• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.2961-2966
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• 2010

Reduction of carbonyl compounds such as aldehydes, ketones, $\alpha,\beta$-unsaturated enals and enones, $\alpha$-diketones and acyloins was carried out readily with $NaBH_3CN$ in the presence of wet $SiO_2$ as a neutral media. The reactions were performed at solvent-free conditions in oil bath (70 - $80^{\circ}C$) or under microwave irradiation (240 W) to give the product alcohols in high to excellent yields. Regioselective 1,2-reduction of conjugated carbonyl compounds took place in a perfect selectivity without any side product formation.

• Journal of Korea Foundry Society
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• v.27 no.3
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• pp.120-125
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• 2007

The microstructure, mechanical properties and melting range of Ni-Cr-Mo based alloys were investigated to develop Be-free Ni-Cr-Mo base dental alloys for Porcelain-Fused-to-Metal Firing(PFM). All as-cast alloys showed dendritic structure. Rockwell hardness of 20Cr7Mo was increased with addition of Si and Ti. On the contrary, it was decreased with addition of Co. The duplex alloying elemental addition such as 3Co + xTi, 2Si + xCo and 2Si + xTi to 20Cr7Mo resulted in much increase of hardness. Rockwell hardness and compressive strength for 20Cr3CoSiTi or 17Cr6CoSiTi alloy that add Si-Ti had similar values compared to the commercial alloys. Melting range for 20Cr3CoSiTi and 17Cr6CoSiTi alloy that add Si-Ti showed similar or lower than commercial alloys. In conclusion, 20Cr3CoSiTi and 17Cr6CoSiTi alloys can be applied for commercial use.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.489-497
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• 1995

The DDS((CH3)2SiCl2)＋H2 gas mixture, where C atoms exist in excess in the molecules, was used for chemical vapor deposition of SiC in order to prevent codeposition of free Si in MTS(Ch3SiCl3)＋H2 system. The deposition rate was more rapid than MTS, however differ from that of MTS, it decreased after shwoing a maximum at 140$0^{\circ}C$. The stoichiometry was highly improved by using the DDS as a precursor, although there exist a little pyrolytic C at 150$0^{\circ}C$. The preferred orientation was (220) in MTS, however, it changed to (111) in DDS. The microstructure of the layer deposited at lower temperature were dense, however it grew coarse with the increase in the temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.209-209
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• 2012

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An additional doping was not applied for heterojunction solar cells due to the spontaneous junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedding Si heterojunction solar cell provided significantly enhanced efficiency of 9.23% as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme of the effective TCO film-embedding heterojunction Si solar cells.

• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.46-54
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• 1993

$\beta$-SiC was chemically vapor deposited by pyrolysis of MTS＋H2 gas mixture. The experiments were conducted in the temperature range of 1100~150$0^{\circ}C$ with a r.f. induction furnace under atmospheric pressure. The IR, XRD, EDS and AES analysis revealed that the free Si was always codeposited with SiC below 140$0^{\circ}C$, regardless of the total flow rate and MTS concentration, whereas $\beta$-SiC single phase was deposited at 150$0^{\circ}C$. C3H8 or CH2Cl2 as an excess C sources, was supplied with MTS in order to obtain stoichiometric SiC at low temperature. With the addition of C3H8 or CH2Cl2, the deposition rate was increased and $\beta$-SiC single phase could be deposited even at temperature as low as 110$0^{\circ}C$. In the absence of C3H8 or CH2Cl2, the microhardness of the layer was quite low (

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.9
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• pp.621-627
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• 2016

In this study, we present a model that can be used to calculate the phonon-surface scattering rate directly from the experimental data on phonon mean free path (MFP) spectra of nanostructures. Using this model and the recently reported length-dependent thermal conductivity measurements on $Si_{0.9}Ge_{0.1}$ nanowires (NWs), we investigate the spectral reduced MFP distribution and the spectral phonon-surface scattering rate in the $Si_{0.9}Ge_{0.1}$ NWs. From the results, it is found that the phonon transport properties with the material and the phonon frequency dependency of the spectral phonon-surface scattering rate per unit length of the NW. The model presented in this study can be used for developing heat transfer analysis models of nanomaterials, and for determining the optimum design for tailoring the heat transfer characteristics of nanomaterials for future applications of phonon nanoengineering.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.277-277
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• 2013

The epitaxial graphene on the 4H- or 6H-SiC(0001) surface has been intensively studied due to the possibility of wafer-scale growt. However the existence of interface layer (zero layer graphene) and its influence on the upper graphene layer have been considered as one of the main obstarcles for the industrial application. Among various methods tried to overcome the strong interaction with the substrate through the interface layer, it has been proved that the hydrogen intercalation successfully passivate the Si dangling bond of the substrate and can produce the quasi-free standing epitaxial graphene (QFEG) layers on the siC(0001) surface. In this study, we report the results of the angle-resolved photoemission spectroscopy (ARPES) and Raman spectroscopy for the QFEG layers produced by ex-situ and in-situ hydrogen intercalation.From the ARPES measurement, we confirmed that the Dirac points of QFEG layers exactly coincide with the Fermi level. The band structure of QFEG layer are sustainable upon thermal heating up to 1100 K and robust against the deposition of several metals andmolecular deposition. We also investigated the strain of the QFEG layers by using Raman spectroscopy measurement. From the change of the 2D peak position of graphene Raman spectrum, we found out that unlike the strong compressive strain in the normal epitaxial graphene on the SiC(0001) surface, the strain of the QFEG layer are significantly released and almost similar to that of the mechanically exfoliated graphene on the silicon oxide substrate. These results indicated that various ideas proposed for the ideal free-standing graphene can be tested based on the QFEG graphene layers grown on the SiC(0001) surface.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.1-8
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• 2022

High-density packaging technologies, including Through-Si-Via (TSV) technologies, are considered important in many fields such as IoT (internet of things), 6G/5G (generation) communication, and high-performance computing (HPC). Achieving high integration in two dimensional packaging has confronted with physical limitations, and hence various studies have been performed for the three-dimensional (3D) packaging technologies. In this review, we described about the causes and effects of scallop formation in TSV, the scallop-free etching technique for creating smooth sidewalls, Cu pillar and Cu-SiO₂ hybrid bonding in TSV. These technologies are expected to have effects on the formation of high-quality TSVs and the development of 3D packaging technologies.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.1-5
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• 2011

Silicon carbide (SiC) has recently drawn an enormous industrial interest because of its useful mechanical properties such as thermal resistance, abrasion resistance and thermal conductivity at high temperature. RF Thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) has been utilized for synthesis of high purity SiC powder from cheap inorganic solution (Tetraethyl Orthosilicate, TEOS). It is found that the powders by thermal plasma consist of SiC with free carbon and amorphous silica ($SiO_2$) and, by thermal treatment and HF treatment, the impurities are driven off resulting high purity SiC nano-powder. The synthesized SiC powder lies below 30 nm and its properties such microstructure, phase composition, specific surface area and free carbon content have been characterized by X-ay diffraction (XRD), field emission scanning electron microscopy (FE-SEM), thermogravimetric (TG) and Brunauer-Emmett-Teller (BET).

• Journal of the Korean Ceramic Society
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• v.30 no.3
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• pp.181-188
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• 1993

The sintering and renitridation behaviors of ultrafine Si3N4 powder compacts, which were heavily oxidized and/or free-Si rich, were investigated with particular attentiion to microstructures. The specimens were heated without restoring to additives and pressure by controlling heating process attained a Xe image apparatus. The effect of particle size, free-Si contents, decomposition and renitridation, were investigated. When fired to 1$650^{\circ}C$ within 15 sec and then immediately held at 135$0^{\circ}C$ for 10min N2 atmosphere, significant densification took place in the limited region, in addition to decreasing oxygen contents to less than 0.3wt%. On the other hand, specimens decomposed due to overheating at the initial stage were rapidly renitridated at the relatively lower temperature of the holding stage. And, then, the activation energy for the renitridation was calculated to be 49kcal/mole.