• Title/Summary/Keyword: Focused ion beam

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Thermal Conductivity in Individual Single-Crystalline PbTe Nanowires (단결정 PbTe 단일 나노선의 열전도도)

  • Roh, Jong Wook;Jang, So Young;Kang, Joohoon;Lee, Seunghyun;Noh, Jin-Seo;Park, Jeunghee;Lee, Wooyoung
    • Korean Journal of Metals and Materials
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    • v.48 no.2
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    • pp.175-179
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    • 2010
  • We investigated the thermal conductivity of individual single-crystalline PbTe nanowires grown by chemical vapor transport method. Suspended MEMS was utilized to precisely measure the thermal conductivity of an individual nanowire. The thermal conductivity of a PbTe nanowire with diameter of 292 nm was measured to be $1.8W/m{\cdot}K$ at 300 K, which is about two thirds of that of bulk PbTe. This result indicates that the thermal conduction through a PbTe nanowire is effectively suppressed by the enhanced phonon boundary scattering. As the diameter of a PbTe nanowire decreases, the corresponding thermal conductivity linearly decreases.

Microstructure characterization technique of spacer garter spring coil X-750 material (스페이서 가터 스프링 코일 X-750 소재 정밀 조직 분석 방법)

  • Hyung-Ha Jin;I Seol Ryu;Gyeng-Geun Lee
    • Transactions of the Korean Society of Pressure Vessels and Piping
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    • v.17 no.2
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    • pp.109-118
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    • 2021
  • In the periodic surveillance material test for the spacer component of fuel channel assembly in CANDU, a microstructural characterization analysis is required in addition to the mechanical property evaluation test. In this study, detailed microstructure analysis and simple mechanical property evaluation of archive spacer parts were conducted to indirectly support the surveillance test and assist in the study of spacer material degradation. We investigated the microstructural characteristics of the spacer garter spring coil through comparative analysis with the plate material. The main microstructure characteristics of the garter spring coil X-750 are represented by the fine grain size distribution, the ordering phase distribution developed inside the matrix, the high dislocation density inside the grains, and the arrangement of coarse carbides. In addition, the yield strength of the garter spring coil X-750 was indirectly evaluated to be approximately 1 GPa. We also established an analytical method to elucidate the microstructural evolution of the radioactive spacer garter spring coil X-750 based on Canadian research experiences. Finally, we confirmed the measurement technique for helium bubble formation through TEM examination on the helium implanted X-750 material.

Electrochemical and surface investigations of copper corrosion in dilute oxychloride solution

  • Gha-Young Kim ;Junhyuk Jang;Jeong-Hyun Woo;Seok Yoon;Jin-Seop Kim
    • Nuclear Engineering and Technology
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    • v.55 no.8
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    • pp.2742-2746
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    • 2023
  • The corrosion behavior of copper immersed in dilute oxychloride solution (100 mM) was studied through surface investigation and in-situ monitoring of open-circuit potential. The copper corrosion was initiated with copper dissolution into a form of CuCl-2, resulting in mass decrease within the first 40 h of immersion. This was followed by a hydrolysis reaction initiated by the CuCl-2 at the copper surface, after which oxide products were formed and deposited on the surface, resulting in a mass increase. The formation of nucleation sites for copper oxide and its lateral extension during the corrosion process were examined using focused ion beam (FIB)-scanning electron microscopy (SEM). The presence of metastable compounds such as atacamite (CuCl2·3Cu(OH)2) on the corroded copper surface was revealed by X-ray photoelectron spectra (XPS) and transmission electron microscopy (TEM)-energy dispersive spectrometry (EDS) analysis.

A Study on the Micro-fracture Behavior of the MEMS Material at Elevated Temperature (고온용 MEMS 재료의 마이크로 파괴거동에 관한 연구)

  • Woo, Byung-Hoon;Bae, Chang-Won;Moon, Kyong-Man;Bae, Sung-Yeol;Higo, Yakichi;Kim, Yun-Hae
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.31 no.5
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    • pp.550-555
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    • 2007
  • The effective fracture toughness testing of materials intended for application in Micro Electro Mechanical Systems (MEMS) devices is required in order to improve understanding of how micro sized material used in device may be expected to perform upon the micro scale. ${\gamma}$-TiAl based materials are being considered for application in MEMS devices at elevated temperatures. Especially, in Alloy 4, both ${\alpha}_2$ and ${\gamma}$ lamellae were altered markedly in 3,000 h, $700^{\circ}C$ exposure. Parallel decomposition of coarse ${\alpha}_2$ into bunches of very fine (${\alpha}_2+{\gamma}$) lamellae. Parallel decomposition of coarse ${\alpha}_2$ into bunches of very fine (${\alpha}_2+{\gamma}$) lamellae. The materials were examined 2 types Alloy 4 on heat exposed specimen($700^{\circ}C$, 3,000 h) and no heat exposed one. Micro sized cantilever beams were prepared mechanical polishing on both side at $25{\sim}30{\mu}m$ and electro final stage polishing to observe lamellar orientation of same colony with EBSD (Electron Backscatter Diffraction Pattern). Through lamellar orientation as inter-lamellae or trans-lamellae, Cantilever beam was fabricated with Focused Ion Beam(FIB). The directional behavior of the lamellar structure was important property in single material, because of the effects of the different processing method and variations in properties according to lamellar orientation. In MEMS application, it is first necessary to have a reliable understanding of the manufacturing methods to be used to produce micro structure.

Measurement of Oblique ion-induced by electric fields secondary electron emission coefficient($\gamma$) and work function ${\Phi}w$ of the MgO protective layer in plane structure AC-PDPs (면방전 구조의 AC-PDP에서 전기장에 의해 기울어진 이온빔에 의한 MgO 보호막의 이차전자방출계수 ($\gamma$)와 일함수 (${\Phi}w$) 측정)

  • Lee, H.J.;Son, C.G.;Yoo, N.L.;Han, Y.G.;Jung, S.H.;Lee, S.B.;Lim, J.E.;Lee, J.H.;Song, K.B.;Oh, P.Y.;Jung, J.M.;Ko, B.D.;Moon, M.W.;Park, W.B.;Choi, E.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05a
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    • pp.135-138
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    • 2005
  • 현재 널리 상용되어 있는PDP는 3전극 변방전형이다. 3전극 면장전형 PDP는 주방전이 유전체 아래에 서로 평행하게 위치하고 있는 ITO투명전극 사이에서 발생한다. 따라서 방전시의 전기장은 MgO 보호막 위에서 아치형태로 형성되게 된다. 플라스마 방전 시 전자에 의해 이온화된 이온 입자들은 전기장에 의해 그 방전경로가 정해지게 된다. 물론 전기장은 표면에서 수직이지만 전기장에 의해 가속되어진 이온입자들은 MgO 보호막에 기울어져서 입사하게 된다. 따라서 플라스마 방전시의 이온들의 MgO 보호막으로의 입사각은 매우 다양하다. $\gamma$-FIB (Focused ion beam) 시스템은 이온입사에 의한 물질의 이차전자방출계수 측정에 효과적인 장비이다. 본 실험은 이러한 $\gamma$-FIB 시스템을 이용하여 다양한 각도로 입사하는 이온빔에 의한 MgO 보호막의 이차전자방출계수를 측정하였다. 또한 이온화 에너지가 다른 여러 종류의 불활성 기체를 사용하여 이온의 입사하는 각도에 따른 MgO 보호막의 일함수를 측정하였다. 이온빔의 입사각은 각각 $0^{\circ}$, $10^{\circ}$, $20^{\circ}$, $30^{\circ}$로 변화시키면서 이차전자방출계수 및 일함수를 측정하였다. 이러한 실험을 통해 입사각이 클수록 이차전자방출계수는 증가하고 일수는 감소하는 것을 확인 할 수 있었다.

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Beam Shaping by Independent Jaw Closure in Steveotactic Radiotherapy (정위방사선치료 시 독립턱 부분폐쇄를 이용하는 선량분포개선 방법)

  • Ahn Yong Chan;Cho Byung Chul;Choi Dong Rock;Kim Dae Yong;Huh Seung Jae;Oh Do Hoon;Bae Hoonsik;Yeo In Hwan;Ko Young Eun
    • Radiation Oncology Journal
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    • v.18 no.2
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    • pp.150-156
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    • 2000
  • Purpose : Stereotactic radiation therapy (SRT) can deliver highly focused radiation to a small and spherical target lesion with very high degree of mechanical accuracy. For non-spherical and large lesions, however, inclusion of the neighboring normal structures within the high dose radiation volume is inevitable in SRT This is to report the beam shaping using the partial closure of the independent jaw in SRT and the verification of dose calculation and the dose display using a home-made soft ware. Materials and Methods : Authors adopted the idea to partially close one or more independent collimator jaw(5) in addition to the circular collimator cones to shield the neighboring normal structures while keeping the target lesion within the radiation beam field at all angles along the arc trajectory. The output factors (OF's) and the tissue-maximum ratios (TMR's) were measured using the micro ion chamber in the water phantom dosimetry system, and were compared with the theoretical calculations. A film dosimetry procedure was peformed to obtain the depth dose profiles at 5 cm, and they were also compared with the theoretical calculations, where the radiation dose would depend on the actual area of irradiation. Authors incorporated this algorithm into the home-made SRT software for the isodose calculation and display, and was tried on an example case with single brain metastasis. The dose-volume histograms (DVH's) of the planning target volume (PTV) and the normal brain derived by the control plan were reciprocally compared with those derived by the plan using the same arc arrangement plus the independent collimator jaw closure. Results : When using 5.0 cm diameter collimator, the measurements of the OF's and the TMR's with one independent jaw set at 30 mm (unblocked), 15.5 mm, 8.6 mm, and 0 mm from th central beam axis showed good correlation to the theoretical calculation within 0.5% and 0.3% error range. The dose profiles at 5 cm depth obtained by the film dosimetry also showed very good correlation to the theoretical calculations. The isodose profiles obtained on the home-made software demonstrated a slightly more conformal dose distribution around the target lesion by using the independent jaw closure, where the DVH's of the PTV were almost equivalent on the two plans, while the DVH's for the normal brain showed that less volume of the normal brain receiving high radiation dose by using this modification than the control plan employing the circular collimator cone only. Conclusions : With the beam shaping modification using the independent jaw closure, authors have realized wider clinical application of SRT with more conformal dose planning. Authors believe that SRT, with beam shaping ideas and efforts, should no longer be limited to the small spherical lesions, but be more widely applied to rather irregularly shaped tumors in the intracranial and the head and neck regions.

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The Properties of Boron-doped Zinc Oxide Film Deposited according to Oxygen Flow Rate

  • Kim, Dong-Hae;Son, Chan-Hee;Yun, Myoung-Soo;Lee, Jin-Young;Jo, Tae-Hoon;Seo, Il-Won;Jo, I-Hyun;Roh, Jun-Hyung;Choi, Eun-Ha;Uhm, Han-Sup;Kwon, Gi-Chung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.358-358
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    • 2012
  • The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

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PDMS-based pixel-wall bonding technique for a flexible liquid crystal display (플렉서블 액정 디스플레이를 위한 PDMS 기반 pixel-wall bonding 기술)

  • Kim, Young-Hwan;Park, Hong-Gyu;Oh, Byeong-Yun;Kim, Byoung-Yong;Paek, Kyeong-Kap;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04a
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    • pp.42-42
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    • 2008
  • Considerable attention has been focused on the applications of flexible liquid crystal (LC)-based displays because of their many potential advantages, such as portability, durability, light weight, thin packaging, flexibility, and low power consumption. To develop flexible LCDs that are capable of delivering high-quality moving images, like conventional glass-substrate LCDs, the LC device structure must have a stable alignment layer of LC molecules, concurrently support uniform cell gaps, and tightly bind two flexible substrates under external tension. However, stable LC molecular alignment has not been achieved because of the layerless LC alignment, and consequently high-quality images cannot be guaranteed. To solve these critical problems, we have proposed a PDMS pixel-wall based bonding method via the IB irradiation was developed for fasten the two substrates together strongly and maintain uniform cell gaps. The effect of the IB irradiation on PDMS with PI surface was also evaluated by side structure configuration and a result of x-ray photoelectron spectroscopic analysis of PDMS interlayer as a function of binder with substrates. large number of PDMS pixel-walls are tightly fastened to the surface of each flexible substrate and could maintain a constant cell gap between the LC molecules without using any other epoxy or polymer. To enhance the electro-optical performance of the LC device, we applied an alignment method that creates pretilt angle on the PI surface via ion beam irradiation. Using this approach, our flexible LCDs have a contrast ratio of 132:1 and a response time of about 15 ms, resulting in highly reliable electro-optical performance in the bent state, comparable to that of glass-substrate LCDs.

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A Study of Properties of Sn-3Ag-0.5Cu Solder Based on Phosphorous Content of Electroless Ni-P Layer (Sn-3Ag-0.5Cu Solder에 대한 무전해 Ni-P층의 P함량에 따른 특성 연구)

  • Shin, An-Seob;Ok, Dae-Yool;Jeong, Gi-Ho;Kim, Min-Ju;Park, Chang-Sik;Kong, Jin-Ho;Heo, Cheol-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.6
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    • pp.481-486
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    • 2010
  • ENIG (electroless Ni immersion gold) is one of surface finishing which has been most widely used in fine pitch SMT (surface mount technology) and BGA (ball grid array) packaging process. The reliability for package bondability is mainly affected by interfacial reaction between solder and surface finishing. Since the behavior of IMC (intermetallic compound), or the interfacial reaction between Ni and solder, affects to some product reliabilities such as solderability and bondability, understanding behavior of IMC should be important issue. Thus, we studied the properties of ENIG with P contents (9 wt% and 13 wt%), where the P contents is one of main factors in formation of IMC layer. The effect of P content was discussed using the results obtained from FE-SEM(field-emission scanning electron microscope), EPMA(electron probe micro analyzer), EDS(energy dispersive spectroscopy) and Dual-FIB(focused ion beam). Especially, we observed needle type irregular IMC layer with decreasing Ni contents under high P contents (13 wt%). Also, we found how IMC layer affects to bondability with forming continuous Kirkendall voids and thick P-rich layer.

Application of Pulsed Chemical Vapor Deposited Tungsten Thin Film as a Nucleation Layer for Ultrahigh Aspect Ratio Tungsten-Plug Fill Process

  • Jang, Byeonghyeon;Kim, Soo-Hyun
    • Korean Journal of Materials Research
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    • v.26 no.9
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    • pp.486-492
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    • 2016
  • Tungsten (W) thin film was deposited at $400^{\circ}C$ using pulsed chemical vapor deposition (pulsed CVD); film was then evaluated as a nucleation layer for W-plug deposition at the contact, with an ultrahigh aspect ratio of about 14~15 (top opening diameter: 240~250 nm, bottom diameter: 98~100 nm) for dynamic random access memory. The deposition stage of pulsed CVD has four steps resulting in one deposition cycle: (1) Reaction of $WF_6$ with $SiH_4$. (2) Inert gas purge. (3) $SiH_4$ exposure without $WF_6$ supply. (4) Inert gas purge while conventional CVD consists of the continuous reaction of $WF_6$ and $SiH_4$. The pulsed CVD-W film showed better conformality at contacts compared to that of conventional CVD-W nucleation layer. It was found that resistivities of films deposited by pulsed CVD were closely related with the phases formed and with the microstructure, as characterized by the grain size. A lower contact resistance was obtained by using pulsed CVD-W film as a nucleation layer compared to that of the conventional CVD-W nucleation layer, even though the former has a higher resistivity (${\sim}100{\mu}{\Omega}-cm$) than that of the latter (${\sim}25{\mu}{\Omega}-cm$). The plan-view scanning electron microscopy images after focused ion beam milling showed that the lower contact resistance of the pulsed CVD-W based W-plug fill scheme was mainly due to its better plug filling capability.