• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.1
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• pp.6-11
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• 2009

Flow field in a roller conveyor system, induced from the movement of a cassette in which glasses for flat panel display are loaded, is numerically studied in this paper. Contamination on the glass surface by dust particles produced from mechanical friction between roller and cassette is predicted from the analysis results of flow fields. Results show that a large swirl flow is formed under the moving cassette with constant speed. This swirl flow is confined only under the cassette because two main streams from the backward and the fan filter unit on the top ceiling are sufficiently strong. Therefore, it can be said that possibility of the contamination by the particles originated from the friction is relatively low. It is also revealed that flow direction between glass plates is changed according to the speed of the cassette movement due to the shear force of glass plates.

• Proceedings of the Earthquake Engineering Society of Korea Conference
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• 2006.03a
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• pp.495-502
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• 2006

Seismic performance of semi-active fuzzy control algorithm to operate MR dampers for coupling adjacent building is investigated in this paper. In the proposed semi-active control technique, the fuzzy logic is used as a method to adjust input voltage to MR damper. In order to validate control performance of proposed technique, the seismic performance of the semi-active fuzzy control system is compared with that of passive control system where the input voltage to MR damper is set to display maximum damping force. The simulated results show that the semi-active fuzzy control technique effectively regulates the trade-off existing between seismic responses of two buildings subject to various earthquake excitations.

• Journal of Drive and Control
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• v.13 no.1
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• pp.49-53
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• 2016

The accurate calculation of bucket tip position has a large influence on showing the motion of an excavator on the display device of the excavator and controlling the excavator automatically. It is generally known that Inertial Measurement Unit (IMU) sensors are more accurate than accelerometer-based sensors while the boom, arm or bucket moves because additional forces beyond gravity add additional acceleration to the sensors. To prove the accuracy difference between the two types of sensors, a position recognition system using an accelerometer-based sensor and an IMU sensor is implemented on the excavator. The experimental results show that the system using the IMU sensor significantly reduces the position recognition error while bucket moves and additional force beyond gravity exists.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.155-159
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• 2005

High speed presses with high resolution in semiconductor lead frame manufacturing process are needed . But high speed operation accompanies mechanical vibration. therefore optimized kinematic structure to minimize vibration is required for a high speed press. And the growing competition in the industry asks a press with low cost, high speed, high resolution, and high pressing force, For this purpose a high speed press was modeled with 3D CAD solid modeling system and dynamic analysis were performed with CAE S/W for multibody dynamic analysis, Through these analyses a motor appropriate to a high speed press was selected and link structure for feeding system of the press was modified to reduce vibration. To perform this analysis working Model which is 2D kinematics and dynamic analysis software was used.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.11-15
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• 2007

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.29-33
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• 2010

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.10
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• pp.1976-1981
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• 2009

Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Coming glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, $Al_2O_3$: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X -ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature $100^{\circ}C$, Ar 50 sccm, $O_2$ 5 sccm and working pressure 5 motor showed the best properties of an electrical resistivity of $1.763{\times}10^{-4}\;[{\Omega}{\cdot}cm]$, a carrier concentration of $1.801{\times}10^{21}\;[cm^{-3}]$, and a carrier mobility of $19.66\;[cm^2/V{\cdot}S]$, which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.41-45
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• 2010

The ZnO thin films doped with Ga(GZO) and both Ga and Ge(GZO:Ge) were deposited on glass substrate by using RF sputtering system respectively. Structural, morphological and optical properties of the films deposited in the same condition were investigated. Structural properties of the films were investigated by Field Emission Scanning Electron Microscopy, FE-SEM images and X-ray diffraction, XRD analysis. These studies showed shape of films' surface and direction of film growth respectively. It's showed that all films were deposited by vertical orientation strongly. It can be confirmed that all dopants of targets were included in deposited films by results of EDX analysis. UV-Vis spectrometer results showed that all samples had highly transparent characteristics in visible region and have similar 3.28~3.31 eV band gap. It was found that existence of all dopants by EDX analysis. Morphology and roughness of surface of each film were clearly shown by Atomic Force Microscopy, AFM images. It was found in this research that film doped with Ge more dense and stable with hardly any difference in gap energy compared to ZnO films.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.27-32
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• 2022

There has always been a demand for orthodontic treatment. Orthodontic treatment allows tooth to be arranged by flexible arch wire fixed with tooth-attached brackets. Arch wire generate constant pressure to tooth brackets which moves the teeth to proper place. When the bracket transmits force, the braced wing of the bracket may deform. Deformed tie wing will lead to lost tension of elastic ligature. Then, lacking grip between tie wing and ligature might delay the tooth movement. Furthermore, tooth brackets used for orthodontic treatment make contact with in direct oral surface and this cause feeling of irritation that comes from height of tooth braces. This study suggests an optimal teethe bracket design to make up for inconvenience by shorten the height of bracket and complement the shape of bracket to reduce strain rate using finite element analysis. As a result, new optimal design of teethe bracket indicates lower strain rate of the bracket wing and takes good effects of shorten body height in terms of convenience.

• Journal of Institute of Control, Robotics and Systems
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• v.22 no.7
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• pp.557-561
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• 2016

Recently, in the manufacturing process of flat panel displays, mass production methods of inline system has been emerged. In particular the next generation OLED display manufacturing process, horizontal inline evaporation process has been tried. It is important for the success of OLED inline evaporation process to develop a magnetic levitation transport system capable of transferring a carrier equipped with a mother glass with high accuracy without any physical contact along the rail under vacuum condition. In the case of existing wheel-based transfer system, it is not suitable for OLED evaporation process requiring high cleanliness. On the other hand, the magnetic levitation transport system has an advantage that it does not generate any dust and it is possible to achieve high-precision control because there are not non-linear factors such as friction force. In this paper, we introduce the high-precision magnetic levitation transport system, which is currently under development, for OLED evaporation process.