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Growth and Structural Properties of Fe Thin Films Electrodeposited on n-Si(111)  

Kim Hyun-Deok (Department of Electronic Engineering, Jinju National University)
Park Kyeong-Won (Department of Chemistry and RINS, Gyeongsang National University)
Lee Jong-Duk (Department of Physics and RINS, Gyeong National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.10, no.9, 2006 , pp. 1663-1670 More about this Journal
Abstract
Single crystal Fe thin films were grown directly onto n-Si(111) substrates by pulsed electrodeposition. Cyclic Voltammogram(CV) indicated that the $Fe^{2+}/n-Si(111)$ interface shows a good diode behavior by forming a Schottky barrier. From Mott-Schottky (MS) relation, it is found that the flat-band potential of n-Si(111) substrate and equilibrium redox potential of $Fet^{2+}$ ions are -0.526V and -0.316V, respectively. The nucleation and growth kinetics at the initial reaction stages of Fe/n-Si(111) substraste was studied by current transients. Current transients measurements have indicated that the deposition process starts via instantaneous nucleation and 3D diffusion limited growth. After the more deposition, the deposition flux of Fe ions was saturated with increase of deposition time. from the as-deposited sample obtained using the potential pulse of 1.4V and 300Hz, it is found that Fe nuclei grows to three dimensional(3D) islands with the average size of about 100nm in early deposition stages. As the deposition time increases, the sizes of Fe nuclei increases progressively and by a coalescence of the nuclei, a continuous Fe films grow on the Si surface. In this case, the Fe films show a highly oriented columnar structure and x-ray diffraction patterns reveal that the phase ${\alpha}-Fe$ grows on the n-Si(111) substrates.
Keywords
${\alpha}-Fe$ growth mode; Si(111); electrodeposition; metal/semiconductor interface;
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1 P. Bertoncini, D. Berling, P. Wetzel, A. Mehdaoui, B. Loegel, G. Gewinner, C. Ulhaq-Bouillet and V. Pierron-Bohnes, 'Epitaxial magnetic Fe layers grown on Si(001) by means of a template method', Surf. Sci. 454/456, 755 (2000)   DOI   ScienceOn
2 K. H. Kim, J. D. Lee and J.-S. Kang, 'Fe3Si Phase Formation at Fe/Si(111)- $7{\times}7$ Interface at Room Temperature', J. Jpn. Appl. Phys. 37, 4949 (1998)   DOI
3 A. P. O'Keeffe, O. I. Kasyutich, W. Schwarzacher, L. S. de Oliveira, and A. A. Pasa, 'Giant magnetoresistance in multilayers electrodeposited on n-Si', Appl. Phys. Lett. 73, 1002 (1998)   DOI   ScienceOn
4 F. Y. Yang, Kai Liu, Kimin Hong, D. H. Reich, P. C. Searson, and C. L. Chen, 'Large Magnetoresistance of Electrodeposited Single-Crystal Bismuth Thin Films', Science, 284, 1335 (1999)   DOI   ScienceOn
5 N. H. Phan, M. Schwartz, and K. Nobe, 'Pulsed deposition of Fe-Ni-Co. alloys', Electrochim. Acta 39, 449 (1994)   DOI   ScienceOn
6 J. Chrost, J. J. Hinarejos, P. Segovia, E. G. Michel and R. Miranda, 'Iron silicides grown on Si(100): metastable and stable phases', Surf. Sci. 371, 297 (1997)   DOI
7 S. R. Morrison, Electrochemistry at Semiconductor and Oxidezed Metal Electrodes, Plenum, New York, (1980)
8 M. Cerisier, K. Attenborough, J. -P. Celis, and C. Van. Haesendonck, 'Structure and magnetic properties of electrodeposited Co films onto Si(100)', Appl. Surf. Sci. 166, 154 (2000)   DOI   ScienceOn
9 G. Gunawardena, G. Hills, T. Montenegro, and B. Scharifker, 'Electrochemical Nucleation: Part1. General Considerations', J. Electroanal. Chem. 138, 225 (1982)   DOI   ScienceOn
10 S. Yoshimura, S. Yoshihara, T. Shirakashi, and E. Sato, 'Preferred Orientation and Morphology of Electrodeposited Iron From Iron(II) Chloride Solution', Electrochim. Acta, 39, 589 (1994)   DOI   ScienceOn
11 R. Krumm, B. Guel, C. Schmitz and G. Staokov, Electrochim. Acta, 45, 3255 (2000)   DOI   ScienceOn
12 Rudiger Memming, Semiconductor Electrochemistry, (WILEY-VCH, 2001)
13 J. M. Gallego, J. M. Garcia, J. E. Ortega, A. L. Vazquez de Parga, J. de la Figuera, C. Ocal and R. Miranda, 'Growth of epitaxial iron disilicide on Si(100)', Surf. Sci. 269/270, 1016 (1992)   DOI   ScienceOn
14 J. C. Ziegler, A. Reitzle, O. Bunk, J. Zegenhagen, and D. M. Kolb, 'Metal deposition on n-Si(111): H electrodes', Electrochim. Acta 45, 4599 (2000)   DOI   ScienceOn
15 K. H. Kim, J. D. Lee, J. J. Lee, C. K. Choi, J. Y. Lee, and Y. P. Lee, 'The Growth and the Electrical Properties of Epitaxial $CrSi_{2}$ Films Prepared on Si(111) Substrates', J. Korean Phys. Soc. 33, 71 (1998)
16 Y. S. Park, K. H. Kim, J. J. Lee, and T. W. Kang, 'Structural and Optical Properties of $Cd_{2}GeSe_{4}$ Thin Films Grown by Thermal Evaporation', J. Korean Phys. Soc. 44. 875 (2004)
17 Nam-Oh Kim, Hyung-Gon Kim and Woo-Sun Lee, 'Optical and Electrical Properties of ${\beta}$-FeSi2 Single Crystals', J. Korean Phys. Soc. 38, 803 (2001)
18 J. Alvarez, J. J. Hinarejos, E. G. Michel and R. Miranda, 'Determination of the Fe/Si(111) phase diagram by means of photoelectron spectroscopies', Surf. Sci. 287/288, 490 (1993)   DOI   ScienceOn
19 A. M. Fajardo, and N. S. Lewis, 'Rate Constants for Charge Transfer Across Semiconductor-Liquid Interfaces', Science 274, 969 (1996)   DOI
20 M. De Crescenzi, G. Gaggiotti, N. Motta, F. Patella and A Balzarotti, 'Bremsstrahlung-isochromat-spectroscopy and x-ray-photoelectron-spectroscopy investigation of the electronic structure of ${\beta}-FeSi_{2}$ and the Fe/Si(111) interface', Phys. Rev. B 42, 5871 (1990)   DOI
21 A. Mascaraque, J. Avila, C. Teodorescu and M. C. Asensio, 'Atomic structure of the reactive Fe/Si(111)-$7{\times}7$ interface', Phys. Rev. B 55, R7315 (1997)   DOI
22 G. Oskam and P. C. Searson, 'Electrochemical nucleation and growth of gold on silicon (100) surfaces', Surf. Sci. 446, 103 (2000)   DOI
23 B. Scharifker, and G. Hills, 'Theoretical and experimental studies of multiple nucleation', Electrochim. Acta 28, 879 (1983)   DOI   ScienceOn
24 S. M. Sze, The Physics of Semiconductor Devices, Wiley, New York, (1981)