vapor deposition (MOCVD) method, the photoluminescene (PL), photocurrent (PC) and persistent photoconductivity (PPC) measurements were carried out at room temperature. The band gap of the $A1_x$$Ga_{1-x}$N/GaN was determined to 3.70 eV by the PL and PC measurements. The PC measurement on the light illumination from the top of the $A1_x$$Ga_{1-x}$N/GaN thin film provides peaks at 3.70, 3.43, and around 2.2 eV. The PC spectrum by the illumination passing through from the substrate of the sample can be shown at 3.43 eV together with a broad tail band from the GaN band edge to around 2.23 eV. The photocurrent quenching and anomalous PPC decay observed in PPC measurements indicate that metastable electron states are fomed in the band gap of GaN layer to trap electrons which can be tunneled the potential barrier for long recovery time.

• Development and Reproduction
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• v.21 no.3
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• pp.317-325
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• 2017

Direct communication between neighboring cells through connexin (Cx)-based gap junction is a crucial biological manner to regulate functions of a tissue consisting of multi-cell types. The present research evaluated expressional changes of Cx isoforms in the caput epididymis of adult rat exposed to estradiol benzoate (EB) or flutamide (Flu) at the early postnatal age. A single subcutaneous administration of EB at a low-dose [$0.015{\mu}g/kg$ body weight (BW)] or a high-dose ($1.5{\mu}g/kg\;BW$) or Flu at a low-dose ($500{\mu}g/kg\;BW$) or a high-dose (5 mg/kg BW) was performed to an animal at 1 week of age. Quantitative real-time PCR analysis was employed to determine expressional changes of Cx isoforms. The transcript levels of Cxs30.3 and 37 were decreased by a low-dose EB treatment, while decreases of Cxs31, 31.1, 32, 40, and 45 transcript levels were observed with a low-dose EB treatment. The treatment of a high-dose EB resulted in expressional reduction of Cxs30.3, 31, 31.1, 37, 40, 43, and 45. The Flu treatment at a low dose caused increases of Cxs26, 37, and 40 transcript levels but decreases of Cxs31.1, 43, and 45 transcript levels. Increases of Cxs30.3, 31, 37, and 40 mRNA amounts were induced by a high-dose Flu treatment. However, exposure to a high-dose Flu produced expressional decreases of Cxs31.1, 32, and 43 in the adult caput epididymis. These observations suggest that exposure to EB or Flu at the neonatal period could lead to aberrant expression of Cx isoforms in the adult caput epididymis.

• The Journal of Korean Academy of Prosthodontics
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• v.37 no.6
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• pp.825-834
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• 1999

Recently, various implant cylinders were supplied. especially received gold cylinders, cast cylinders produced from premade gold and plastic cylinders and plastic cylinders. This study measured and compared precise fit produced when using conventional gold and plastic cylinders. The comparative fit of lapped and non-lapped castings made from plastic pattern was examined. The implant/abutment interface fit was evaluated by scanning electron microscopy(SEM) for each of four cylinders. The following results were obtained: 1. The case of plastic cylinder showed $9.67{\pm}1.50{\mu}m$ gap when Steri-Oss fixture was connected. 2. The case of lapped casting made from plastic cylinder showed $3.01{\pm}2.81{\mu}m$ gap when Steri-Oss fixture was connected. 3 The case of gold/plastic cylinder showed $9.80{\pm}1.68{\mu}m$ gap when Steri-Oss fixture was connected. 4. The case of gold cylinder showed ${5.47{\pm}2.43\mu}m$ gap when Steri-Oss fixture was connected. 5. In case of each cylinder which was connected with Steri-Oss fixture, the size of gap was showed less in the order of the case of gold/plastic cylinder, the case of plastic cylinder, the case of gold cylinder and the case of lapped casting made from plastic cylinder As results of this study, the use of premade gold cylinder offers an advantage over plastic pat-terns in precise fit. When plastic patterns are used, polishing of implant cylinder components should provide precise fit.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.42-43
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• 2002

반도체 디바이스의 발전은 높은 직접화 및 동작 속도를 추구하고 있으며, 이를 위해서 MOSFET의 scale down시 발생되는 문제를 해결해야만 한다. 특히, Channel이 짧아짐으로써 발생하는 device의 열화현상으로 동작전압의 조절이 어려워 짐을 해결해야만 하며, gate oxide 두께를 줄임으로써 억제할 수 있다고 알려져 왔다. 현재, gate oxide으로 사용되고 있는 SiO2박막은 비정질로써 ～8.7 eV의 높은 band gap과 Si기판 위에서 성장이 용이하며 안정하다는 장점이 있으나, 두께가 1.6 nm 이하로 얇아질 경우 전자의 direct Tunneling에 의한 leakage current 증가와 gate impurity인 Boron의 channel로의 확산, 그리고 poly Si gate의 depletion effect[1,2] 등의 문제점으로 더 이상 사용할 수 없게 된다. 2001년 ITRS에 의하면 ASIC제품의 경우 2004년부터 0.9～l.4 nm 이하의 EOT가 요구된다고 발표하였다. 따라서, gate oxide의 물리적인 두께를 증가시켜 전자의 Tunneling을 억제하는 동시에 유전막에 걸리는 capacitance를 크게 할 수 있다는 측면에서 high-k 재료를 적용하기 위한 연구가 진행되고 있다[3]. High-k 재료로 가능성 있는 절연체들로는 A1₂O₃, Y₂O₃, CeO₂, Ta₂O, TiO₂, HfO₂, ZrO₂,STO 그리고 BST등이 있으며, 이들 재료 중 gate oxide에 적용하기 위해 크게 두 가지 측면에서 고려해야 하는데, 첫째, Si과 열역학적으로 안정하여 후속 열처리 공정에서 계면층 형성을 배제하여야 하며 둘째, 일반적으로 high-k 재료들은 유전상수에 반비례하는 band gap을 갖는 것으로 알려줘 있는데 이 Barrier Height에 지수적으로 의존하는 leakage current때문에 절연체의 band gap이 낮아서는 안 된다는 점이다. 최근 20이상의 유전상수와 ～5 eV 이상의 Band Gap을 가지며 Si기판과 열역학적으로 안정한 ZrO₂[4], HfiO₂[5]가 관심을 끌고 있다. HfO₂은 ～30의 고유전상수, ～5.7 eV의 높은 band gap, 실리콘 기판과의 열역학적 안전성 그리고 poly-Si와 호환성등의 장점으로 최근 많이 연구가 진행되고 있다. 또한, Hf은 SiO₂를 환원시켜 HfO₂가 될 수 있으며, 다른 silicide와 다르게 Hf silicide는 쉽게 산화될 수 있는 점이 보고되고 있다.

• The Journal of Korean Academy of Prosthodontics
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• v.40 no.1
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• pp.30-41
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• 2002

This study was to evaluate the fabrication method and marginal adaptation of the conical inner crown fabricated with CAD/CAM. The informations on abutment teeth were transferred to a computer with a micro contact digitizer, which had a $50{\mu}m$ accuracy on the master die. A conical inner crown was designed on a computer and a real crown was machined based on this design using CAM. The marginal fit of a computer-machined conical inner crown was assessed using electron microscopy Measurement of the marginal gap between the conical inner crown and the abutment was performed on four different locations (mesial, distal, buccal, and lingual surfaces) of the finish line. The evaluation was based on 10 test specimens. The results were as follow. 1 The mean marginal gap between the conical inner crown and abutment tooth was $83.2{\pm}43{\mu}m$, 28.9% of the specimen showed marginal gap over $100{\mu}m$. 2. The fabrication method using CATRS and CAM provided clinically acceptable marginal fitness compared to conventional casting method (P<0.05).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.376-376
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• 2010

The single crystals of p-$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of $\Gamma_7$(A), $\Gamma_6$(B), and $\Gamma_7$(C) to the conduction band state of $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the $CdIn_2Te_4$ band gap energy was given by the equation of $E_g(T)=E_g(0)-(9.43{\times}10^{-3})T^2/(2676+T)$. $E_g$(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• 한국가시화정보학회:학술대회논문집
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• 2003.11a
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• pp.67-70
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• 2003

Hard disk drives (HDD) in computer are used extensively as data storage capacity. The trend in the computer industry to produce smaller disk drives rotating at higher speeds requires an improved understanding of fluid motion in the space between disks. Laser sheet and digital camera was used for 2-dimensional visualization of the unsteady flow between the center pair of two co-rotating disks in air with a cylindrical enclosure (or shroud). Geometric parameters are gap height (H) between disks, and gap distance (G) between disk tip and shroud. The lobe-structured boundary between inner region and outer region was detected by inserted particles, and the number of dominant vortices was determined clearly It is found from flow visualization that the number of vortex cells can be correlated with Reynolds number based on H which is defined as $Re_H={\Omega}RH/v$ ranging from $3.18\times10^3\;to\;1.43\times10^4$, and decreases as the disk speed increases. The lobe pattern by vortex cells is changed to a circular pattern for the wide gap than narrow one.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1661-1665
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• 2004

Hard disk drives (HDD) in computer are used extensively as data storage capacity. The trend in the computer industry to produce smaller disk drives rotating at higher speeds requires an improved understanding of fluid motion in the space between disks. Laser sheet and digital camera was used for 2-dimensional visualization of the unsteady flow between co-rotating disks in air with a cylindrical enclosure (or shroud). Geometric parameters are gap height (H) between disks, and gap distance (G) between disk tip and shroud. The lobe-structured boundary between inner region and outer region was detected by inserted particles, and the number of dominant vortices was determined clearly It is found from flow visualization that the number of vortex cells can be correlated with Reynolds number based on H which is defined as $Re_H={\Omega}RH/v$ ranging from $7.96{\times}10^2$ to $1.43{\times}10^4$, and decreases as the disk speed increases. The lobe pattern by vortex cells is changed to a circular pattern for the wide gap than narrow one.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.98-102
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• 2006

In this paper, we have designed and fabricated the high power amplifier employing PBG(Photonic Band-Gap Structure) to improve the linearity of the amplifier in the millimeter wave band. The fabricated amplifier using MMIC(TGA1073G) has operated about 24 GHz band and the PBG has resulted in 35 dB suppression about 49 GHz where the second harmonic occurs due to the amplifier. As a result, the output power has been 24.43 dBm and 13.2 dBc of the IMD has been improved. Also, the PAE is obtained to 14.96 % of the amplifier employing the PBG structure in Ka band.