• Title/Summary/Keyword: Folder Reduction Circuit

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Design of an 1.8V 6-bit 1GS/s 60mW CMOS A/D Converter Using Folding-Interpolation Technique (Folding-Interpolation 기법을 이용한 1.8V 6-bit 1GS/s 60mW 0.27$mm^2$ CMOS A/D 변환기의 설계)

  • Jung, Min-Ho;Moon, Jun-Ho;Hwang, Sang-Hoon;Song, Min-Kyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.11
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    • pp.74-81
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    • 2007
  • In this paper, CMOS analog-to-digital converter (ADC) with a 6-bit 1GSPS at 1.8V is described. The architecture of the proposed ADC is based on a folding type ADC using resistive interpolation technique for low power consumption. To reduce the power consumption, a folder reduction technique to decrease the number of folding blocks (NFB) by half of the conventional ones is proposed. further, a novel layout technique is introduced for compact area. With the clock speed of 1GSPS, the ADC achieves an effective resolution bandwidth (ERBW) of 500MHz, while consuming only 60mW of power. The measured INL and DNL were within $\pm$0.5 LSB, $\pm$0.7 LSB, respectively. The measured SNR was 34.1dB, when the Fin=100MHz at Fs=300MHz. The active chip occupies an area of 0.27$mm^2$ in 0.18um CMOS technology.

Design of an 1.8V 6-bit 100MS/s 5mW CMOS A/D Converter with Low Power Folding-Interpolation Techniques (저 전력 Folding-Interpolation기법을 적용한 1.8V 6-bit 100MS/s 5mW CMOS A/D 변환기의 설계)

  • Moon Jun-Ho;Hwang Sang-Hoon;Song Min-Kyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.8 s.350
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    • pp.19-26
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    • 2006
  • In this paper, CMOS analog-to-digital converter (ADC) with a 6-bit 100MSPS at 1.8V is described. The architecture of the proposed ADC is based on a folding type ADC using resistive interpolation technique for low power consumption. Further, the number of folding blocks (NFB) is decreased by half of them compared to the conventional ones. A moebius-band averaging technique is adopted at the proposed ADC to improve performance. With the clock speed of 100MSPS, the ADC achieves an effective resolution bandwidth (ERBW) of 50MHz, while consuming only 4.5mW of power. The measured result of figure-of-merit (FoM) is 0.93pJ/convstep. The INL and DNL are within ${\pm}0.5 LSB$, respectively. The active chip occupies an area of $0.28mm^2$ in 0.18um CMOS technology.