• Nuclear Engineering and Technology
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• v.50 no.2
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• pp.259-267
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• 2018

Focused ion beam-scanning electron microscope and electron backscattered diffraction examinations were conducted in the center of a $73\;GWd/t_U\;UO_2$ fuel. They showed the formation of subdomains within the initial grains. The local crystal orientations in these domains were close to that of the original grain. Most of the fission gas bubbles were located on the boundaries. Their shapes were far from spherical and far from lenticular. No interlinked bubble network was found. These observations shed light on previous unexplained observations. They plead for a revision of the classical description of fission gas release mechanisms for the center of high burn-up $UO_2$. Yet, complementary detailed observations are needed to better understand the mechanisms involved.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.494-499
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• 2004

A ion source using inductively coupled plasma has been tested in order to test its feasibility as a high brightness ion source for focused ion beam. When operating the ion source with filter magentas in front of plasma electrode for a negative ion source, lower remittances are expected. Extracted beam remittances are measured with an Allison-type scanning device for various plasma parameters and extraction conditions. The normalized omittance has been measured to be around 0.2$\pi$mmmrad with beam currents of up to 0.55 ㎃. In particular, noting that multicusp magnets have a role in decreasing the remittance as well as increasing plasma discharge efficiency, transverse magnetic field has been confirmed to be a useful tool fur decreasing remittance via electron energy control.

• Applied Microscopy
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• v.45 no.4
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• pp.195-198
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• 2015

Gas-assisted etching (GAE) with focused ion beam (FIB) was applied to prepare plan-view specimens of Cu thin-layer on a silicon substrate for transmission electron microscopy (TEM). GAE using $XeF_2$ gas selectively etched the silicon substrate without volume loss of the Cu thin-layer. The plan-view specimen of the Cu thin film prepared by FIB milling with GAE was observed by scanning electron microscopy and $C_S$-corrected high-resolution TEM to estimate the size and microstructure of the TEM specimen. The GAE with FIB technique overcame various artifacts of conventional FIB milling technique such as bending, shrinking and non-uniform thickness of the TEM specimens. The Cu thin film was uniform in thickness and relatively larger in size despite of the thickness of <200 nm.

• Applied Microscopy
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• v.41 no.3
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• pp.147-154
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• 2011

Backscattered electrons (BSE) are generated at the impact of the primary electron beam on the specimen. BSE imaging provides the compositional contrast to resolve chemical features of sectioned block-face. A focused ion beam (FIB) column can be combined with a field emission scanning electron microscope (FESEM) to ensure a dual (or cross)-beam system (FIB-FESEM). Due to the milling of the specimen material by 10 to 100 nm with the gallium ion beam, FIB-FESEM allows the serial block-face (SBF) imaging of plastic-embedded specimens with high z-axis resolution. After contrast inversion, BSE images are similar to transmitted electron images by transmission electron microscopy. As another means of SBF imaging, a specialized ultramirotome has been incorporated into the specimen chamber of FESEM ($3View^{(R)}$). Internal structures of plastic-embedded specimens can be serially revealed and analyzed by $3View^{(R)}$ with a large field of view to facilitate three-dimensional reconstruction. These two SBF approaches by FESEM can be employed to unravel spatial association of (sub)cellular entities for a comprehensive understanding of complex biological systems.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.241-245
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• 2007

The residual stress in axial stress in the axial direction of the steel filaments has been measured by using a method based on the combination of the focused ion beam (FIB) and high resolution strain mapping program (VIC-2D). That is, the residual stress was calculated from the measured displacement field before and after the introduction of a slot along the steel filaments. The displacement was obtained by the digital correlation analysis of high-resolution scanning electron micrographs, while the slot was introduced by FIB milling with low energy beam. The present measurement revealed that the residual stress within 8% of the magnitude was persistent in the steel filaments fabricated.

• Transactions of Materials Processing
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• v.16 no.4 s.94
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• pp.323-328
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• 2007

The residual stress in axial direction of the steel wires has been measured by using a method based on the combination of the focused ion beam(FIB) milling and digital image correlation(DIC) program. The residual stress is calculated from the measured displacement field before and after the introduction of a slot along the steel wires. The displacement is obtained by the digital correlation analysis of high-resolution scanning electron micrographs, while the slot is introduced by FIB milling with low energy beam. The experimental procedures are described and the feasibilities are demonstrated in steel wires fabricated with different conditions. It reveals that the tensile residual stress is formed in all steel wires and this is strongly influenced by the fabrication conditions.

• Applied Microscopy
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• v.39 no.4
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• pp.349-354
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• 2009

In this paper we have constructed three dimensional images and examined structural failure on thin film transistor (TFT) liquid crystal display (LCD) by using dual-beam focused ion beam (FIB) and IMOD software. Specimen was sectioned with dual-beam focused ion beam. Series of two dimensional images were obtained by scanning electron microscopy. Three dimensional reconstruction was constructed from them by using IMOD software. The short defect between Gate layer and Data layer was found from the result of three dimensional reconstruction. That phenomena made the function of the gate lost and data signal supplied to the electrode though the Drain continuously. That signal made continuous line defect. The result of the three dimensional reconstruction, serial section, SEM imaging by using the FIB will be the foundation of the next advanced study.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.326-329
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• 2005

As a flexible method to fabricate sub-micrometer patterns, Focused Ion Beam (FIB) instrument and Self-Assembled Monolayer (SAM) resist are introduced in this work. FIB instrument is known to be a very precise processing machine that is able to fabricate micro-scale structures or patterns, and SAM is known as a good etch resistance resist material. If SAM is applied as a resist in FIB processing fur fabricating nano-scale patterns, there will be much benefit. For instance, low energy ion beam is only needed for machining SAM material selectively, since ultra thin SAM is very sensitive to $Ga^+$ ion beam irradiation. Also, minimized beam spot radius (sub-tens nanometer) can be applied to FIB processing. With the ultimate goal of optimizing nano-scale pattern fabrication process, interaction between SAM coated specimen and $Ga^+$ ion dose during FIB processing was observed. From the experimental results, adequate ion dose for machining SAM material was identified.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.679-685
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• 2014

For the measurements of surface shape milled using FIB (focused ion beam), the silicon bulk, $Si_3N_4/Si$, and Al/Si samples are used and observed the shapes milled from different sputtering rates, incident angles of $Ga^+$ ions bombardment, beam current, and target material. These conditions also can be influenced the sputtering rate, raster image, and milled shape. The fundamental ion-solid interactions of FIB milling are discussed and explained using TRIM programs (SRIM, TC, and T-dyn). The damaged layers caused by bombarding of $Ga^+$ ions were observed on the surface of target materials. The simulated results were shown a little bit deviation with the experimental data due to relatively small sputtering rate on the sample surface. The simulation results showed about 10.6% tolerance from the measured data at 200 pA. On the other hand, the improved analytical model of damaged layer was matched well with experimental XTEM (cross-sectional transmission electron microscopy) data.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.154-157
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• 2007

The austenite phase observed in low carbon HSLA steels is well known to be decomposed to various bainitic microstructures, such as granular bainite, acicular ferrite and bainitic ferrite during continuous cooling process. These bainitic microstructures have been usually identified by using either scanning electron microscope (SEM) or transmission electron microscope (TEM). However, SEM and TEM images do no exactly coincide, because of the quite different sample preparation method in SEM and TEM observations. These conventional analysis method is, thus, not suitable for characterization of the complex bainitic microstructure. In this study, focused ion beam (FIB) technique was applied to make site-specific TEM specimens and to identify the 3-dimensional grain morphologies of the bainitic microstructure. The morphological feature and grain boundary characteristics of each bainitic microstructure were exactly identified.