• Journal of Korean Society of Transportation
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• v.33 no.2
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• pp.204-213
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• 2015

The congestion of pedestrians impedes the utilization efficiency of a subway station. Conflicts among pedestrians due to unseparated pedestrian flows not only increase the impedance of pedestrian mobility but also negatively affect on pedestrian safety. This paper analyzes the travel characteristics of bi-directional pedestrian flow based on microscopic movements, and evaluates the operation efficiency on separating the traffic line. The subway station was simulated in a 2-D grid structure by applying Discrete Element Method, and the movement is organized in each cell of the grid. As a result, the model explicates that separating the traffic line and encouraging the 'Keep right rule' would be mostly effective for the conflicting flows. Therefore, applying the 'Walking Guidance System' would be efficient to improve the pedestrian convenience and mobility.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.12C
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• pp.1245-1250
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• 2002

For recent years, the environment of use on internet has been changed from the wired internet access to the wireless internet access increasingly, and the use of real time application data has been increased. Therefore the research and evolution of wireless network for providing of user's mobility and QoS at the same time must be essential. IETF already proposed Mobile IPv6 for providing mobility and RSVP for QoS through resource reservation. These future are expected to be used not only wired network but also wireless network. But there are not yet proposed the integration and efficient interworking of two mechanism. For the solution of problem on efficient interworking issue, for instance signaling overhead and reservation delay increasing due to often handoff, this paper first proposed to use of IETF Cellular IP based on Mobile IPv6 for wireless network model with fast mobility and a improved RSVP mechanism using the flow label field in IPv6 header.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.20 no.4
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• pp.13-27
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• 2021

In this study, the impact of traffic flow on the market penetration rate of autonomous vehicles(AV) was analyzed using the data for the year 2020 of the Yongin IC~Yangji IC section of Yeongdong Expressway. For this analysis, a microscopic traffic simulation model VISSIM was utilized. To construct the longitudinal control of the AV, the Intelligent Driver Model(IDM) was built and applied, and the driving behavior was verified by comparison with a normal vehicle. An examination of the study results of mobility and safety according to the market penetration rate of the AV, showed that the network's mobility improves as the market penetration rate increases. However, from the point of view of safety, the network becomes unstable when normal vehicles and AVs are mixed, so there should be a focus on traffic management for ensuring safety in mixed traffic situations.

• Transactions of the Korean hydrogen and new energy society
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• v.34 no.5
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• pp.456-464
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• 2023

In this study, a compact hydrogen liquefaction system was constructed with the aim of creating a data storage and monitoring program for liquid hydrogen production. This program was designed to receive and record signals from diverse control equipment through the LabVIEW software. A range of measurement instruments were devised to collect data, encompassing variables such as flow rate, pressure, temperature, and liquid level. As a result, it was possible to directly check the production of liquid hydrogen by obtaining various data of condensed liquid hydrogen. In addition, it was confirmed that long-term storage of liquid hydrogen is possible by developing automatic ON/OFF through the LabVIEW program.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.66-69
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• 2001

Effect of $N_2$ flow rate on properties of GaN thin films grown by plasma-enhanced molecular beam epitaxy(PEMBE) was discussed to optimize the quality of thin films. It was found that at low $N_2$ flow rate indicating high III/V flux ratio, the growth rate of GaN thin films was controlled by $N_2$ flux, and at high $N_2$ flow rate the growth rate was not controlled by $N_2$ flux any longer. It was also found that III/V flux ratio affected film quality. The film grown at higher $N_2$ flow rate showed low background carrier concentration, higher carrier mobility, and narrow FWHM in band-edge emission of low temperature PL. It is thought that the film in more Ga flux region was grown by 2-dimensional layer-by-layer growth mode, and the film in more nitrogen region was grown by 3-D island growth mode. All samples exhibited a good crystallinity.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.6-11
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• 2018

In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.

• Journal of Convergence for Information Technology
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• v.11 no.4
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• pp.130-136
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• 2021

This study investigated the general characteristics of mobility disadvantaged persons with disabilities, and to suggest implications to ensure personal mobility with the greatest possible independence for the physically disabled in community. The survey questionnaire included the categories as follows: the general characteristics of the participants, the status of outing and mobility, usage of low-floor buses & taxi for the disabled, service improvement, and mobile support center. Data collected from 219 with physical disabilities were analyzed for this purpose by using descriptive statistics. The study results showed that 54.6% of the total tended to go out everyday, and 17.0% rarely. 53.4% could go out without any assistance, and the major obstacles not to go out were stairs and inconvenience of public transportation. 26.9% used low-floor buses, and 71.1% preferred to use taxi for the disabled. The average waiting time for the usage of low-flow buses and taxi was 66.57 minute and 42.65 minute, separately. 78.7% insisted that the function of mobile support center in the community should be expanded, whereas only 49.8% recognized the role of mobile support center. Based on the study results, the researchers suggested to facilitate access by persons with disabilities to mobility aids, and to improve the actual state of pedestrian environment. In addition, the function of mobile support center should be expanded to help the mobility disadvantaged persons live independently in community, thereby contributing to the promotion of their quality of life.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.187-191
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• 2007

The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.390-392
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• 2013

The research was observed the characteristic of ZnO based oxide semiconductors for the transparent conducting display. The optical-physical properties of ZnO based oxide semiconductors) grown on p-Si wafer were presented. ZnO based oxide semiconductors was prepared by the RF magnetron sputtering system. The characteristic of ZnO based oxide semiconductorswas strongly influenced by the amount of localized electron state by the defects. The PL spectra moved to long wave number with increasing the defects in the film. The mobility of a-IGZO film was increased with increasing the oxygen gas flow rate. The resistivity of ZnO based oxide semiconductors was also related to the mobility of ZnO based oxide semiconductors, and the mobility increased at the sample with low resistivity. The electric characteristic of a-IGZO TFTs showed that it is an n-type semiconductor.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.8B
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• pp.1469-1476
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• 2000

We have to consider the drain current as consisting of two components the vertical electric field and the longitudinal electric field because the drain current is almost totally due to the presence of drift in strong inversion of n-MOS FET. Especially the mobility of electrons in the inversion layer is smaller than the bulk mobility because the vertical electric field component that is generated by the effect of the gate voltage is perpendicular to the direction of normal current flow. By the multi-box segmentation technical method that are proposed in this paper we calculated the inversion layer depth and analyzed the vertical electric field component which has an large influence on mobility model.