전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제58권10호
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  • Pages.1976-1981
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  • 2009
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  • 1975-8359(pISSN)
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  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

평판디스플레이 응용을 위한 AZO 투명전도막의 전기적, 구조적 및 광학적 특성

Electrical, Structural, Optical Properties of the AZO Transparent Conducting Oxide Layer for Application to Flat Panel Display

  • 발행 : 2009.10.01
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초록

Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Coming glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, $Al_2O_3$: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X -ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature $100^{\circ}C$, Ar 50 sccm, $O_2$ 5 sccm and working pressure 5 motor showed the best properties of an electrical resistivity of $1.763{\times}10^{-4}\;[{\Omega}{\cdot}cm]$, a carrier concentration of $1.801{\times}10^{21}\;[cm^{-3}]$, and a carrier mobility of $19.66\;[cm^2/V{\cdot}S]$, which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

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참고문헌

  1. 김봉석, 김응권, 김용성, 'AI Doped ZnO 박막의 열처리에 따른 태양 전지용 투명전도막 특성', Journal of the Korean Ceramic Society, 9호, 제43권, pp. 532-536, 2006. 9 https://doi.org/10.4191/KCERS.2006.43.9.532
  2. Simon L. King., J,G.E. Gardeniers., 'Pulsed-laser deposited ZnO for device applications.', Applied surface science, vol. 96-98, pp. 811 -818, April 1996 https://doi.org/10.1016/0169-4332(96)80027-4
  3. Y.L. Liu., Y.C. Liu., 'Structural and optical properties of nanocrystalline ZnO films grown by cathodic electrodeposition on Si substrates', Applied physics B, vol. 322, no. 1, pp. 31-36(6), September 2000
  4. Xuhu.Yu., et al., 'Thickness dependence of properties of ZnO:Ga films deposited by rf magnetron sputtering', Appl.Surf.sci, vol. 245, pp. 310-315, May 2005 https://doi.org/10.1016/j.apsusc.2004.10.022
  5. R.J,Hong., et al., 'Studies on ZnQ:Al thin films deposited by in-line reactive mid-frequency magnetron sputtering', Appl.Surf.Sci, vol. 207, pp. 341-350, February 2003 https://doi.org/10.1016/S0169-4332(02)01525-8
  6. Zhai. Jiwei, Zhang Liangying., 'The dielectric properties and optical propagation loss of c-axis oriented ZnO thin films deposited by sol gel process,' Ceramics international, vol. 26, no. 8, pp. 883-885(3), September 2000 https://doi.org/10.1016/S0272-8842(00)00031-6
  7. 김영진, 권오준, '고주파 마그네트론 스퍼터링법으로 제조한 ZnO박막의 기판에 따른 효과', 센서학회지, 제5권, 제6호, PP. 66-73, 1996. 9
  8. T. Minami., H. Sato., K. Ohashi., T. Tomofuji and S. Takata., Conduction mechanism of highly conductive and transparent zinc oxide thin films prepared by magnetron sputtering', J. Crystal. Growth, vol. 117, pp 370-374, February 1992 https://doi.org/10.1016/0022-0248(92)90778-H
  9. Sang-Moo PARK., Tomoaki Ikegami., Kenji Ebihara., Paik-Kyun Shin., 'Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition', applied surface science, vol. 253, pp. 1522-1527, April 2006 https://doi.org/10.1016/j.apsusc.2006.02.046