• Title/Summary/Keyword: Floating N+

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EEPROM Charge Sensors (EEPROM을 이용한 전하센서)

  • Lee, Dong-Kyu;Jin, Hai-Feng;Yang, Byung-Do;Kim, Young-Suk;Lee, Hyung-Gyoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.8
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    • pp.605-610
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    • 2010
  • The devices based on electrically erasable programmable read-only memory (EEPROM) structure are proposed for the detection of external electric charges. A large size charge contact window (CCW) extended from the floating gate is employed to immobilize external charges, and a control gate with stacked metal-insulator-metal (MIM) capacitor is adapted for a standard single polysilicon CMOS process. When positive voltage is applied to the capacitor of CCW of an n-channel EEPROM, the drain current increases due to the negative shift of its threshold voltage. Also when a pre-charged external capacitor is directly connected to the floating gate metal of CCW, the positive charges of the external capacitor make the drain current increase for n-channel, whereas the negative charges cause it to decrease. For an p-channel, however, the opposite behaviors are observed by the external voltage and charges. With the attachment of external charges to the CCW of EEPROM inverter, the characteristic inverter voltage behavior shifts from the reference curve dependent on external charge polarity. Therefore, we have demonstrated that the EEPROM inverter is capable of detecting external immobilized charges on the floating gate. and these devices are applicable to sensing the pH's or biomolecular reactions.

Purification and Single Crystal Growth of Molybdenum by Electron Beam Floating Zone Melting (Electron Beam Floating Zone Melting에 의한 몰리브덴의 정련 및 단결정 성장에 관한 연구)

  • 최용삼;지응준
    • Korean Journal of Crystallography
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    • v.3 no.2
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    • pp.85-97
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    • 1992
  • EBFZM( Electron Beam Floating Zone Melting) 법을 이용하여 몰리브덴에서의 금속계 불순물과 침입형 불순물의 정련기구 및 단결정 성장기구를 연구하 였다. Fe, Cr, Co등의 금속계 불순물은 몰리브덴과의 평형증기압의 차이에 따른 불순물의 선택적 증발에 의하여 우수한 정련효과를 나타내며, 몰리브덴보다 응점이 높은 Ta, W는 잘 제거되지 않았다. 한편 대역 정제에 의한 정련효과는 미약함을 확인하였다. EBF ZM은 C,0,N등의 침입형 불순물의 정련에도 효과적 이었다. 본 연구의 모든 조건에서 몰리브덴은 단결정으로 성장하였으며 2차 재결정 epitaxy에 의한 단결 정 성장기구가 제시되었다. 몰리브덴 단결정 내의 전 위밀도는 strain-anneal법에 의한 단결정의 경우보다 높았으며,본 실험의 열처리 조건에서는 변화하지 않았다. The purification and single crystal growth mechanisms of molybdenum were analysed in EBFZM ( electron beam floating zone melting). Metallic impurities of Fe, Cr, Co were purified efficiently but Ta and W were not removed well in this study. It was due to a preferential evaporation of the elements caused by the difference in equillibrium vapor pressure between the elements and molybdenum. The pu- rification effect by zone refining was not significant. The EBFZM also refined the interstitial impurities of C, 0 and N, effectively. The single crystals of molybdenum were grown regardless of the experimental conditions and the secondary recrystallization epitaxy was surge sled as a growth mechanism. The dislocation density in single crystal was higher than that by strain-anneal method, and was not reduced by heat treatments.

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Ruby single crystal growth by the xenon-arc type floating zone method (Xenon-arc type floating zone법에 의한 루비 단결정 성장)

  • 정일형;임창성;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.4
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    • pp.521-527
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    • 1997
  • Ruby single crystals of 6-7 mm in dialneter and 20-25 mm in length were grown by the xenon-arc type floating zone method using a self-designed FZHY1, Calcination and sintering conditions were investigated and optimum growth conditions were established for controlling the factors such as growth rates, rotation speeds and cooling rates. Also the available energy levels of $Cr^{3+}$ were calculated from transmission data. The growth direction of the crystals was [1010] direction identified by Laue back reflection pattern. The distribution of refractive indices on the wafer of the grown crystals was homogeneous except for the edges of the wafer. The crystals could be used as a laser material with a wavelength of 693 nm and a metastate level.

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Varietal Difference Based on Efficiency of Rice Anther Floating Culture

  • Kang, Hyeon-Jung;Lee, Seong-Yeob;Kim, Hyun-Soon;Lee, Jae-Gil
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.47 no.5
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    • pp.335-340
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    • 2002
  • To evaluate the efficiency of anther floating culture according to the maturing group, the varietal difference and classification of fifty varieties was conducted in N6 liquid medium containing 1mg $l^{-1}$ NAA, 0.25 mg $l^{-1}$ kinetin. The efficiency of callus induction was widely ranged from 0 to 113.4%, but the mean callus induction was not significantly different among maturing groups. The efficiency of anther floating culture showed the highest variation in early-maturing group among three maturing groups. The varieties with the best callus induction were Sambaegbyeo and Jinbuolbyeo, while the recalcitrant variety was Obongbyeo in early-maturing group. The efficiency of plant regeneration showed the highest trends in late-maturing group among three maturing groups. The fifty varieties were classified into three groups (distance=0.78) by cluster analysis based on the callus formation and plant regeneration. Group including only two varieties, Shinunbongbyeo and Sambaegbyeo had the excellent androgenic efficiency, and the medium efficiency of Group was included thirty-six varieties. Whereas twelve varieties, including three Tongil varieties were fell into the bad efficiency of Group. Especially, Tongil varieties containing Japonica rice, Obongbyeo were the recalcitrant genotypes for the anther floating culture.

Study on Mooring System Design of Floating Offshore Wind Turbine in Jeju Offshore Area

  • Kim, Hyungjun;Jeon, Gi-Young;Choung, Joonmo;Yoon, Sung-Won
    • International Journal of Ocean System Engineering
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    • v.3 no.4
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    • pp.209-217
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    • 2013
  • This paper presents a mooring design procedure for a floating offshore wind turbine. Offshore environmental data for Jeju are taken from KHOA (Korea Hydrographic and Oceanographic Administration) and used for the environmental conditions in numerical analyses. A semi-submersible-type floating wind system with a 5-MW-class wind turbine studied by the DeepCwind Consortium is applied. Catenary mooring with a studless chain is chosen as the mooring system. Design deliverables such as the nominal sizes of chain and length of the mooring line are decided by considering the long-term prediction of the breaking strength of the mooring lines where a 100-year return period is used. The designed mooring system is verified using a fatigue calculation based on rain-flow cycle counting, an S-N curve, and a Miner's damage summation of rule. The mooring tension process is obtained from time-domain motion analyses using ANSYS/AQWA.

Fabrication of low temperature metal dot nano-floating gate memory using ELA Poly-Si thin film transistor (Poly-Si 기판을 이용한 저온 공정 metal dot nano-floating gate memory 제작)

  • Koo, Hyun-Mo;Shin, Jin-Wook;Cho, Won-Ju;Lee, Dong-Uk;Kim, Seon-Pil;Kim, Eun-Kyu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.120-121
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    • 2007
  • Nano-floating gate memory (NFGM) devices were fabricated by using the low temperature poly-Si thin films crystallized by ELA and the $In_2O_3$ nano-particles embedded in polyimide layers as charge storage. Memory effect due to the charging effects of $In_2O_3$ nano-particles in polyimide layer was observed from the TFT NFGM. The post-annealing in 3% diluted hydrogen $(H_2/N_2)$ ambient improved the retention characteristics of $In_2O_3$ nano-particles embedded poly-Si TFT NFGM by reducing the interfacial states as well as grain boundary trapping states.

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Changes of Mooring Force due to Structural Modification of a Barge Ship (바지선 구조변경이 계류력 변화와 안정성에 미치는 영향)

  • Park, Jung-Hong;Kim, Kwang-Hoon;Moon, Byung-Young;Jang, Tak-Soo
    • The KSFM Journal of Fluid Machinery
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    • v.14 no.5
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    • pp.48-54
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    • 2011
  • Structural modifications of a ship may cause a fatal accident such as sinking and wrecking of ship. Especially, barge ship can be easily reconstructed to load more bulk cargo. In this study, for a real accident case, change of mooring force due to structural modification was analyzed to evaluate accident risk. A two dimensional dynamic model for the barge ship was constructed to compute mooring forces with related to floating motion. The equation of motion was established in Matlab code and buoyancy was calculated by using direct integration of submerged volume. The results showed that wind force, current force, and mooring force after rebuilding was approximately 4.3 kN, 14 kN, 1,561 kN respectively. The maximum force of mooring force according to the length of mooring cable were 1,614 kN at 30 m of mooring cable. Thus, an arbitrary modification of ship lead instability and unreliable result so that illegal rebuilding of ship should be avoided.

A New EEPROM with Side Floating Gates Having Different Work Function from Control Gate

  • Youngjoon Ahn;Sangyeon Han;Kim, Hoon;Lee, Jongho;Hyungcheol Shin
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.3
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    • pp.157-163
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    • 2002
  • A new flash EEPROM device with p^+ poly-Si control gate and n^+ poly-Si floating side gate was fabricated and characterized. The n^+ poly-Si gate is formed on both sides of the p^+ poly-Si gate, and controls the underneath channel conductivity depending on the number of electron in it. The cell was programmed by hot-carrier-injection at the drain extension, and erased by direct tunneling. The proposed EEPROM cell can be scaled down to 50 nm or less. Shown were measured programming and erasing characteristics. The channel resistance with the write operation was increased by at least 3 times.

Improvement of the On-Current for the Symmetric Dual-Gate TFT Structure by Floating N+ Channel

  • LEE, Dae-Yeon;Hwang, Sang-Jun;Park, Sang-Won;Sung, Man-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.342-344
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    • 2005
  • We have simulated a symmetric dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.

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