• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.766-768
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• 2004

Rubbed films of a series of poly(p-phenylene 3,6-bis(4-(n-alkyloxy)phenyloxy)pyromellitimide)s (Cn-PMDA-PDA PIs), which are well-defined brush PIs composed of two aromatic-aliphatic bristles per repeat unit of a fully rodlike backbone, were investigated in detail using atomic force microscopy (AFM), optical retardation analysis and linearly polarized infrared (IR) spectroscopy in order to elucidate their surface morphology and molecular orientation. The liquid crystal (LC) alignment behavior and the anchoring energy of LC molecules on the rubbed films were also determined.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.386-392
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• 2020

In this study, the drift current characteristics of charged particles are analyzed for panels fabricated by varying the waveform biasing of the active particle loading method (APLM), which is a method driven by the electrophoretic principle of loading charged particles into a cell of a barrier rib-type electronic paper. We prepare 3 panels using APLM and 1 panel without APLM. The waveform of APLM uses square wave and ramp wave, and the step voltage wave is applied to the driving voltage. The drift currents measured from the square wave and ramp wave with the same period applied by APLM are 4.872 µC and 5.464 µC, respectively, and the ramp wave is shown to be relatively advantageous for loading charged particles that have a large q/m. The time-current curve results confirm that the abrupt movement of charged particles is occurring. When the step form wave signal with a short time of 1s is first applied, initial large movement of the charged particles is confirmed to occur in all samples, which is understood as the effect of applying the voltage necessary to remove the imaging force. The results of this study are expected to improve the loading of charged particles into the electronic paper cell, driven by the electrophoretic principle and optimization of the driving conditions.

• Advances in nano research
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• 제5권3호
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• pp.215-230
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• 2017

The development of hybrid systems comprising nanoparticles and polymers is an opening pathway for engineering nanocomposites exhibiting outstanding mechanical, optical, electrical, and magnetic properties. Among inorganic counterpart, iron oxide nanoparticles (IONP) exhibit high magnetization, controllable surface chemistry, spintronic properties, and biological compatibility. These characteristics enable them as a platform for biomedical applications and building blocks for bottom-up approaches, such as the layer-by-layer (LbL). In this regard, the present study is addressed to investigate IONP synthesised through co-precipitation route (average diameter around 7 nm), with either positive or negative surface charges, LbL assembled with sodium sulfonated polystyrene (PSS) or polyaniline (PANI). The surface and internal morphologies, and electrochemical properties of these nanocomposites were probed with atomic force microscopy, UV-vis and Raman spectroscopy, scanning electron microscopy, cross-sectional transmission electron microscopy, and electrochemical measurements. The nanocomposites display a globular morphology with IONP densely packed while surface dressed by polyelectrolytes. The investigation of the effect of thermal annealing (300 up to $600^{\circ}C$) on the oxidation process of IONP assembled with PSS was performed using Raman spectroscopy. Our findings showed that PSS protects IONP from oxidation/phase transformation to hematite up to $400^{\circ}C$. The electrochemical performance of nanocomposite comprising IONP and PANI were investigated in $0.5mol{\times}L^{-1}$ $Na_2SO_4$ electrolyte solution by cyclic voltammetry and chronopotentiometry. Our findings indicate this structure as promising candidate for potential application as electrodes for supercapacitors.

• 한국분말재료학회지
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• 제20권5호
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• pp.355-358
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• 2013

Micro trench structures are applied in gratings, security films, wave guides, and micro fluidics. These micro trench structures have commonly been fabricated by micro electro mechanical system (MEMS) process. However, if the micro trench structures are machined using a diamond tool on large area plate, the resulting process is the most effective manufacturing method for products with high quality surfaces and outstanding optical characteristics. A nonferrous metal has been used as a workpiece; recently, and hybrid materials, including polymer materials, have been applied to mold for display fields. Thus, the machining characteristics of polymer materials should be analyzed. In this study, machining characteristics were compared between nonferrous metals and polymer materials using single crystal diamond (SCD) tools; the use of such materials is increasing in machining applications. The experiment was conducted using a square type diamond tool and a shaper machine tool with cutting depths of 2, 4, 6 and 10 ${\mu}m$ and a cutting speed of 200 mm/s. The machined surfaces, chip, and cutting force were compared through the experiment.

• 한국위성정보통신학회논문지
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• 제10권3호
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• pp.89-93
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• 2015

본 연구에서는 이온빔 처리된 $HfO_2$ 박막을 이용한 액정디스플레이의 프리틸트각을 제어함으로써, 작은 구동전압에서도 안정적으로 구동할 수 있는 디스플레이 소자에 응용할 수 있는 특성을 연구하였다. $HfO_2$ 박막의 원자 수준의 증착을 통해서 높은 유전율의 박막을 제조할 수 있었으며, 이는 저전력 구동을 위해서 필수적인 요소라고 생각한다. 또한 이러한 $HfO_2$ 박막의 액정배향성을 확인하여 균일한 액정배향을 통해서 디스플레이 소자로의 응용가능성을 확인하였다. 특히 $HfO_2$ 박막에서의 액정배향성에 대해서 액정배향의 대표적인 특성인 프리틸트각의 제어를 실험을 통해서 확인하였다. 실험결과 이온빔처리를 한 $HfO_2$ 박막에서의 액정배향의 특성을 접촉각특성을 대표화하여 정량화 할 수 있었다. 본 연구의 결과 액정의 배향성 확보 및 프리틸트각을 제어할 수 있는 고유전율 $HfO_2$ 박막의 제조가 가능한 것을 확인할 수 있었으며, 고유전율 특성에서 기인하는 저전력 구동의 가능성을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.125-128
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layer's thickness, morphology and interface with electrode. In this study, light-emitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1-1'-biphenyl]-4,4'-diamine).Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. And we used other buffer layer of PPy(Polypyrrole) with ITO/PPy/TPD/Alq$_3$/Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and at 225nm and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$ and at 350nm. We also studied EL spectrum in the cell structure of ITO/TPD/Alq$_3$/Al and ITO/PPy/TPD/Alq$_3$/Al and we observed the EL spectrum peak at 510nm from our cell

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.120-120
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• 2006

탄소나노튜브는 nm급의 크기에 높은 전기전도도, 열전도 효율, 감한 기계적 강도 등의 장점을 가지며, FED(Field Emission Display), 극미세 전자 스위칭 소자, SET(Single Electron Transistor), AFM(Atomic Force Microscope) tip등 여러 분야로의 응용을 연구하고 있다. 본 연구에서는 탄소나노튜브를 Si 웨이퍼 위에 Ni/Ti 금속층을 촉매층으로 사용하고, 암모니아($NH_3$)가스와 아세틸렌 ($C_2H_2$)가스를 각각 희석가스와 성장원으로 사용하여 합성하였다. 탄소나노튜브의 성장은 Hot filament 화학기상증측(HFPECVD) 방식을 사용하였으며, 이 방법은 다량의 합성, 높은 균일성, 좋은 정렬 특성등의 장점을 가진다. 성장 온도는 탄소나노튜브의 성장 특성을 변화시키는 중요한 요소이다. 성장 온도에 따라 수직적 성장, 성장 밀도등의 특성 변화를 관찰하였다. 성장된 탄소나노튜브층 성분 분석은 에너지 분산형 X-선 측정기(EDS)를 통해 관찰하였고, 끝단에 촉매층이 존재하는 30~50 nm 폭을 가진 다중벽 탄소나노튜브를 고배율 투과전자현미경(HRTEM) 분석을 통해 관찰하였다. 전계방사 주사전자현미경(FESEM) 분석을 동해 1~3${\mu}m$의 길이를 가진 탄소나노튜브가 높은 밀도로 성장된 것을 확인하였다.

• 한국재료학회지
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• 제21권1호
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• pp.28-33
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• 2011

This paper describes the fabrication of AlN thin films containing iron and iron nitride particles, and the magnetic and electrical properties of such films. Fe-N-Al alloy films were deposited in Ar and $N_2$ mixtures at ambient temperature using Fe/Al composite targets in a two-facing-target DC sputtering system. X-ray diffraction results showed that the Fe-N-Al films were amorphous, and after annealing for 5 h both AlN and bcc-Fe/bct-$FeN_x$ phases appeared. Structure changes in the $FeN_x$ phases were explained in terms of occupied nitrogen atoms. Electron diffraction and transmission electron microscopy observations revealed that iron and iron nitride particles were randomly dispersed in annealed AlN films. The grain size of magnetic particles ranged from 5 to 20 nm in diameter depending on annealing conditions. The saturation magnetization as a function of the annealing time for the $Fe_{55}N_{20}Al_{25}$ films when annealed at 573, 773 and 873 K. At these temperatures, the amount of iron/iron nitride particles increased with increasing annealing time. An increase in the saturation magnetization is explained qualitatively in terms of the amount of such magnetic particles in the film. The resistivity increased monotonously with decreasing Fe content, being consistent with randomly dispersed iron/iron nitride particles in the AlN film. The coercive force was evaluated to be larger than $6.4{\times}10^3Am^{-1}$ (80 Oe). This large value is ascribed to a residual stress restrained in the ferromagnetic particles, which is considered to be related to the present preparation process.

• 한국재료학회지
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• 제30권4호
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• pp.169-175
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• 2020

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N₂ sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10^-3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N₂ gas in the Ar:N₂ gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N₂ gas ratio and large amount of N₂ gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N₂=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO₂-Si_xN_y thin film is satisfactory at 97 %.

• 한국지반신소재학회논문집
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• 제10권2호
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• pp.45-53
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• 2011

최근 보강토 옹벽은 점차 콘크리트옹벽을 대체하는 안정화된 공법으로 자리 잡아가고 있다. 그러나, 보강재로서 신장성보강재(Extensible reinforcement)를 사용할 경우 보강토 옹벽의 전면벽에서 배부름(Bulging) 현상이 발생할 수 있다. 보강토옹벽의 배부름(Bulging)은 임의의 블록 높이에서 그 블록의 상단 및 하단 블록이 설계상의 상대적인 위치를 확보하지 못하는 현상이다. 이는 보강재가 인장력을 발휘하기 위해서는 어느 정도 변형이 필요하기 때문에 이에 대한 설계상의 검토가 필요하다. 따라서 본 연구에서는 알루미늄 봉을 이용하는 소형모형실험을 통해서 보강재의 신장특성이 보강토 옹벽거동에 어떤 영향을 미치는지 연구하였다. 보강재는 비신장성 보강재로서 창호지와 신장성 보강재로서 멤브레인을 이용하였다. 실험결과로부터 보강재의 강성은 보강토옹벽의 변위형태에 많은 영향을 미치는 인자임을 알 수 있었으며, 전반적으로 보강재의 강성이 증가함에 따라 최대수평변위의 발생지점이 벽체 상부로 이동하는 경향을 보이고 있다.