• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.412-412
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• 2008

ENIG(Electroless Nickel Immersion Gold)is a surface treatment method that is used most widely at fine pitch's SMT and BGA packaging process. ENIG has good diffusion barrier of Ni against solder and good wettability due to Au finish. But when the discoloration occurred on the Au finish of ENIG, some key characteristics related to the quality and reliability of PCB such as bondability, solderability and electrical flowing of packaging process could be deteriorated. In this paper, we have performed the water dip test ($88^{\circ}C$ purified water) which accelerates the galvanic corrosion of Ni diffused from the Ni-P layer. That is, the excessive oxidation of the Ni layer could result in non-wetting of the solder because the flux may not be able to remove excessive oxides. Though Au discoloration have been reported to be caused by Ni oxides in many literature, it is still open to verify and discuss The microstructures and chemical compositions have been investigated using FE-SEM, TEM, FIB, EDS and XPS. As a result, authors have found that the Au discoloration in ENIG type is severely caused by the oxidation of the Ni and the mechanism of Au discoloration can be confirmed through the experiment result of water dip test.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.87.2-87.2
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• 2012

고출력 반도체 레이저 다이오드는 발진 파장 및 광 출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 및 1470 nm 인 고출력 레이저 다이오드의 경우 재료가공, 펌핑용 광원 (DPSSL, 광섬유 레이저), 의료, 피부미용 (점 제거), 레이저 다이오드 디스플레이 등 가장 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. 일례로 재료가공의 경우, 레이저 용접, 레이저 인쇄, 하드디스크의 레이저 텍스쳐링 등 그 응용분야는 무수히 많으며, 최근에는 미래 성장동력 사업의 하나로 중요한 이슈가 되는 태양전지에서 에지 분리 (edge isolation), ID 마킹, 레이저 솔더링 등에서 필수불가결한 광원으로 각광받고 있다. 808 nm 대역 In(Ga)AlAs quantum dots laser diode (QDLD) 성장을 위하여 In(Ga)AlAs QD active 와 In(Ga)AlAs QD LD 성장으로 크게 분류하여 여러 가지 test 실험을 수행하였다. 우선 In(Ga)AlAs QD LD 성장에 앞서 high power LD에 적용 가능한 GaAs/AlGaAs quantum well의 성장 및 전기 측정을 수행하여 그 가능성을 보았다. In(Ga)AlAs QD active layer의 효과적인 실험 조건 조절을 위해 QD layer는 sequential mithod (ex. n x (InGaAlAs t sec + InAs t sec + As 10 sec)를 사용하였다. In(Ga)AlAs QD active layer는 성장 온도, 각 sequence 별 시간, 각 source 양, barrier 두께 조절 및 타입변형, Arsenic flux 등의 조건을 조절하여 실험하였다. 또한 위에서 선택된 몇 가지 active layer 를 이용하여 In(Ga)AlAs QD LD 성장 조건 변화를 시도하였다.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.919-926
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• 2023

To analyze the cause of the destruction of thin, carbon-backed lithium fluoride targets during a measurement of the fusion of ⁷Li and ¹⁷O, we estimate theoretically the lifetimes of carbon and LiF films due to sputtering, thermal evaporation, and lattice damage and compare them with the lifetime observed in the experiment. Sputtering yields and thermal evaporation rates in carbon and LiF films are too low to play significant roles in the destruction of the targets. We estimate the lifetime of the target due to lattice damage of the carbon backing and the LiF film using a previously reported model. In the experiment, elastically scattered target and beam ions were detected by surface silicon barrier (SSB) detectors so that the product of the beam flux and the target density could be monitored during the experiment. The areas of the targets exposed to different beam intensities and fluences were degraded and then perforated, forming holes with a diameter around the beam spot size. Overall, the target thickness tends to decrease linearly as a function of the beam fluence. However, the thickness also exhibits an increasing interval after SSB counts per beam ion decreases linearly, extending the target lifetime. The lifetime of thin LiF film as determined by lattice damage is calculated for the first time using a lattice damage model, and the calculated lifetime agrees well with the observed target lifetime during the experiment. In experiments using a thin LiF target to induce nuclear reactions, this study suggests methods to predict the lifetime of the LiF film and arrange the experimental plan for maximum efficiency.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.4 no.2
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• pp.117-131
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• 2006

A coupled T-H-M(Thermo-Hydro-Mechanical) analysis was carried out for KENTEX (KAERI Engineering-scale T-H-M Experiment for Engineered Barrier System), which is a facility for validating the coupled T-H-M behavior in the engineered barrier system of the Korean reference HLW(high-level waste) disposal system. The changes of temperature, water saturation, and stress were estimated based on the coupled T-H-M analysis, and the influence of the types of mechanical constitutive material laws was investigated by using elastic model, poroelastic model, and poroelastic-plastic model. The analysis was done using ABAQUS, which is a commercial finite element code for general purposes. From the analysis, it was observed that the temperature in the bentonite increased sharply for a couple of days after heating the heater and then slowly increased to a constant value. The temperatures at all locations were nearly at a steady state after about 37.5 days. In the steady state, the temperature was maintained at $90^{\circ}C$ at the interface between the heater and the bentonite and at about $70^{\circ}C$ at the interface between the bentonite and the confining cylinder. The variation of the water saturation with time in bentonite was almost same independent of the material laws used in the coupled T-H-M processes. By comparing the saturation change of T-H-M and that of H-M(Hydro-Mechanical) processes using elastic and poroelastic material mod31 respectively, it was found that the degree of saturation near the heater from T-H-M calculation was higher than that from the coupled H-M calculation mainly because of the thermal flux, which seemed to speed up the saturation. The stresses in three cases with different material laws were increased with time. By comparing the stress change in H-M calculation using poroelasetic and poroelasetic-plastic model, it was possible to conclude that the influence of saturation on the stress change is higher than the influence of temperature. It is, therefore, recommended to use a material law, which can model the elastic-plastic behavior of buffer, since the coupled T-H-M processes in buffer is affected by the variation of void ratio, thermal expansion, as well as swelling pressure.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1663-1670
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• 2006

Single crystal Fe thin films were grown directly onto n-Si(111) substrates by pulsed electrodeposition. Cyclic Voltammogram(CV) indicated that the $Fe^{2+}/n-Si(111)$ interface shows a good diode behavior by forming a Schottky barrier. From Mott-Schottky (MS) relation, it is found that the flat-band potential of n-Si(111) substrate and equilibrium redox potential of $Fet^{2+}$ ions are -0.526V and -0.316V, respectively. The nucleation and growth kinetics at the initial reaction stages of Fe/n-Si(111) substraste was studied by current transients. Current transients measurements have indicated that the deposition process starts via instantaneous nucleation and 3D diffusion limited growth. After the more deposition, the deposition flux of Fe ions was saturated with increase of deposition time. from the as-deposited sample obtained using the potential pulse of 1.4V and 300Hz, it is found that Fe nuclei grows to three dimensional(3D) islands with the average size of about 100nm in early deposition stages. As the deposition time increases, the sizes of Fe nuclei increases progressively and by a coalescence of the nuclei, a continuous Fe films grow on the Si surface. In this case, the Fe films show a highly oriented columnar structure and x-ray diffraction patterns reveal that the phase ${\alpha}-Fe$ grows on the n-Si(111) substrates.