• 한국분말재료학회지
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• 제22권5호
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• pp.331-336
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• 2015

We report on the succesful fabrication of ZnO nanorod (NR)-based robust piezoelectric nanogenerators (PNGs) by using Cu foil substrate. The ZnO NRs are successfully grown on the Cu foil substrate by using all solution based method, a two step hydrothermal synthesis. The ZnO NRs are grown along c-axis well with an average diameter of 75~80 nm and length of $1{\sim}1.5{\mu}m$. The ZnO NRs showed abnormal photoluminescence specrta which is attributed from surface plasmon resonance assistant enhancement at specific wavelength. The PNGs on the SUS substrates show typical piezoelectric output performance which showing a frequency dependent voltage enhancement and polarity dependent charging and discharging characteristics. The output voltage range is 0.79~2.28 V with variation of input strain frequency of 1.8~3.9 Hz. The PNG on Cu foil shows reliable output performance even at the operation over 200 times without showing degradation of output voltage. The current output from the PNG is $0.7{\mu}A/cm^2$ which is a typical out-put range from the ZnO NR-based PNGs. These performance enhancement is attributed from the high flexibility, high electrical conductivity and excellent heat dissipation properties of the Cu foil as a substrate.

• Smart Structures and Systems
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• 제18권2호
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• pp.335-354
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• 2016

This contribution presents an extended one-dimensional theory for piezoelectric beam-type structures with non-ideal electrodes. For these types of electrodes the equipotential area condition is not satisfied. The main motivation of our research is originated from passive vibration control: when an elastic structure is covered by several piezoelectric patches that are linked via resistances and inductances, vibrational energy is efficiently dissipated if the electric network is properly designed. Assuming infinitely small piezoelectric patches that are connected by an infinite number of electrical, in particular resistive and inductive elements, one obtains the Telegrapher's equation for the voltage across the piezoelectric transducer. Embedding this outcome into the framework of Bernoulli-Euler, the final equations are coupled to the wave equations for the longitudinal motion of a bar and to the partial differential equations for the lateral motion of the beam. We present results for the wave propagation of a longitudinal bar for several types of electrode properties. The frequency spectra are computed (phase angle, wave number, wave speed), which point out the effect of resistive and inductive electrodes on wave characteristics. Our results show that electrical damping due to the resistivity of the electrodes is different from internal (=strain velocity dependent) or external (=velocity dependent) mechanical damping. Finally, results are presented, when the structure is excited by a harmonic single force, yielding that resistive-inductive electrodes are suitable candidates for passive vibration control that might be of great interest for practical applications in the future.

• 대한전기학회논문지
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• 제39권6호
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• pp.616-623
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• 1990

This paper includes the analysis and formulation of a new model for studying scattering from wire meshes that is more efficient and simpler to apply than the previous methods. In the new method, the conjugate gradient method is employed to improve each previous iterative and the fast Fourier transform (FFT) technique is utilized. A numerical computation of mesh scattering algorithm has been carried out in the Spectral Domain. A study on the electromagnetic properties such as reflection coefficients, induced currents and aperture fields has been presented and compared with data calculated by other methods to support the validity of the algorithm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1572-1573
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• 2006

This paper presents electrical properties of Zinc Oxide(ZnO) surge arrester blocks under the power frequency AC voltages and various temperatures. The leakage current, $I_{R}-V$ curios and power dissipation for the fine and aged ZnO surge arrester blocks were measured as a function of the temperatures and applied voltages. When the temperature is increased from $50\;[^{\circ}C]$ to $150\;[^{\circ}C]$, the total leakage current significantly increased at the sane applied voltage level. Also, the resistive leakage currents and power dissipation were increased with increasing temperature. The leakage current and power dissipation of the aged ZnO arrester blocks were higher than the fine ZnO arrester blocks.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.79-79
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• 2008

We report the growth of $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin films and their substrate-dependent electrical characteristics. BST thin films were deposited on alumina(non-single crystal), $Al_2O_3$(100) substrates by Nd:YAG Pulsed Laser Deposition(PLD) with a 355nm wavelength at substrate temperature of $700^{\circ}C$ and post-deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for 1hours. BST materials had been chosen due to high dielectric permittivity and tunability for high frequency applications, To analyze the oxygen partial pressure effects, deposited films at 1, 10, 50, 100, 150, 200, 300 mTorr. The effects of oxygen pressure on structural properties of the deposited films have been investigated by X-ray diffraction(XRD) and atomic force microscope(AFM), respectively. Then we manufactured a inter-digital capacitor(IDC) patterns twenty fingers and $10{\mu}m$ gap, $700{\mu}m$ length and electrical properties were characterized. The results provide a basis for understanding the growth mechanisms and basic structural and electrical properties of BST thin films as required for tunable microwave devices applications such as varactors and tunable filters.

• 대한금속재료학회지
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• 제47권7호
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• pp.447-453
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• 2009

Isotropic conductive adhesives (ICAs) have been used or considered as an interconnect material for radio frequency identification (RFID) inlays or other flip chip assemblies due to the advantages of having a low temperature and high-speed bonding. In this work, the curing properties of commercial ICAs for the RFID tag application and the signal transmission in conductive lines that contained the ICA joints were evaluated as a function of the degree of cure at 900 MHz frequency range. The ICAs showed adequate signal transmission only after the curing process passed over the critical time. It was also found that the insertion loss of signal was more dependent on the contact states of Ag fillers in the bondline in preference to the electrical resistance of the ICA itself.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.466-466
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• 2013

Quantum-dot materials have introduced novel applications in organic light-emitting diodes and solar cells. The size controllability and structure modifications have continuously been upgrading the applicability to optoelectronic and flat-panel displays. In particular, quantum-dot organic light-emitting diodes (QLEDs) are a device driven through the electrical field applied to the electrical diodes. The QLEDs are affected by the constituent materials and the corresponding device structures. Conventionally, the electrical properties are characterized only in terms of dc-based current-voltage characteristics. The dynamic change in light-emitting diodes should be characterized in emitted and non-emitted states. Therefore, the frequency-dependent impedance can offer different information on the electrical performance in QLED. The current work reports an auxiliary information on the electrical and optical features originating from quantum-dot organic light-emitting diodes. The empirical characterizations are discussed towards an experimental tool in optimizing the light-emitting diodes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.346-349
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• 2002

Ferroelectric $Bi_{4-x}Nd_{x}Ti_{3}O_{12}(BNdT)$ thin films with the composition(x=0.75) were prepared on $Pt/Ti/SiO_{2}/Si(100)$ substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectirc constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was $56{\mu}C/cm^{2}$ at an applied voltage of 5V. In fatigue characteristics value remained costant up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.417-422
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• 2002

ZnO thin films were deposited on various substrates, such as Si-(111), SiO$_2$(5000 $\AA$ by thermal CVD)/Si-(100), and SiO$_2$(2000 $\AA$ by RF sputtering)/Si-(100). The (002)-orientation, surface morphology and roughness, and electrical resistivity of deposited films were measured and compared in terms of substrate. Surface acoustic wave(SAW) filters with a multilayered configuration of IDT/ZnO/SiO$_2$/Si were also fabricated and the IDT was obtained using a lift-off method. From the frequency-response characteristics of fabricated devices, the insertion loss and side-lobe rejection were estimated. The experimental results showed that the (002)-oriented growth nature of ZnO films, which played a crucial role of determining the characteristic of SAW device, was strong1y dependent upon the SiO$_2$buffer.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.599-603
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• 2003

Ferroelectric B $i_4$$_{-x}$N $d_{x}$ $Ti_3$ $O_{12}$ (BNdT) thin films with the composition(x=0.75) were prepared on Pt/Ti/ $SiO_2$(100) substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectric constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was 56$\mu$C/$\textrm{cm}^2$ at an applied voltage of 5V. In fatigue characteristics value remained constant up to 8$\times$10$^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.