• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.992-995
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• 2003

A haptic device operated by the user's hand can receive information on position and orientation of the hand and display force and moment generated in the virtual environment to the hand. For realistic haptic display, the detailed information on collision between objects is necessary. In the past, the point-based graphic environment has been used in which the end effector of a haptic device was represented as a point and the interaction of this point with the virtual environment was investigated. In this paper, the shape-based graphic environment is proposed in which the interaction of the shape with the environment is considered to analyze collision or contact more accurately. To this end. the so-called Gilbert-Johnson-Keerthi (GJK) algorithm is adopted to compute collision points and collision instants between two shapes in the 3-D space. The 5- DOF haptic hand controller is used with the GJK algorithm to demonstrate a peg-in-hole operation in the virtual environment in conjunction with a haptic device. It is shown from various experiments that the shape-based representation with the GJK algorithm can provide more realistic haptic display for peg-in-hole operations.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1988-1990
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• 1996

In this work, we have grown or evaporated thermal oxide and E-beam oxide on the (100) oriented n-type silicon wafers, respectively and they were directly bonded with another silicon wafer after hydrophilization using solutions of three types of $HNO_3$, $H_{2}SO_{4}$ and $NH_{4}OH$. Changes of average surface roughness after hydrophilizations of the single crystalline silicon wafer, thermal oxide and E-beam evaporated silicon oxide were studied using atomic force microscope. Bonding interfaces of the bonded pairs were inspected using scanning electron microscope. Void and non-contact area of the bonded pairs were also inspected using infrared transmission microscope.

• 한국전기전자재료학회논문지
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• 제27권1호
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• pp.39-44
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• 2014

Silicon nitride thin film deposited with Plasma Enhanced Chemical Vapor Deposition was treated by a nitrogen plasma generated by Inductively Coupled Plasma at room temperature. The treatment was investigated by Fourier Transform Infrared Spectroscopy and Atomic Force Microscopy on the surface at various RF source powers at two RF bias powers. The amount of hydrogen was reduced and the surface roughness of the films was decreased remarkably after the plasma treatment. In order to understand the causes, we analyzed the plasma diagnostics by Optical Emission Spectroscopy and Double Langmuir Probe. Based on these analysis results, we show that the nitrogen plasma treatment was effective in the improving of the properties silicon nitride thin film for flexible display.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.181-184
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• 2003

In this paper, we investigated the position-dependent stress distribution of indium-tin-oxide (ITO) film on Polycarbonate (PC) substrate by external bending force. It was found that there are the maximum crack density at the center position and decreasing crack density as goes to the edge. In accordance with crack distribution, it was observed that the change of electrical resistivity of ITO islands is maximum at the center and decrease as goes to the edge. From the result that crack density is increasing at same island position as face-plate distance (L) decreases, it is evident that the more stress is imposed on same island position as L decreases.

• Current Applied Physics
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• 제18권12호
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• pp.1558-1563
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• 2018

We demonstrate improved surface pit and phase separation in thick InGaN grown on a GaN/Si (111) substrate, using plasma-assisted molecular beam epitaxy with an indium modulation technique. The formation of surface pit and compositional inhomogeneity in the InGaN epilayer are investigated using atomic force microscopy, scanning electron microscopy and temperature-dependent photoluminescence. Indium elemental mapping directly reveals that poor compositional homogeneity occurs near the pits. The indium-modulation epitaxy of InGaN minimizes the surface indium segregation, leading to the reduction in pit density and size. The phase separation in InGaN with a higher pit density is significantly suppressed, suggesting that the pit formation and the phase separation are correlated. We propose an indium migration model for the correlation between surface pit and phase separation in InGaN.

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.49-52
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• 2007

As the minimum feature size decrease, control of contamination by nanoparticles is getting more attention in semiconductor process. Cleaning technology which removes nanoparticles is essential to increase yield. A reference wafer on which particles with known size and number are deposited is needed to evaluate the cleaning process. We simulated particle trajectories in the chamber by using FLUENT. Charged monodisperse particles are generated using SMPS (Scanning Mobility Particle Sizer) and deposited on the wafer by electrostatic force. The Experimental results agreed with the simulation results well. We calculate the particles loss in pipe flow theoretically and compare with the experimental results.

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.33-38
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• 2007

Quartz glass panel was prepared by a colloidal silica through the heat-treatment only without any additives in wet-chemical method. This colloidal silica used in slurry process has the uniform distribution of particle size and lower cost. The results show that 6N as a degree of purity and the 86 percentage of violet transmittance in 1mm thickness. AFM(Atomic Force Microscopy) pattern shows that the surface roughness are less than lnm. Also, we investigated the characteristic of quartz panel according to the concentration and distribution of hydroxyl group, viscosity and thermal expansion coefficient.

• 반도체디스플레이기술학회지
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• 제12권1호
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• pp.53-59
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• 2013

Chip mounter which is used to pick chips from the pre-specified position and place them on the target location of PCB is an essential device in semiconductor and LCD industries. Quick and high precision positioning is the key technology needed to increase productivity of chip mounters. As increasing acceleration and deceleration of placing motion, structural vibration induced from inertial reactive force and flexibility of mounter structure becomes a serious problem degrading positioning accuracy. Motivated from these, this paper proposed a new control design algorithm which combines a mounter structure acceleration feedforward compensation and an extended sliding mode control for fine positioning and suppression of structural vibration, simultaneously. The feasibility of the proposed control design was verified along with some simulation results.

• Journal of Information Display
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• 제12권4호
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• pp.173-177
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• 2011

The alignment film abrasion caused by the rubbing process was quantitatively evaluated via atomic-force microscopy (AFM). First, a patterned alignment film structure, which was molded through the imprint method, was artificially formed. Then, the surface topography of the alignment film was evaluated via AFM after rubbing, and the degree of abrasion of the alignment film was estimated by subtracting the value after rubbing from the value before rubbing. It was recognized that the degree of abrasion increased with an increase in the rubbing strength. The relationship between the number of rubbing cycles and the degree of abrasion of the alignment film was also estimated.

• 한국전기전자재료학회논문지
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• 제16권12호
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• pp.1115-1120
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• 2003

In this paper, we investigated the position dependent stress distribution of indium-tin-oxide (ITO) film on Polycarbonate (PC) substrate by external bending force. It was found that there are the maximum crack density at the center position and decreasing crack density as goes to the edge, In accordance with crack distribution, it was observed that the change of electrical resistivity of ITO islands is maximum at the center and decrease as goes to the edge. From the result that crack density is increasing at same island position as face plate distance (L) decreases, it is evident that the more stress is imposed on same island position as L decreases.