• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.6
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• pp.116-126
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• 2008

This paper describes the Dual-band WLAN transmitter with 2.4[GHz], 5[GHz]. Dual-band WLAN transmitter was designed at 2.4[GHz] and 5[GHz]. The Dual-band WLAN transmitter has a amplifier which operate at 2.4[GHz] and 5[GHz] frequency and two VCO(Voltage Controlled Oscillator) or VCO has a wide scope of frequency. these problem cause a size and a power consumption, The Dual-band WLAN transmitter module was proposed to solve these. the transmitter was designed to get output signals of IEEE 802.11a's 5.8[GHz] band signal using frequency multiplication way or to act a amplifier about the 2.4[GHz] band signal of IEEE 802.11b/g, according to inputed frequency and bias voltage that a eve using single transmission block. The output spectrum get the improved specification of ACPR of 4[dB], 6[dB], 16[dB] at +11[MHz], +20[MHz], +30[MHz] offset of center frequency compared to no linearization, was satisfied to transmit spectrum mask of IEEE 802.11a wireless Lan.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.376-376
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• 2010

The single crystals of p-$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of $\Gamma_7$(A), $\Gamma_6$(B), and $\Gamma_7$(C) to the conduction band state of $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the $CdIn_2Te_4$ band gap energy was given by the equation of $E_g(T)=E_g(0)-(9.43{\times}10^{-3})T^2/(2676+T)$. $E_g$(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• International Journal of Advanced Culture Technology
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• v.7 no.4
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• pp.236-241
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• 2019

This paper will read about a multichannel frequency-modulated continuous wave (FMCW) radar sensor with switching transmit (TX) antennas is developed at W-band. To achieve a high angular resolution, a uniform linear array consisting of 5 switching-TX and 12 receive (RX) antennas is employed with the digital beamforming technique. The overall radar front-end module comprises a W-band transceiver and TX/RX antennas. A multichannel transceiver module consists of 5 up-conversion and 12 down-conversion channels, where one of the TX channels is sequentially switched ON. For developing transmitter, we developed an HPA (high power amplified) MMIC chip for W-band radar system and fabricated a transmitter module using this chip. In order to develop the W-band transmitter, we analyzed the important antenna transition structure from HPA MMIC line to W/G (Waveguide)antenna via M/S(microstrip) and fabricated it with 5 transmission channels. As a result, the output power of the transmitter was within 1 dB of the error range after analysis and measurement under normal temperature and environmental conditions.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.1
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• pp.142-149
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• 1999

In this paper, Aperture-coupled microstrip array antenna was designed and manufactured for satellite communication at Ka-Band. We analyzed a microstrip radiation element and designed power divider using $\lambda$g/4 transformer and T-junction power divider. A manufactured Aperture-coupled $2\times2$ microstrip array antenna has a resonant frequency of 20 GHz. The experimental results are as followings : resonant frequency of 19.62 GHz, VSWR 1.0692, return loss -29.61 dB, Bandwidth 1.76 GHz and -3 dB beamwidth $42^{\circ}$.

• Proceedings of the KSRS Conference
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• 2007.10a
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• pp.512-514
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• 2007

Even though official G/T for KOMPSAT-2 X-Band downlink acquisition was 32dB/K, KARI performed the data acquisition experiment using 2Am X-Band antenna to check if popular 2Am MODIS receiving antenna can receive KOMPSAT-2 MSC data within acceptable quality level. Through several acquisition tests, it was shown that G/T value of 24dB/K can provide the reliable data BER quality, 10-6 for the above the elevation angle of 10 degree. Some plots for Eb/No versus elevation angle are provided.

• Journal of applied mathematics & informatics
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• v.41 no.5
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• pp.1115-1128
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• 2023

In this paper, a novel hybrid method for multi-focus image fusion is proposed. The method combines the advantages of wavelet transform-based methods and focus-measure-based methods to achieve an improved fusion result. The input images are first decomposed into different frequency sub-bands using the discrete wavelet transform (DWT). The focus measure of each sub-band is then calculated using the Laplacian of Gaussian (LoG) operator, and the sub-band with the highest focus measure is selected as the focused sub-band. The focused sub-band is sharpened using an unsharp masking filter to preserve the details in the focused part of the image.Finally, the sharpened focused sub-bands from all input images are fused using the maximum intensity fusion method to preserve the important information from all focus images. The proposed method has been evaluated using standard multi focus image fusion datasets and has shown promising results compared to existing methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.347-351
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• 2003

A p-$CdIn_2Te_4$ single crystal has been grown by the Bridgman method without a seed crystal in a tree-stage vertical electric furnace. From photocurrent measurements, it was found that three peaks, A, B, and C, corresponded to an intrinsic transition due to the band-to-band transition from the valence band states ${\Gamma}_7(A),\;{\Gamma}_6(B),\;and\;{\Gamma}_7(C)$ to the conduction band state ${\Gamma}_6$, respectively. Also, the valence band splitting of the $CdIn_2Te_4$ crystal has been confirmed by photocurrent spectroscopy. The crystal field splitting and the spin orbit splitting were obtained to be 0.2360 and 0.1119 eV, respectively. Also, the temperature dependence of the band gap energy of the $CdIn_2Te_4$ crystal has been driven as the following equation of $E_g(T)\;=E_g(0)\;-\;(9.43\;{\times}\;10^{-3})T^2/(2676\;+\;T)$. In this equation, the Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band state A, B, and C, respectively. The band gap energy of the p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• Journal of IKEEE
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• v.27 no.1
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• pp.109-115
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• 2023

In this paper, we design and implement an Ultra-Wide Band (UWB, 3.1~10.6 GHz) antenna with 5G mobile communication (3.42~3.70 GHz) and Wireless Local Area Network (WLAN, 5.15~5.825 GHz) bands rejection characteristics. The proposed antenna consists of a planar radiation patch with two slots. The upper slot contributes to reject 5G mobile communication band and the lower slot contributes to reject WLAN band. The Voltage Standing Wave Ratio (VSWR) values of the proposed antenna show good performances in whole UWB band except for rejection bands based on VSWR 2.0. The proposed UWB antenna was simulated using High Frequency Struture Simulator (HFSS) by Ansoft. The simulated antenna showed dual rejection bands of 3.31~3.92 GHz and 5.04~5.90 GHz in UWB band, and measured antenna showed dual rejection bands of 3.35~3.97 GHz and 5.06~5.97 GHz. The largest VSWR values measured at each rejection band are 13.60 at 3.64 GHz and 10.25 at 5.52 GHz. The measured maximum gain is 5.31 dBi at 10.00 GHz. The lowest gains for the measured antenna at rejection bands are -8.73 dBi at 3.70 GHz and -4.36 dBi at 5.56 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.1 s.92
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• pp.66-77
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• 2005

This paper proposed a novel broadband PIFA(Planar Inverted-F Antenna) for IMT-2000/WLAN/DMB terminal. Two branch lines for meander line were utilized in order to improve the characteristics of PIFA which usually has a narrow band. The shorting strip between the ground plane and meander-type radiation elements were used in order to minimize the size of the antenna. The -10 dB return loss bandwidth of a realized antenna was $38.2{\%}$(1.84~2.71 GHz), which contains the broadband bandwidth with triple band. And the simulated and measured values of 1 g and 10 g averaged peak SAR on human head caused by the triple band PIFA mounted on folder-type handsets were analyzed and discussed. As a result, the measured 1 g and 10 g averaged peak SARs of PIFA were similar with the simulated values and were lower than the 1.6 W/kg and 2 W/kg of 1 g and 10 g averaged peak SAR limits.