• Title/Summary/Keyword: Flow-Rate Uniformity

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Characterization of Deep Dry Etching of Silicon Single Crystal by HDP (HDP를 이용한 실리콘 단결정 Deep Dry Etching에 관한 특성)

  • 박우정;김장현;김용탁;백형기;서수정;윤대호
    • Journal of the Korean Ceramic Society
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    • v.39 no.6
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    • pp.570-575
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    • 2002
  • The present tendency of electrical and electronics is concentrated on MEMS devices for advantage of miniaturization, intergration, low electric power and low cost. Therefore it is essential that high aspect ratio and high etch rate by HDP technology development, so that silicon deep trench etching reactions was studied by ICP equipment. Deep trench etching of silicon was investigated as function of platen power, etch step time of etch/passivation cycle time and SF$\_$6/:C$_4$F$\_$8/ flow rate. Their effects on etch profile, scallops, etch rate, uniformity and selectivity were also studied.

Deposition of SiO2 Thin Film for the Core of Planar Light-Wave-Guide by Transformer Coupled Plasma Chemical-Vapor-Deposition (TCP-CVD 장비를 활용한 광도파로용 Core-SiO2 증착)

  • Kim, Chang-Jo;Shin, Paik-Kyun
    • Journal of the Korean Vacuum Society
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    • v.19 no.3
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    • pp.230-235
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    • 2010
  • In this paper, we controlled the deposition rate and reflective index with process conditions that are TCP power, gas flow ratio and bias for optical properties of $SiO_2$ thin film using TCP-CVD equipment. We obtained a excellent $SiO_2$ thin film which has a excellent uniformity (<1 [%]), deposition rate (0.28 [${\mu}m$/ min]) and reflective index (1.4610-1.4621) within 4" wafer with process conditions ($SiH_4:O_2$=50 : 100 [sccm], TCP power 1 [kW], bias 200 [W]) at [$300^{\circ}C$].

Numerical Analysis-Based Design of PEMFC Channel, Fabrication of Channels, and Performance Test Using SU-8 (수치해석을 통한 PEMFC 채널의 설계와 SU-8을 이용한 채널 제작 및 성능 평가)

  • Choi, In-Jea;Wang, Hak-Min;Choi, Kap-Seung;Kim, Hyung-Man
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.34 no.4
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    • pp.349-354
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    • 2010
  • Fuel cells have attracted enormous interest as new power sources because the cells can be used to solve the problem of environmental pollution as well as the natural-resource exhaustion problem. In this study, hydrogen-gas flow in microchannels of different shapes was numerically analyzed to improve the efficiency of a microfuel cell. Flow characteristics in six microchannels of different shapes but under identical boundary conditions were simulated. The analysis result shows that the flow characteristics such as velocity, uniformity, and flow rate, greatly depend upon the channel shape. This implies that the efficiency of microfuel cell can be expected to be increased by adopting the optimal configuration of channel shape for hydrogen-gas flow. The experimental results show that power density of a PEMFC with a microflow channel is higher than that of a PEMFC without a microflow channel; however, a durable catalyst is required in MEA.

Preparation of Large Area Plasma Source by Helical Resonator Arrays (Helical Resonator 배열을 통한 대면적 고밀도 Plasma Source)

  • 손민영;김진우;박세근;오범환
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.282-285
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    • 2000
  • Four helical resonators are distributed in a 2 ${\times}$ 2 array by modifying upper part of the conventional reactive ion etching(RIE) type LCD etcher in order to prepare a large area plasma source. Since the resonance condition of the RF signal to the helical antenna, one RF power supply is used for delivering the power efficiently to all four helical resonators without an impedance matching network Previous work of 2 ${\times}$ 2array inductively coupled plasma(ICP)requires one matching circuit to each ICP antenna for more efficient power deliverly Distributions of ion density and electron temperature are measured in terms of chamber pressure, gas flow rate and RF power . By adjusting the power distribution among the four helical resonator units, argon plasma density of higher than 10$\^$17/㎥ with the uniformity of better than 7% can be obtained in the 620 ${\times}$ 620$\textrm{mm}^2$ chamber.

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Shape Optimization of Inlet Part of a PCHE (인쇄형 열교환기 입구부의 최적설계)

  • Koo, Gyoung-Wan;Lee, Sang-Moon;Kim, Kwang-Yong
    • The KSFM Journal of Fluid Machinery
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    • v.16 no.2
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    • pp.35-41
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    • 2013
  • Inlet part of a printed circuit heat exchanger has been optimized by using three-dimensional Reynolds-Averaged Navier-Stokes analysis and surrogate modeling techniques. Kriging model has been used as the surrogate model. The objective function for the optimization has been defined as a linear combination of uniformity of mass flow rate and the pressure loss with a weighting factor. For the optimization, the angle of the inlet plenum wall, radius of curvature of the inlet plenum wall, and width of the inlet pipes have been selected as design variables. Twenty six design points are obtained by Latin Hypercube Sampling in design space. Through the optimization, considerable improvement in the objective function has been obtained in comparison with the reference design of PCHE.

Reactive Ion Etching of a-Si for high yield and low process cost

  • Hur, Chang-Wu
    • Journal of information and communication convergence engineering
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    • v.5 no.3
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    • pp.215-218
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    • 2007
  • In this paper, amorphous semiconductor and insulator thin film are etched using reactive ion etcher. At that time, we experiment in various RIE conditions (chamber pressure, gas flow rate, rf power, temperature) that have effects on quality of thin film. The using gases are $CF_4,\;CF_4+O_2,\;CCl_2F_2,\;CHF_3$ gases. The etching of a-Si:H thin film use $CF_4,\;CF_4+O_2$ gases and the etching of $a-SiO_2,\;a-SiN_x$ thin film use $CCl_2F_2,\;CHF_3$ gases. The $CCl_2F_2$ gas is particularly excellent because the selectivity of between a-Si:H thin film and $a-SiN_x$ thin film is 6:1. We made precise condition on dry etching with uniformity of 5%. If this dry etching condition is used, that process can acquire high yield and can cut down process cost.

Neural Network Models of Oxide Film Etch Process for Via Contact Formation (Via Contact 형성을 위한 산화막 식각공정의 신경망 모델)

  • 박종문;권성구;박건식;유성욱;배윤구;김병환;권광호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.1
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    • pp.7-14
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    • 2002
  • In this paper, neutral networks are used to build models of oxide film etched In CHF$_3$/CF$_4$ with a magnetically enhanced reactive ion etcher(MERIE). A statistical 2$\^$4-1/ experimental design plus one center point was used to characterize relationships between process factors and etch responses. The factors that were varied include radio frequence(rf) power, pressure, CHF$_3$ and CF$_4$ flow rates. Resultant 9 experiments were used to train neural networks and trained networks were subsequently tested on its appropriateness using additionally conducted 8 experiments. A total of 17 experiments were thus conducted for this modeling. The etch responses modeled are dc bias voltage, etch rate and etch uniformity A qualitative, good agreement was obtained between predicted and observed behaviors.

Fabrication of Pentacene Thin Film Transistors by using Organic Vapor Phase Deposition System (Organic Vapor Phase Deposition 방식을 이용한 펜타센 유기박막트랜지스터의 제작)

  • Jung Bo-Chul;Song Chung-Kun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.6
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    • pp.512-518
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    • 2006
  • In this paper, we investigated the deposition of pentacene thin film on a large area substrate by Organic Vapor Phase Deposition(OVPD) and applied it to fabrication of Organic Thin Film Transistor(OTFT). We extracted the optimum deposition conditions such as evaporation temperature of $260^{\circ}C$, carrier gas flow rate of 10 sccm and chamber vacuum pressure of 0.1 torr. We fabricated 72 OTFTs on the 4 inch size Si Wafer, Which produced the average mobility of $0.1{\pm}0.021cm^2/V{\cdot}s$, average subthreshold slope of 1.04 dec/V, average threshold voltage of -6.55 V, and off-state current is $0.973pA/{\mu}m$. The overall performance of pentacene TFTs over 4 ' wafer exhibited the uniformity with the variation less than 20 %. This proves that OVPD is a suitable methode for the deposition of organic thin film over a large area substrate.

Etch rate uniformity control by current ratio of dual coil at 300 mm wafer etcher (300 mm 웨이퍼용 식각 장비에서 병렬 안테나의 전류비 조절에 의한 식각 균일도 측정)

  • Hong, Gwang-Gi;Choe, Ji-Seong;Yang, Won-Gyun;Ju, Jeong-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2011.05a
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    • pp.155-155
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    • 2011
  • Dual coil을 사용하는 상용 AMAT DPS II 300 mm Centura 장비의 antenna의 전류비를 조절하여 $SiO_2$의 식각 균일도를 평가하였다. Inner turn과 outer turn의 흐르는 전류비를 분배 capacitor로 조절하여 16.9 %의 이온 전류 밀도 분포를 확인하였고, 투입 전력에 따라 200 W에서 12 %, 800 W에서 9 %로 점차 감소하는 경향을 확인하였다. 이때 300 mm wafer의 반지름 방향으로의 식각 균일도는 3 %로 측정되었고, FRC (flow ratio control)는 0.5에서 가장 균일한 결과를 얻었다.

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Determination of Prednisolone in Tablets by High Performance Liquid Chromatography (HPLC를 이용(利用)한 제제중(製劑中) 프레드니솔론의 함량균일성시험(含量均一性試驗)에 관한 연구(硏究))

  • Kim, Hyung-Kook;Lee, Cheol-Kyu;Ko, Geun-Il;Kim, Jae-Back
    • Journal of Pharmaceutical Investigation
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    • v.13 no.2
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    • pp.59-65
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    • 1983
  • A convenient high performance liquid chromatographic method for the quantitative determination and content uniformity of prednisolone in tablets is described. The prednisolone was chromatographed using a ${\mu}-Bondapak\;C_{18}$ column and the eluent 70% MeOH at a flow rate 1. 0ml/min. Diethylstilbestrol was used as an internal standard. The UV detector response at 254nm was linear over a range of $10{\sim}60{\mu}g/ml$ under conditions of the analysis. Reproducibility studies gave relative standard deviations of $0.3{\sim}0.5%$.

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