• Journal of the Korean Institute of Telematics and Electronics
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• v.7 no.2
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• pp.33-42
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• 1970

This report is concerned with the fahrication with the falricationof silicon VVC diode by the double diffusion planer technique. At first, some design charts for VVC diode were derived by considering the voltage-capacitance relations, the critical field intensity at the metallurgical junction, and the cut-off frequency of the diode. These charts enables the fabrication engineers to design VVC diode easily without going into the sophisticated design theory. We started with a 2.5 ohm-cm n-type epitaxial silicon wafer. The phosphorous was diffused by POCl3 impurity source. Then boron diffusion followed make hyperabrupt p-n junction by BN source. The maximum to minimum capacitance ratio of the diode as a tuning diode for a TV tuner made in these experiments was 4:1. Measured electrical characteristics of the sample diodes showed in good agreement with the theoretical expectations. Slicing and polishing technique of the silicon wafer and diffusion technique of the impurity atoms, which were employed in our study, are also stated briefly in this report.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.223-229
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• 2003

In this thesis, the characteristics of an inverted-F antenna for the 2.4GHz and 5.8GHz zwirless local area network(WLAN) have been analysed in terms of the variation of design parameters. The antenna can be integrated on WLAN for notebook printed circuit board, and the characteristics in terms of the variation of the gap between feed line and shorting stub, gap between antenna's leg and ground plane, antenna leg's width, substrate's height and dielectric constant are analysed. By using these characterization plot of design parameter, the tuning techniques are proposed to design optimum antenna. The designed antenna has 170MHz, 500MHz frequency bandwidth ,VSWR is 1.6, 1.14 and 3.5dBi gain.

• Korean Journal of Optics and Photonics
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• v.10 no.4
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• pp.311-317
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• 1999

Unidirectional single-mode operation of a diode-pumped Nd:YAG laser with a planar semimonolithic ring cavity has been demostrated at 1064 nm. The semimonolithic cavity consists of a laser active medium placed in a magnetic field, a crystal quartz plate, and an output coupling mirror. They form an optical diode by acting each part as a Faraday rotator, a reciprocal polarization rotator and a partial polarizer, respectively. An eigenpolarization theory for the cavity configuration was presented and losses for the eigenmodes were calculated. A pump-limited single-mode output power of 155 mW and a slope efficiency of 17% were obtained when the laser was pumped by a 1.2 W, 809 nm diode-laser. A laser linewidth of less than 100 kHz is inferred from a beat note frequency spectrum between two identical laser systems and continous single-mode tuning range was more than 2 GHz.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.6 no.1
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• pp.37-47
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• 1995

In this paper, the slot coupled stacked microstrip antenna, which has wide bandwidth characteristics because of the double tuning effects from the interactions between two patches and feeding slot and improves distortions of radiation patterns due to spurious radiation from feeder, is analyzed. For the analy- sis Green function in the spectrum domain and Galerkin method is applied with an accurate analysis mode for slot coupled feeding structure using the scattering analysis method. The basis functions are 3 EB modes for patches and 5 PWS modes for feeder. The slot coupled stacked microstrip antennas are designed and fabricated with the center frequency of 11.5 Ghz and 12.0 GHz. The experimental results show the wide bandwidth characteristics of 1.9 ~ 2.2 GHz and agree well with the simulation results which have 15~20% bandwidth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.539-546
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• 2007

In this paper, a 3-D EM simulation methodology for on-chip spiral inductor analysis has provided and it is shown that the methodology can be adapted to the highly predictable design for CMOS VCO. LC-resonator type VCO have fabricated by using standard 0.25 um CMOS process. And the LC VCO layout case which has pattern ground shielded inductors and the other layout case which has no pattern grounded inductors were fabricated for the verification of their effects on the VCO's phase noise by reducing the Q-factor of inductors. Fabricated VCO has 3.094 GHz, -12.15 dBm output at the tuning voltage of 2.5 V, and from the simulation, Q-factor of the pattern grounded inductor has increased 8% at 3 GHz, and from the measurement results, the phase noise has reduced by 9 dB at the 3 MHz off-set frequency for the pattern grounded inductor layout case.

• Journal of Electrical Engineering and Technology
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• v.13 no.5
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• pp.2045-2049
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• 2018

An antenna arrays for a satellite navigation systems require more antenna elements to mitigate multiple jamming signals. In order to maintain the small array size while increasing the number of antenna elements, miniaturization technique is essential for antenna design. In this work, an electrically small circular microstrip patch antenna with a 3 dB hybrid coupler is designed as an element antenna, where the 3 dB hybrid coupler can yield the circularly polarized radiation characteristic. The miniaturized element antenna typically has too large capacitance in GPS L1 and GLONASS G1 bands, making it difficult to match with a single stand-alone non-Foster matching circuit (NFMC) in a stable state. Therefore, we propose a new matching technique, referred to as the hybrid matching method, which consists of a NFMC and a passive circuit. This passive tuning circuit manages reactance of antenna elements at an appropriate capacitance without a pole in the operating frequency range. The antenna array is fabricated, and the measured results show a reflection coefficient of less than -10 dB and an isolation of greater than 50 dB. In addition, peak gain of the proposed antenna is increased by 22.3 dB compared to the antenna without the hybrid matching network.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.3
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• pp.483-494
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• 2023

Recently, gas turbine generators are widely used for frequency control of power systems. Although the inlet temperature of a gas turbine is a key factor related to the performance and lifespan of the device, the inlet temperature is not measured directly for reasons such as the turbine structure and operating environment. In particular, the inlet temperature of the reheating gas turbine is very important for stable operation management, but field workers are experiencing a lot of difficulties because the manufacturer does not provide information on the calculation formula. Therefore, in this study, we propose a method for estimating the inlet temperature of a gas turbine using a machine learning-based linear regression analysis method based on a polytropic process equation. In addition, by proposing an inlet temperature calculation algorithm through the usefulness analysis and verification of the inlet temperature calculation model obtained through linear regression analysis, it is intended to help to improve the level of reheat gas turbine combustion tuning technology.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.5
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• pp.109-114
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• 2023

In this paper, a 2-channel Image-Reject receiver using a 65-nm CMOS process is presented for Ka-band compact radars. The designed receiver consists of Low-Noise Amplifier (LNA), IQ mixer, and Analog Baseband (ABB). ABB includes a complex filter in order to suppress unwanted images, and the variable gain amplifiers (VGAs) in RF block and ABB have gain tuning range from 4.5-56 dB for wide dynamic range. The gain of the receiver is controlled by on-chip SPI controllers. The receiver has noise figure of <15 dB, OP1dB of >4 dBm, image rejection ratio of >30 dB, and channel isolation of >45 dB at the voltage gain of 36 dB, in the Ka-band target frequency. The receiver consumes 420 mA at 1.2 V supply with die area of 4000×1600 ㎛.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.670-680
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• 2010

A low power single-chip CMOS receiver for 60 GHz mobile application are proposed in this paper. The single-chip receiver consists of a 4-stage current re-use LNA with under 4 dB NF, Cgs compensating resistive mixer with -9.4 dB conversion gain, Ka-band low phase noise VCO with -113 dBc/Hz phase noise at 1 MHz offset from 26.89 GHz, high-suppression frequency doubler with -0.45 dB conversion gain, and 2-stage current re-use drive amplifier. The size of the fabricated receiver using a standard 0.13 ${\mu}m$ CMOS technology is 2.67 mm$\times$0.75 mm including probing pads. An RF bandwidth is 6.2 GHz, from 55 to 61.2 GHz and an LO tuning range is 7.14 GHz, from 48.45 GHz to 55.59 GHz. The If bandwidth is 5.25 GHz(4.75~10 GHz) The conversion gain and input P1 dB are -9.5 dB and -12.5 dBm, respectively, at RF frequency of 59 GHz. The proposed single-chip receiver describes very good noise performances and linearity with very low DC power consumption of only 21.9 mW.

• Journal of the Korean Society for Nondestructive Testing
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• v.24 no.5
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• pp.508-517
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• 2004

We described a near-field scanning microwave microscope which uses a high-quality dielectric resonator with a tunable screw. The operating frequency is f=4.5 5GHz. The probe tip is mounted in a cylindrical resonant cavity coupled to a dielectric resonator We developed a hybrid tip combining a reduced length of the tapered part with a small apex. In order to understand the function of the probe, we fabricated three different tips using a conventional chemical etching technique and observed three different NSMM images for patterened Cr films on glass substrates. We measured the reflection coefficient of different metal thin film samples with the same thickness of 300m and compared with theoretical impedance respectly. By tuning the tunable screw coming through the top cover, we could improve sensitivity, signal-to-noise ratio, and spatial resolution to better than $1{\mu}m$. To demonstrate the ability of local microwave characterization, the surface resistance of metallic thin films has been mapped.