• Title/Summary/Keyword: Focused ion beam

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Development of Micro Plasma Electrode using Focused Ion Beam (FIB를 이용한 마이크로 플라즈마 전극 개발)

  • Choi Hon-Zong;Kang Eun-Goo;Lee Seok-Woo;Hong Won-Pyo
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.5 s.170
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    • pp.175-180
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    • 2005
  • The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. In this research, fabrication of micro plasma electrode was carried out using FIB. The one of problems of FIB-sputtering is the redeposition of material including Ga+ ion source during sputtering process. Therefore the effect of the redeposition was verified by EDX. And the micro plasma electrode of copper was fabricated by FIB.

Measurement of residual stress of steel filaments by using focused ion beam and digital image correlation (집속 이온빔과 디지털 화상 관련법를 이용한 고 탄소 미세 강선의 잔류 응력 측정)

  • Yang, Y.S.;Bae, J.G.;Kang, K.J.;Park, C.G.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2007.05a
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    • pp.241-245
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    • 2007
  • The residual stress in axial stress in the axial direction of the steel filaments has been measured by using a method based on the combination of the focused ion beam (FIB) and high resolution strain mapping program (VIC-2D). That is, the residual stress was calculated from the measured displacement field before and after the introduction of a slot along the steel filaments. The displacement was obtained by the digital correlation analysis of high-resolution scanning electron micrographs, while the slot was introduced by FIB milling with low energy beam. The present measurement revealed that the residual stress within 8% of the magnitude was persistent in the steel filaments fabricated.

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Measurement of the Residual Stress in the Steel Wires by using Focused Ion Beam and Digital Image Correlation Method (집속 이온빔과 디지털 화상 관련법을 이용한 고 탄소 미세 강선의 잔류 응력 측정)

  • Yang, Y.S.;Bae, J.G.;Park, C.G.
    • Transactions of Materials Processing
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    • v.16 no.4 s.94
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    • pp.323-328
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    • 2007
  • The residual stress in axial direction of the steel wires has been measured by using a method based on the combination of the focused ion beam(FIB) milling and digital image correlation(DIC) program. The residual stress is calculated from the measured displacement field before and after the introduction of a slot along the steel wires. The displacement is obtained by the digital correlation analysis of high-resolution scanning electron micrographs, while the slot is introduced by FIB milling with low energy beam. The experimental procedures are described and the feasibilities are demonstrated in steel wires fabricated with different conditions. It reveals that the tensile residual stress is formed in all steel wires and this is strongly influenced by the fabrication conditions.

EUVL Mask Defect Isolation and Repair using Focused Ion Beam (Focused Ion Beam을 이용한 EUVL Mask Defect Isolation 및 Repair)

  • 김석구;백운규;박재근
    • Journal of the Semiconductor & Display Technology
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    • v.3 no.2
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    • pp.5-9
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    • 2004
  • Microcircuit fabrication requires precise control of impurities in tiny regions of the silicon. These regions must be interconnected to create components and VLSI circuits. The patterns to define such regions are created by lithographic processes. In order to image features smaller than 70 nm, it is necessary to employ non-optical technology (or next generation lithography: NGL). One such NGL is extreme ultra-violet lithography (EUVL). EUVL transmits the pattern on the wafer surface after reflecting ultra-violet through mask pattern. If particles exist on the blank mask, it can't transmit the accurate pattern on the wafer and decrease the reflectivity. It is important to care the blank mask. We removed the particles on the wafer using focused ion beam (FIB). During removal, FIB beam caused damage the multi layer mask and it decreased the reflectivity. The relationship between particle removal and reflectivity is examined: i) transmission electron microscope (TEM) observation after particle removal, ii) reflectivity simulation. It is found that the image mode of FIB is more effective for particle removal than spot and bar mode.

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Ion Beam Induced Micro/Nano Fabrication: Modeling (이온빔을 이용한 마이크로/나노 가공: 모델링)

  • Kim, Heung-Bae;Hobler, Gerhard
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.8 s.197
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    • pp.108-115
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    • 2007
  • 3D nano-scale manufacturing is an important aspect of advanced manufacturing technology. A key element in ability to view, fabricate, and in some cases operate micro-devices is the availability of tightly focused particle beams, particularly of photons, electrons, and ions. The use of ions is the only way to fabricate directly micro-/ nano-scale structures. It has been utilized as a direct-write method for lithography, implantation, and milling of functional devices. The simulation of ion beam induced physical and chemical phenomena based on sound mathematical models associated with simulation methods is presented for 3D micro-/nanofabrication. The results obtained from experimental investigation and characteristics of ion beam induced direct fabrication will be discussed.

집속이온빔(Focused Ion Beam)을 이용한 3차원 나노가공

  • 박철우;이종항
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.05a
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    • pp.11-11
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    • 2004
  • 나노기술은 크게 2가지 접근방법을 가진다. 하나는 위에서 아래로(Top-Down)라는 관점으로 벌크물질로부터 이온빔 등을 이용해 이를 작게 잘라가는 방식이며, 다른 하나는 아래에서 위로(Bottom-Up) 방식으로 재질을 구성하는 분자를 재구성해 원하는 물성 및 특성을 가지도록 만드는 방법이다. 이 두 가지 접근 방법은 원하는 결과를 얻기 위해 상호 보완적으로 사용되기도 한다. Top-Down방식의 대표적인 기기로는 접속이온빔 장치(FIB, Focused Ion Beam)를 등 수 있으며, Bottom-Up방식의 대표적인 기기로는 SPM(Scanning Probe Microscope)을 들 수 있다.(중략)

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