• Smart Media Journal
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• v.12 no.1
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• pp.17-23
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• 2023

Design-For-Security (DFS) methodology is to protect integrated circuits from physical attacks, and that can be implemented by adding a security circuit to detect abnormal external access. Among the abnormal accesses called invasive attack, microprobing and FIB circuit editing are classified as the most powerful methods because they have direct access. Microprobing deliberately inject defects into the wire of circuit through probes, or reads and changes data. FIB circuit editing is methods of reconnecting or destroying circuits to neutralize security circuits or to access data. Previous DFS methodology have responded to the attacks by detecting arrival time asymmetry between the two signals or by comparing input/output data based on encrypted communication. This study conducted to reduce hardware overhead, and the proposed circuit detects the reflected signal asymmetry generated through probe or FIB circuit editing and detects the attacks through comparison. Since the proposed security circuit reduces the size and test cycle of the circuit compared to previous studies, the cost used for security can be reduced.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.1
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• pp.44-51
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• 2005

Material degradation is a multibillion-dollar problem which affects all the industries amongst others. The last decades have seen the development of newer and more effective techniques such as Focused-ion beam(FIB), Transmission electron microscopy(TEM), Secondary-ion mass spectroscopy(SIMS), auger electron spectroscopy(AES), X-ray Photoelectron spectroscopy(XPS) , Electrochemical impedance spectroscopy(EIS), Photo- stimulated luminescence spectroscopy(PSLS), etc. to study various forms of material degradation. These techniques are now used routinely to obtain information on the chemical state, depth profiling, composition, stress state, etc. to understand the degradation behavior. This paper describes the use of these techniques specifically applied to materials degradation and failure analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.545-545
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• 2012

집속이온빔장치(FIB: Focused Ion Beam System)에 사용하는 액체금속이온원(LMIS: Liquid Metal Ion Source)은 고 전류밀도, 고 휘도, 낮은 에너지퍼짐 등 많은 장점이 있다. 집속이온빔장치는 주로 표면 분석, 집적 회로의 수정, 마스크 교정(Repair) 및 잘못된 부분의 분석(Failure Analysis) 등에 사용되고 있는데 최근에는 고 분해능의 이온빔 리소그래피와 이온 주입의 기술 및 미세가공 기술 등의 분야에 집중되고 있으며 이를 위해서는 집속이온빔장치의 수렴성(Convergence)을 개선해 나가는 것이 중요하다. 집속이온빔장치의 수렴성은 이온빔의 에너지 퍼짐(Energy Spread)과 각 분포(Angular Distribution)에 많은 영향을 받으며 에너지퍼짐 특성은 색수차에 직접적인 영향을 준다. 수렴성을 개선하기 위해 기존의 에미터(Emitter), 저장소(Reservoir), 추출극(Extractor)으로 제작된 액체금속이온원에 서프레서(Suppressor)라는 새로운 전극을 사용하여 이 전극의 유 무에 따른 각 분포의 변화에 대해 연구하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.845-848
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• 2007

Analysis of point defects invisible by a microscope has been studied on the a-Si thin film transistor panel. The point defects which were named Invisible Point Defect (IPD) is characterized by no particles or distortion of patterns on a pixel structure and randomly distributed on panels. To investigate the IPD, measurements were carried out: gray level driving, transistor transfer characteristic, focused ion beam (FIB), and secondary ion mass spectrometry (SIMS). The results showed that a contamination layer had a bad influence on an active surface. The contamination layer consisted of oxygen and iron from a water supply line during cleaning process. After the process tuning, IPD has been stabilized.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.229-233
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• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper was carried out some experiments of the micro plasma electrode fabrications using FIB. The sputtering of FIB has one major problem that is redeposited by sputtered material including $Ga^+$ ion source. Therefore we have verified the effect of the reposition by EDX. And the optimal condition is suggested to machine the micro plasma electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.202-202
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• 2000

AC-PDP(Plasma Display Paner)는 기체 방전을 이용한 디스플레이로서 기체에 직접 노출되는 MgO 보호막의 2차전자 방출계수(${\gamma}$는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류, 결정 방향성과 표면오염상태 등에 영향을 받는다. 본 연구에서는 유리 기판위에 Al 전극을 증착, 에칭후 screen printing으로 유전체를 도포, 소성 한 21inch 규격의 test panel에 MgO 보호막을 E-Beam으로 5000$\AA$ 증착한 후 MgO 보호막을 대기에 노출되는 시간간격을 변수로 하여 대기 열처리 한 MgO보호막의 2차 전자방출계수를 ${\gamma}$-FIB(Focused Ion Beam) 장치를 이용하여 측정하였다. 그리고 대기 노출 간격은 1분, 5분, 20분으로 하여 2차 전자방출계수를 측정하였고, 2차전자방출계수 측정 시 가속전압은 50V에서 200V까지 변화를 주었으며, Ne+을 사용하여 1.2$\times$10-4Torr의 진공도를 유지하며 측정하였다. 또한 각각의 MgO막의 에너지 갭을 광학적 방법을 이용하여 구하였다.

• Transactions of Materials Processing
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• v.17 no.2
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• pp.91-96
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• 2008

The governing parameters affecting the fatigue properties have been investigated experimentally in the high carbon steel wires with 0.94 wt.%C. In order to find the crucial factors, the advanced analysis techniques such as optical 3-D profiler, focused ion beam(FIB) and transmission electron microscope(TEM) were used. The two-type steel wires with different drawing strain were fabricated. The fatigue properties were measured by hunter rotating beam tester, specially designed for thin-sized steel wires. It was found that the fatigue properties of the steel wires with high drawing strain was higher than that with other wires because of low residual stress and high adhesion condition of brass coating layer.

• Journal of the Korean Magnetics Society
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• v.17 no.6
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• pp.221-225
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• 2007

The effects of $Ga^+$ ion irradiation on the magnetic properties of the $Co_{73}Pt_{27}-TiO_2$ perpendicular magnetic recording media were investigated. As $Ga^+$ ion dose increased from $1\times10^{15}ions/cm^2\;to\;30\times10^{15}ions/cm^2$, the perpendicular magnetic anisotropy was degraded and no longer observed above $20\times10^{15}ions/cm^2$ dose. The deterioration of the perpendicular magnetic anisotropy and ferromagnetic properties can be attributed to the concentration profile change due to Ga+ ion implantation. The magnetic islands of $70\times70nm^2\;and\;100\times100nm^2$ size were successfully fabricated with $Ga^+$ ion irradiation.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.16-19
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• 2003

Ni thin films on the p-InP (In) substrates were grown at room temperature by using the ion beam-assisted deposition. In order to determine the work function of the Ni thin films, the $\gamma$values were measured as functions of the acceleration voltages by using Ne, Ar, $N_2$. and Xe ion sources. The dependences of the values on various gases and on the acceleration voltages of the focused ion beam were obtained to determine the work function of the Ni thin films. The value of the work function of the Ni thin films grown on the p-InP (100) substrate was 5.8 eV ~ 5.85 eV. These results provide important information on the electronic properties of Ni thin films grown on p-InP (100) substrates at room temperature.

• Journal of Energy Engineering
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• v.25 no.1
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• pp.192-197
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• 2016

We have surveyed on technical method of fault analysis of semiconductor device. Fault analysis of semiconductor should first be found the places of fault spots. For this process they are generally used the testers; EB(emission beam tester), EM(emission microscope), OBIRCH(optical beam induced resistance change method) and LVP(laser voltage probing) etc. Therefore we have described about physical interpretation and technical method in using scanning electron microscope, transmission electron microscope, focused ion beam tester and Nano prober.