• Title/Summary/Keyword: Free silicon

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Effect of the Amount of Free Silicon on the Tribological Properties of Si-SiC (Free Silicon 함량에 따른 Si-SiC 복합재료의 마찰 마모 특성)

  • 김인섭;이병하
    • Journal of the Korean Ceramic Society
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    • v.31 no.5
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    • pp.520-528
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    • 1994
  • An investigation was carried out to understand the effect of the amount of free silicon on the tribological properties of Si-SiC. The specimens of dense Si-SiC composites with various amount of free silicon were fabricated in the temperature of 175$0^{\circ}C$ after molding under various pressure. Wear properties were measured by ball-on-plate wear tester under the constant weight of 4 Kgf at constant sliding speed of 500 mm/sec in water. As the result, the Rockwell hardness and fracture strength of Si-SiC composites remained nearly constant up to 16.62 vol% of free silicon in the Si-SiC microstructure. The Si-SiC composites containing the free silicon of 16.62 vol% was considered to be prominent in the tribological properties, which had the friction coefficient of 0.08 and the specific wear rate of 2.4$\times$10-8$\textrm{mm}^2$Kgf-1. The analysis of the wear surface indicated the complicated processes occuring on the surface such as fine polishing, abrasion, microfracture.

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Limitation and Solution of Free-form Silicone Mold (FSM) used in Free-form Concrete Panel (FCP) Manufacture (FCP(Free-form Concrete Panel) 제작에 사용되는 FSM(Free-form Silicone Mold)의 한계와 해결방안)

  • Jeong, Kyeong-Tae;Youn, Jong-Young;Yu, Chae-Yeon;Lee, Dong-Hoon3
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2023.11a
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    • pp.21-22
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    • 2023
  • In order to manufacture high-quality free-form concrete panel (FCP), it is necessary to analyze the limitations of free-form silicone mold (FSM) and conduct technology development research. Currently, the FSM used in FCP manufacture is classified into a side silicon mold(SSM) and a lower silicon mold(LSM). In this study, the limitations of each silicon mold were analyzed and solutions were proposed. In the case of side silicon mold, there is a limit to cannot supporting the side pressure of concrete. Therefore, a mold stacking method was proposed, and at the same time, a process of correcting the movement value of the rod was proposed. In the case of the lower silicon mold, there is a limit to completely implementing the design shape. Therefore, a real-time scanning method and a process of displaying FCP shape coordinates were proposed. The results of this study are expected to be used as basic data for manufacturing high-quality FCP.

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The Influence of the Wafer Resistivity for Dopant-Free Silicon Heterojunction Solar Cell (실리콘 웨이퍼 비저항에 따른 Dopant-Free Silicon Heterojunction 태양전지 특성 연구)

  • Kim, Sung Hae;Lee, Jung-Ho
    • Journal of the Korean institute of surface engineering
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    • v.51 no.3
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    • pp.185-190
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    • 2018
  • Dopant-free silicon heterojunction solar cells using Transition Metal Oxide(TMO) such as Molybdenum Oxide($MoO_X$) and Vanadium Oxide($V_2O_X$) have been focused on to increase the work function of TMO in order to maximize the work function difference between TMO and n-Si for a high-efficiency solar cell. One another way to increase the work function difference is to control the silicon wafer resistivity. In this paper, dopant-free silicon heterojunction solar cells were fabricated using the wafer with the various resistivity and analyzed to understand the effect of n-Si work function. As a result, it is shown that the high passivation and junction quality when $V_2O_X$ deposited on the wafer with low work function compared to the high work function wafer, inducing the increase of higher collection probability, especially at long wavelength region. the solar cell efficiency of 15.28% was measured in low work function wafer, which is 34% higher value than the high work function solar cells.

Fabrication and Characterization of Optically Encoded Porous Silicon Smart Particles

  • Sohn, Honglae
    • Journal of Integrative Natural Science
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    • v.7 no.4
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    • pp.221-226
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    • 2014
  • Optically encoded porous silicon smart particles were successfully fabricated from the free-standing porous silicon thin films using ultrasono-method. DBR PSi was prepared by an electrochemical etch of heavily doped $p^{{+}{+}}$-type silicon wafer. DBR PSi was prepared by using a periodic pseudo-square wave current. The surface-modified DBR PSi was prepared by either thermal oxidation or thermal hydrosilylation. Free-standing DBR PSi films were generated by lift-off from the silicon wafer substrate using an electropolishing current. Free-standing DBR PSi films were ultrasonicated to create DBR-structured porous smart particles. Optical characteristics of porous smart particles were measured by FT-IR spectroscopy. The surface morphology of porous smart particles was determined by FE-SEM.

Fabrication and Characterization of Free-Standing DBR Porous Silicon Film

  • Um, Sungyong;Sohn, Honglae
    • Journal of Integrative Natural Science
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    • v.7 no.1
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    • pp.1-4
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    • 2014
  • Distributed Bragg reflector porous silicon of different characteristics were formed to determine their optical constants in the visible wavelength range using a periodic square wave current between low and high current densities. The surface and cross-sectional SEM images of distributed Bragg reflector porous silicon were obtained using a cold field emission scanning electron microscope. The surface image of distributed Bragg reflector porous silicon indicates that the distributions of pores are even. The cross-sectional image illustrates that the multilayer of distributed Bragg reflector porous silicon exhibits a depth of few microns and applying of square current density during the etching process results two distinct refractive indices in the contrast. Distributed Bragg reflector porous silicon exhibited a porosity depth profile that related directly to the current-time profile used in etch. Its free-standing film was obtained by applying an electro-polishing current.

Flip-Chip Package of Silicon Pressure Sensor Using Lead-Free Solder (무연솔더를 이용한 실리콘 압력센서의 플립칩 패키지)

  • Cho, Chan-Seob
    • Journal of the Korean Society of Industry Convergence
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    • v.12 no.4
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    • pp.215-219
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    • 2009
  • A packaging technology based on flip-chip bonding and Pb-free solder for silicon pressure sensors on printed circuit board (PCB) is presented. First, the bump formation process was conducted by Pb-free solder. Ag-Sn-Cu solder and the pressed-screen printing method were used to fabricate solder bumps. The fabricated solder bumps had $189-223{\mu}m$ width, $120-160{\mu}m$ thickness, and 5.4-6.9 standard deviation. Also, shear tests was conducted to measure the bump shear strength by a Dage 2400 PC shear tester; the average shear strength was 74 g at 0.125 mm/s of test speed and $5{\mu}m$ shear height. Then, silicon pressure sensor packaging was implemented using the Pb-free solder and bump formation process. The characteristics of the pressure sensor were analogous to the results obtained when the pressure sensor dice are assembled and packaged using the standard wire-bonding technique.

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A Study on the Mold Connecting Technology of the Lower Multi-point Press for Improving Accuracy of Free-form Concrete Panels (비정형 콘크리트 패널의 정확성 향상을 위한 하부 다점 프레스의 거푸집 연결기술에 관한 연구)

  • Yun, Ji-Yeong;Youn, Jong-Young;Lee, Donghoon
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2021.11a
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    • pp.6-7
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    • 2021
  • Although the development of free-form architectural technology continues, it consumes a lot of money and time due to the one-time formwork and the difficulty of maintaining quality due to manual work. To this end, in this study, a shape connection technique was proposed and verified to improve the limitations of implementing the curved surface of the existing lower multi-point press. In order to improve the accuracy of the shape, a curved surface was implemented using a silicon cap and a silicon plate. As a result of the error analysis of the shape, a small value of less than 3 mm was found. This study can implement more accurate curved surfaces than conventional technologies and produce high-quality free-form panels.

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Chemical Sensors Based on Distributed Bragg Reflector Porous Silicon Smart Particles

  • Sohn, Honglae
    • Journal of Integrative Natural Science
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    • v.8 no.1
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    • pp.67-74
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    • 2015
  • Sensing characteristics for porous smart particle based on DBR smart particles were reported. Optically encoded porous silicon smart particles were successfully fabricated from the free-standing porous silicon thin films using ultrasono-method. DBR PSi was prepared by an electrochemical etch of heavily doped $p^{++}$-type silicon wafer. DBR PSi was prepared by using a periodic pseudo-square wave current. The surface-modified DBR PSi was prepared by either thermal oxidation or thermal hydrosilylation. Free-standing DBR PSi films were generated by lift-off from the silicon wafer substrate using an electropolishing current. Free-standing DBR PSi films were ultrasonicated to create DBR-structured porous smart particles. Three different surface-modified DBR smart particles have been prepared and used for sensing volatile organic vapors. For different types of surface-modified DBR smart particles, the shift of reflectivity mainly depends on the vapor pressure of analyte even though the surfaces of DBR smart particles are different. However huge difference in the shift of reflectivity depending on the different types of surface-modified DBR smart particles was obtained when the vapor pressures are quite similar which demonstrate a possible sensing application to specify the volatile organic vapors.

1-D Photonic Crystals Based on Bragg Structure for Sensing and Drug Delivery Applications

  • Koh, Youngdae
    • Journal of Integrative Natural Science
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    • v.4 no.1
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    • pp.11-14
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    • 2011
  • Free-standing multilayer distributed Bragg reflectors (DBR) porous silicon dielectric mirrors, prepared by electrochemical etching of crystalline silicon using square wave currents are treated with polymethylmethacrylate (PMMA) to produce flexible, stable composite materials in which the porous silicon matrix is covered with caffeine-impregnated PMMA. Optically encoded free-standing DBR PSi dielectric mirrors retain the optical reflectivity. Optical characteristics of free-standing DBR PSi dielectric mirrors are stable and robust for 24 hrs in a pH 12 aqueous buffer solution. The appearance of caffeine and change of DBR peak were simultaneously measured by UV-vis spectrometer and Ocean optics 2000 spectrometer, respectively.

Effect of silicon on alloying behavior of hot-dip galvannealed steel sheets (합금화 용융아연 도금강판의 합금화 거동에 미치는 실리콘의 영향)

  • 이호종;김종상
    • Journal of the Korean institute of surface engineering
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    • v.32 no.2
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    • pp.134-143
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    • 1999
  • The effects of silicon on galvannealing behavior of interstitial-free (IF) steels were studied. The growth rate of the Fe-Zn alloy layer was retarded as silicon in the steel added. Titanium in steel strongly favors Fe-Zn reaction, in particular outburst structures, whereas silicon inhibit them. Cross-sectional and planar views of galvannealed coatings were investigated to characterize alloy phase development. A possible mechanism to explain the retardation effect of silicon is discussed in terms of concentration on surface and inhibition layer.

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