• Wind and Structures
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• v.5 no.6
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• pp.479-492
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• 2002

A finite element aerodynamic model that can be used to analyse flutter instability of long span bridges in the time domain is presented. This approach adopts a simplified quasi-steady formulation of the wind forces neglecting the vortex shedding effects. The governing equations used are effective only for reduced velocities $V^*$ sufficiently great: this is generally acceptable for long-span suspension bridges and, then, the dependence of the wind forces expressions of the flutter derivatives can be neglected. The procedure describes the mechanical response in an accurate way, taking into account the non-linear geometry effects (large displacements and large strains) and considering also the compressed locked coil strands instability. The time-dependence of the inertia force due to fluid structure interaction is not considered. The numerical examples are performed on the three-dimensional finite element model of the Great Belt East Bridge (DK). A mode frequency analysis is carried out to validate the model and the results show good agreement with the experimental measurements of the full bridge aeroelastic model in the wind tunnel tests. Significant parameters affecting bridge response are introduced and accurately investigated.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.7
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• pp.901-907
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• 1995

The switching characteristics of As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film ; a characteristic relaxation time (.tau.$_{0}$ ), the spatial density of defect states (N), and the localized wavefunction (.alpha.$^{-1}$ ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.5-8
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• 2001

This paper describes the development of SiC MOSFET model for high temperature applications. The temperature dependence of the threshold voltage and mobility of SiC MOSFET is quite different from that of silicon MOSFET. We developed the empirical temperature model of threshold voltage and mobility of SiC MOSFET and implemented into HSPICE. Using this model the MOSFET Id-Vds characteristics as a function of temperature are simillated. Also the SiC CMOS operational amplifieris designed using this model and the temperature dependence of the frequency response, transfer characteristics and slew rate as a function of temperature are analyzed.

• Journal of Magnetics
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• v.20 no.3
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• pp.290-294
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• 2015

To investigate the effects of alternating magnetic field intensity and stimulation time on the proliferation of human breast cancer cells (BT-20), we cultured the cells under a magnetic field with a saw tooth waveform of 2 kHz. The field intensities varied from 3 to 7 mT, and the stimulation time varied from 24 to 72 hours. Cell proliferation decreased dramatically to 40% during magnetic stimulation for 72 hours at 5 mT. However, the cells were not affected by a strong magnetic field of 7 mT. The p-values obtained using statistical package for social science software were below 0.05 for 5-7 mT. This means that the results have statistical significance. However, it is difficult to explain our results based on the physiology of cell membranes, which have various ionic flows at ion channels.

• Bulletin of the Korean Chemical Society
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• v.30 no.5
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• pp.1143-1146
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• 2009

[$Mn_{12}O_{12}(azo-L)_{16}(H_2O)_4$] (1), a new Mn12 single molecule magnet containing a photochromic azobenzene ligand, has been successfully synthesized by substitution of acetate ligand of Mn12 with 6-[4-{4-hexyloxyphenyl( azo)}-phenoxy]hexanoic-1-acid. The reversible photoisomerization of the azobenzene group was confirmed by UV-visible absorption spectroscopy. The temperature and field dependence of dc susceptibility and the temperature and the frequency dependence of ac susceptibility were measured for the cis and the trans isomer of 1. The magnetization value of the cis isomer in dc measurement is higher than that of the trans isomer. The cis isomer of 1 has a slower relaxation because cis-trans photoisomerization of the azobenzene group in peripheral ligands induces changes in its structure and dipole moment.

• Macromolecular Research
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• v.11 no.5
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• pp.322-327
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• 2003

Two kinds of mutually cross-linkable copolymers were prepared to be used as humidity-sensing materials. The humidity-sensitive thin films consist of cross-linked polyelectrolytes of the following component: 4-vinylbenzyl dimethyl 2-(dimethylphosphino)ethyl phosphonium chloride (1)/ bis(2-methoxyethyl)itaconate (2)= 3/l, 2/l, 1/1 and 1/2 and 4-vinylbenzyl chloride (3)/ vinylbenzyl tributyl phosphonium chloride (4)= 3/l, 2/l, 1/1 and 1/2. The humidity sensor prepared from the reaction of 1/2= 2/l with 3/4= 2/l showed an average resistance of 723,36.2 and 2.42 ㏀ at 30, 60 and 90%RH, respectively. Temperature dependence, frequency dependence, and response time were measured and the reliability test such as water durability and long-term stability were also estimated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.586-591
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• 2004

We studied the dependence of hot-tarrier-induced degradation characteristics on nitrogen concentration in NO(Nitrided-Oxide) gate of nMOS, under ac and dc stresses. The $\Delta$V$_{t}$ and $\Delta$G$_{m}$ dependence of nitrogen concentration were observed, We observed that device degradation was suppressed significantly when the nitrogen concentration in the gate was increased. Compared to $N_2$O oxynitride, NO oxynitride gate devices show a smaller sensitivity to ac stress frequency. Results suggest that the improved at-hot carrier immunity of the device with NO gate may be due to the significantly suppressed interface state generation and neutral trap generation during stress.ess.

• Journal of the Korean Magnetic Resonance Society
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• v.17 no.2
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• pp.92-97
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• 2013

We study the electron spin resonance line-width (ESRLW) of $Fe^{3+}$ in crystalline $LiNbO_3$ ; the ESRLW is obtained using the projection operator method (POM) developed by Argyres and Sigel. The ESRLW is calculated to be axially symmetric about the c-axis and is analyzed by the spin Hamiltonian with an isotopic g factor at a frequency of 9.5 GHz. The ESRLW increases exponentially as the temperature increases, and the ESRLW is almost constant in the high-temperature region (T>8000 K). This kind of temperature dependence of the ESRLW indicates a motional narrowing of the spectrum when $Fe^{3+}$ ions substitute the $Nb^{5+}$ ions in an off-center position. It is clear from this feature that there are two different regions in the graph of the temperature dependence of the ESRLW.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.6
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• pp.366-373
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• 2020

This study explored the factors associated with dependence among smartphone-dependent adults in their 20s. The data was derived from the 2017 survey on smartphone over-dependence conducted by the Ministry of Science and ICT and the National Information Society Agency. The participants were 879 adults in their 20s. The data was analyzed by frequencies, percentages, means, standard deviations, independent t-tests, Pearson's correlation coefficients, and multiple regression analysis. The results revealed instant messengers as the most used application by participants. Participants in the high risk category of dependence also used SNS (Social Networking Services), music, and games more than those in the potential risk category. The more serious the dependence, the greater the frequency of smartphone use (β=.16, p=.000), and use of games (β=.10, p=.028), webtoons (β=.14, p=.004), SNS (β=.09, p=.047), and financial transactions (β=.17, p=.000). They did not recognize their smartphone dependence when it was relatively low. However, when this became serious, they then realized that they depended on the smartphone more than others. That means that it is not easy for adults to recognize their smartphone dependence on their own. However, recognition of the problem is the first step for adults to solve their problems. A program that evaluates their problematic smartphone use should be installed and used on all smartphones.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.46 no.3
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• pp.239-247
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• 2010

Species of fish such as striped beakperch, bluefin searobin and konoshiro gizzard shad are commercially very important due to their high demand in the Korean market. When estimating acoustically the abundance of stocks for these species, it is of crucial importance to know the target strength (TS) to the length dependence. In relation to these needs, the TS experiments were conducted on three different species in an acrylic salt water tank using two split-beam echo sounders of 70 and 120 kHz. The TS for these three species under the controlled condition was simultaneously measured with the swimming movement by a DVR system and analyzed as a function of fish length (L) and frequency (or wavelength $\lambda$). The equation of the form TS=a log (L)+b log ($\lambda$)+c was derived for their TS-length dependence. The best fit regression of TS on fork length for striped beakperch was estimated as TS=35.67 log (L, m) -15.67 log ($\lambda$, m) -46.69 ($r^2$=0.78). Furthermore, the best fit regression of TS on fork length for konoshiro gizzard shad was shown to be TS=25.85 log (L, m) -5.85 log ($\lambda$, m) -32.22 ($r^2$=0.51). The averaged TS for 12 bluefin searobins with a mean length of 24.36cm at 70 kHz was analyzed to be -41.55dB. In addition, the averaged tilt angle obtained simultaneously by a DVR system with TS measurements for 27 konoshiro gizzard shads swimming within an acrylic salt water tank was estimated at $-2.7^{\circ}$.