• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.269-269
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• 2013

Redox cycling in between the two working electrodes in an electrochemical cell can lead a great signal enhancement. In this work, we report on a systematic examination of current amplification along with the decrease in the gap distance of a nanogap device which was fabricated by the combination of photo and chemical lithography [1]. The gap distance was controlled by the chemical lithographic process of surfacecatalyzed growth of metallic layer on pre-defined electrodes with wider initial gap. Enhancement of the redox current of ferri/ferrocyanide was observed upon gap distance reduction and the current is amplified about a thousand times in this redox system when the gap distance was decreased from 200 nm to 30 nm. The experimental results were discussed on the basis of the cyclic voltammetry (CV), atomic force microscopy (AFM) and scanning electron microscopy (SEM).

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.661-664
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• 2013

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2511-2513
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• 2007

• Carbon letters
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• v.6 no.2
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• pp.96-100
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• 2005

Taguchi methodology has been applied to get an idea about the parameters related to the chemical vapour deposition technique, which influences the formation of semiconducting carbon thin film of a desired band gap. L9 orthogonal array was used for this purpose. The analysis based on Taguchi methodology suggests that amongst the parameters selected, the temperature of pyrolysis significantly controls the magnitude of band gap (46%). Sintering time has a small influence (30%) on the band gap formation and other factors have almost no influence on the band gap formation. Moreover this analysis suggests that lower temperature of pyrolysis (${\leq}$ $750^{\circ}C$) and lower time of sintering (${\leq}$ 1 h) should be preferred to get carbon thin film with the desired band gap of 1.2eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.353.2-353.2
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• 2016

We studied electrochemical detection of Botulinum neurotoxin, Vaccinia virus, and Streptococcus Pneumoniae based on nanogap device. Target bio substances were employed as representative targets of protein, virus, and bacteria, respectively. Redox current generated by ferri/ferrocyanide as an electroactive probe was enhanced according to gap distance which was controlled by surface-catalyzed chemical deposition. We found that enhanced electrochemical signal leads more sensitive signal changes according to selective interaction of target and its complementary elements on the electrode or gap area. In case of Botulinum neurotoxin, the redox signal showed a time-dependent increase due to cleavage of the immobilized peptide which blocked redox cycling. Redox cycling was also hindered by Vaccinia virus and Streptococcus Pneumoniae which were selectively immobilized in the gap area.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.213-218
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• 2003

Band gap energies of SrTiO$_3$(STO) thin film on glass substrates were studied in terms of annealing temperature. The STO thin film was fabricated by our newly developed method based on the combination of the Self-Assembled Monolayer(SAM) technique and the Liquid Phase Deposition(LPD) method. The as-deposited film demonstrated a direct band gap energy of about 3.65 eV, which further increased to 3.73 eV and 3.78 eV by annealing at 40$0^{\circ}C$ and 50$0^{\circ}C$, respectively. The band gap energy saturated at about 3.70 eV for the crystallized film which was obtained by annealing at 600-$700^{\circ}C$. The relatively large band gap energies of our crystallized films were due to the presence of minor amorphous phase, grain boundaries and oxygen vacancies generated by annealing in air.

• Bulletin of the Korean Chemical Society
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• v.35 no.6
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• pp.1625-1632
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• 2014

A concise and efficient one-pot synthesis of chroman-2,4-dione-based HKA derivatives by three component reaction of HKAs, triethoxymethane and 4-hydroxycoumarin derivatives under solvent-free and catalyst-free conditions is described. This protocol has many advantages, in that the GAP (Group-Assistant-Purification) chemistry process is involved in this method. As a result, the experimenter can avoid cumbersome process steps such as traditional chromatography and recrystallization purifications. The desired products can be easily obtained by washing the crude products with 95% EtOH.

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2835-2838
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• 2013

• Bulletin of the Korean Chemical Society
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• v.35 no.5
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• pp.1523-1528
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• 2014

Silicon quantum dots (Si QDs) were synthesized by etching silicon nanopowder with aqueous hydrofluoric acid (HF) and nitric acid ($HNO_3$). Then, the hydride-terminated Si QDs (H-Si QDs) were functionalized by 1- octadecene (ODE). By only controlling the etching time, the maximum luminescence peak of octadecylterminated Si QDs (ODE-Si QDs) was tuned from 404 nm to 507 nm. The average optical gap was increased from 2.60 eV (ODE-Si QDs-5 min) for 5 min of etching to 3.20 eV (ODE-Si QDs-15 min) for 15 min of etching, and to 3.40 eV (ODE-Si QDs-30 min) for 30 min of etching. The electron affinities (EA), ionization potentials (IP), and quasi-particle gap (${\varepsilon}^{qp}_{gap}$) of the Si QDs were determined by cyclic voltammetry (CV). The quasi-particle gaps obtained from the CV were in good agreement with the average optical gap values from UV-vis absorption. In the case of the ODE-Si QDs-30 min sample, the difference between the quasi-particle gap and the average optical gap gives the electron-hole Coulombic interaction energy. The additional electronic levels of the ODE-Si QDs-30 min and ODE-Si QDs-15 min samples determined by the CV results are interpreted to have originated from the Si=O bond terminating Si QD.

• Bulletin of the Korean Chemical Society
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• v.30 no.7
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• pp.1611-1615
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• 2009

We designed new anthracene-based host material to increase color purity as well as device efficiency. The new blue host, 9,10-bis(2,4-dimethylphenyl)anthracene (BDA), has highly twisted structure and wide band gap due to ortho interaction between anthracene and introduced 2,4-dimethylphenyl substituents. BDA exhibited deep blue fluorescence in solution (${\lambda}_{max}$ = 410 nm) and in solid state (${\lambda}_{max}$ = 429 nm), respectively, with the wide optical band gap (E = 3.12 eV). Blue-light-emitting OLEDs using obtained host and 2% Flu-DPAN as emitter showed 8 cd/A of high efficiency as well as high color purity [CIE coordinates = (0.15, 015)].