• International journal of advanced smart convergence
• /
• 제2권2호
• /
• pp.16-18
• /
• 2013

In this paper, we develop a method to design a flexible thin film audio systems utilizing Polyvinylidene fluoride. The system we designed showed the properties of increased transparency and sound pressure levels. As an input terminal transparent oxide thin film is adopted. In order to provide dielectric insulation, a transparent insulating oxide thin film is coated to obtain double -layered structure. In the range of visible light, the output from the output of the system showed an increased and improved sound pressure level. The piezoelectric polymer film of polyvinylidene fluoride (PVDF) is used to produce mechanical vibration due to the applied electrical voltage signal. An analog electric voltage signal is transformed into sound waves in the audio system.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
• /
• pp.335-338
• /
• 1987

• 대한소아치과학회지
• /
• 제35권4호
• /
• pp.662-670
• /
• 2008

필름 형태의 새로운 불소 delivery system을 개발하고 이에 대한 치아 우식증 예방효과를 기존의 전문가 불소 도포 제재인 APF gel 및 불소 바니쉬와 비교 평가해 보고자 하였다. 소의 법랑질 시편에 APF gel(60 seconds taste$^{(R)}$, 1.23% APF, PASCAL, USA)과 불소 바니쉬(CavityShield$^{TM}$, 5% sodium fluoride, Ominii Pharmaceuticals, USA), 그리고 최근 개 발된 3% 불소 함유 필름, 5% 불소 함유 필름 시제품을 도포한 후 인공 우식을 유발시켜 표면미세경도와 병소깊이를 측정하 여 다음과 같은 결과를 얻었다. 1. 실험군과 대조군의 표면미세경도의 차이는 II군, IV군, III군, I군의 순으로 컸으며, I군은 II군, III군, IV군에 비해 유의 한 차이가 있었으나, II군, III군, IV군 간에는 유의한 차이가 없었다. 2. 실험군과 대조군의 병소 깊이의 차이는 II군이 가장 컸으며(P<0.05), I군이 가장 작았다(P<0.05). III군과 IV군은 유의한 차이가 없었다. 이상의 결과로 미루어 보아 새로 개발된 불소 전달 시스템인 불소 함유 필름은 불소 젤보다 치아 우식증 예방효과가 우수한 것으로 나타났으며, 불소 바니쉬와 유사한 효과를 나타내었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권12호
• /
• pp.755-760
• /
• 1999

Various fluoride films were investigated for a gate insulator of thin film transistor application. Conventional oxide containing materials like $SiO_2\;Ta_2O_5\; and \; Al_2O_3$ exhibited high interface states which lead to an increased threshold voltage and poor stability of TFT. In this paper, we investigated gate insulators using a binary matrix system of fluoride such as $CaF_2,\; SrF_2\; MgF_2,\; and\; BaF_2$. These materials exhibited an improvement in lattice mismatch, interface state and electrical stability. MIM and MIS devices were employed for an electrical characterization and structural property examination. Among the various fluoride materials, $CaF_2$ film showed an excellent lattice mismatch of 5%, breakdown electric field higher than 1.2MV/cm and leakage current density of $10^{-7}A/cm^2$. MIS diode having $Ca_2$ film as an insulation layer exhibited the interface states as low as $1.58\times10^{11}cm^{-2}eV^{-1}$. This paper probes a possibility of new gate insulator materials for TFT applications.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
• /
• pp.276-277
• /
• 2006

In order to accelerate the sintering of Al-Bronze powder covered with passive oxide film, we focused on the way to add Al-Ca fluoride consisting of $AlF_3$ and $CaF_2$, examined the effect of the $CaF_2$ mixing rate in Al-Ca fluoride, the amount of the added Al-Ca fluoride and the sintering temperature on sintering properties of Al-Bronze powder and considered the mechanism of the sintering acceleration. Al-Bronze powder was sintered most effectively by adding Al-Ca fluoride with the $CaF_2$ mixing rate of 20mass%. If the amount of added fluoride was over 0.05mass% and the sintering temperature was over 1123K, the sintering acceleration of the Al-Bronze powder appears. Regarding the mechanism of the sintering acceleration, it was presumed that $Al_2O_3$ film on the surface of the Al-Bronze particles was removed in the process of the formation of gaseous AlOF by the reaction with $AlF_3$, and the reaction was accelerated further by the presence of the liquid phase which is formed in Al-Ca fluoride.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
• /
• pp.65-66
• /
• 2000

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.

• 대한금속재료학회지
• /
• 제48권3호
• /
• pp.218-224
• /
• 2010

Direct copper electroplating on Mg alloy AZ31B was carried out in a traditional pyrophosphate copper bath containing potassium fluoride. Electrochemical impedance spectroscopy and polarization methods were used to study the effects of added potassium fluoride on electrochemical behavior. The chemical state of magnesium alloy in the electroplating bath was analyzed by X-ray photoelectron spectroscopy. Adhesion of the copper electroplated layer was also tested. Due to the added potassium fluoride, a magnesium fluoride film was formed in the pyrophosphate copper bath. This fluoride film inhibits dissolution of Mg alloy and enables to electroplate copper directly on it. A dense copper layer was formed on the Mg alloy. Moreover, this copper layer has a good adhesion with Mg alloy substrate.

• Bulletin of the Korean Chemical Society
• /
• 제16권11호
• /
• pp.1133-1134
• /
• 1995

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
• /
• pp.76-79
• /
• 2000

The 3$\mu\textrm{m}$-thick PVDF (Polyvinyiidene fluoride) thin film have been prepared using physical vapor deposition with electric field, and its FT-IR specrum, dielectric property and electric conduction phenomenon have been investigated. Since the characteristic peaks ate detected at 509.45 and 1273.6〔cm〕 in the FT-IR spectrum, we are confirmed that the ${\beta}$ -phase is dominant in the PVDF thin film. In the results of dielectric properties, the PVDF thin film shows anomalous dispersion, i.e. gradual decrease of dielectric constant with increase of frequency, and also that the dielectric absorption point changes from 200Hz to 7000Hz with increasing temperature of thin film, which is consistent with the Debye's theory. The activation energy (ΔH) obtained from temperature dependence of dielectric loss is 21.64 ㎉/㏖. We confirm that the electric conduction mechanism of PVDF thin film is dominated by ionic conduction by investigating the dependence of the leakage current of the thin film on the temperature and the electric field.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
• /
• pp.526-529
• /
• 2002

Various fluoride films on a glass substrate were prepared and characterized in order to determine the best seed layer for a microcrystalline silicon (${\mu}c$-Si) film growth. Among the various group-IIA-fluoride systems, the $CaF_2$films on glass substrates illustrated (220) preferential orientation and a lattice mismatch of less than 0.7% with Si. $CaF_2$ films exhibited a dielectric constant between $4.1{\sim}5.2$ and an interface trap density ($D_{it}$ as low as $1.8{\times}10^{11}\;cm^{-2}eV^1$. Using the $CaF_2$/glass structure, we were able to achieve an improved ${\mu}c$-Si film at a process temperature of 300 $^{\circ}C$. We have achieved the ${\mu}c$-Si films with a crystalline volume fraction of 65%, a grain size of 700 ${\AA}$, and an activation energy of 0.49 eV.