• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.70-71
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• 2000

세슘빔 공진기에서 세슘D$_2$ 전이선으로 광펌핑된 원자가 램지공진기에서 마이크로파의 주파수에 따른 초미세준위의 바닥상태간의 원자밀도 전이에 의한 형광 신호의 분포를 펌핑광의 세기에 따라 관측하였다. 펌핑광의 편광방향이 자기장에 나란한 $\pi$편광일 때 각 제만부준위의 마이크로파 전이 신호는 mF=0을 중심으로 $\pm$mF의 신호세기가 대칭적이었으나 펌핑광의 편광 방향이 자기장에 수직인 $\sigma$ $\pm$ 인 경우에는 비대칭적임을 확인하였다. 이것은 펌핑광의 주파수가 세슘빔 공진기에서의 세슘공진주파수에서 detuning이 있는 것에 의한 것으로 예상하였다. 이를 확인하기 위해 원자밀도행렬방정식으로 세슘빔공진기에서 마이크로파 전이신호를 계산하였다. 펌핑광의 세기와 편광방향, detuning에 따른 마이크로파 전이신호의 분포가 실험치와 잘 일치함을 알 수 있었다. 이 연구는 세슘빔 원자공진기에서 펌핑광의 주파수가 세슘공진주파수에 detuning된 정도를 관측할 수 있는 방법을 제시해 준다. (중략)

• Korean Journal of Optics and Photonics
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• v.8 no.3
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• pp.204-208
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• 1997

We analyze the intensity characteristics of the output beams of the ring laser, in which only one mode is generated in each direction, within the neoclassical model by using the Maxwell-Bloch equation. Considering the Nd:YAG crystal as a gain medium, we investigate the stability and the modulation of the output beam intensity as the pumping rate, the relaxation or the decay rate, and the frequency detuning vary, upon taking into account the effect of the beam in one beam in one direction onto the beam in the other direction. In particular, we examine the variation of the output beam intensity and the stability condition through a computer simulation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.5
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• pp.1076-1081
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• 2003

A new technique for generating millimeter-wave signals from a semiconductor laser is presented. The method multiples the signal frequency by using optical injection of short optical pulses at a sub-harmonic of the cavity round-trip frequency to drive the laser oscillating at its resonant frequency. A 32GHz signal is generated using a multisection semiconductor laser operated under continuous wave conditions, by injection optical pulses at a repetition rate equal to the fourth subhamonic(8GHz). The generated millimeter-wave signal exhibits a large submamonic suppression ratio(＞17 dB), large frequency detuning range (>300 MHz) low levels of phase-noise(-77.5 dBc/Hz), and large locking (>400 MHz)

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.6
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• pp.544-552
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• 2004

This paper deals with the hybrid active filter which can reduce the 11th/13th harmonics in AC network by using the single tuned filter. Since the proposed algorithm uses the detuning compensation capability of the filter, the output voltage of the proposed active power filter is changed according to the capacitance of capacitors, magnitude of harmonic current, resonance frequency and control mode. In this paper, the control characteristics and the design of hybrid active filter is investigated. A new hybrid active filter with new algorithm, which is an active filter with single tuned filter instead of double tuned filter, is proposed.

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.13-13
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• 1996

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.60-73
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• 1997

By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

• Current Optics and Photonics
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• v.1 no.6
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• pp.579-586
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• 2017

In this paper, we theoretically demonstrate that semiconductor optical amplifiers (SOAs) with strong wavelength dependence of gain and phase are capable of all-optical inverted and non-inverted wavelength conversion (WC) over a wide range, with the assistance of an optical filter. First, the gain dynamics and phase dynamics in a common quantum well (QW) SOA with the $In_{0.53}Ga_{0.47}As/In_{0.7322}Ga_{0.2678}As_{0.5810}P_{0.4190}$ material system are found to be strongly dependent on wavelength, which is mainly related to the wavelength dependence of the differential gain and the differential refractive-index change. Second, the wavelength dependence in an all-optical wavelength converter based on the QW SOA cascaded with a detuning band pass filter is studied. Simulations show that the quality of the converted signal has little dependence on the operation wavelength. Both inverted and non-inverted WC can be achieved, over a large wavelength range. Therefore, although the gain and phase change are strongly wavelength-dependent, the effects of this dependence can be erased by appropriate optical filtering.

• ETRI Journal
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• v.45 no.2
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• pp.193-202
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• 2023

We demonstrate the transmission of uncompressed 4K videos over the photonics-based terahertz (THz) wireless link using a directly modulated distributed feedback laser diode (DFB-LD). For optical heterodyne mixing and data modulation, a DFB-LD was employed and directly modulated with a 5.94-Gb/s non-return-to-zero signal, which is related to a 6G-serial digital interface standard to support ultra-high-definition video resolution. We derived the optimal frequency of the THz carrier by varying the wavelength difference between DFB-LD output and Tunable LD output in the THz signal transmitter to obtain the best transmission performances of the uncompressed 4K video signals. Furthermore, we exploited the negative laser-to-filter detuning for the adiabatic chirp management of the DFB-LD by the intentional discrepancy between the center wavelength of the optical band-pass filter and the output wavelength of the DFB-LD. With the help of the abovementioned methods, we successfully transmitted uncompressed 4K video signals over the 2.3-m wireless transmission distance without black frames induced by time synchronization error.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.3
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• pp.238-242
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• 1988

It is analyzed how performance of phase-locked loop driven by photodetector current in optical receiver will be changed under the condition that Gaussian thermal noise, pattern noise and shot noise are present and the loop has the nonzero detuning frequency. The phase error variance cahnges with the circuit configuration and the produced noise models. The analyzed results are applied to the previously implemented 90.194Mbps optic system whose loop filter is the improved active noninverting 1-st order lag-lead type.

• Journal of information and communication convergence engineering
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• v.8 no.4
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• pp.457-460
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• 2010

we have analyzed tens of Giga pulse signal generation using sideband injection locking scheme. The numerical model for semiconductor lasers under the strong optical injection is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. The numerical simulation results show that the unselected sidebands will affect the optical and RF-spectral characteristics even though the semiconductor laser is locked to the target sidebands.