• Journal of Korean Society on Water Environment
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• v.28 no.1
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• pp.71-77
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• 2012

The performance and characteristics of nutrient removal in wetlands influenced by plant type. We tested a floating plant, Eichhornia crassipes, and a submerged plant, Ceratophyllum demersum, under the same environmental conditions to understand the differences in nutrient uptake by these different plant forms. The total nitrogen and phosphorus in the water decreased in the following order: Water Only < Water + Soil < Floating Plants ${\approx}$ Submerged Plants and Water Only < Water+Soil < Floating Plants < Submerged Plants. Nitrogen and phosphorous concentrations increased in both plants; however, the phosphorous concentration was greater in C. demersum than E. crassipes. The submerged plant exhibited higher phosphorus uptake per unit biomass than the floating plant, but nitrogen uptake did not differ significantly. These results suggest that the presence of soil influences nitrogen and phosphorus removal from water, and that wetland plants play an important role in the assimilation and precipitation of phosphorus. Understanding the differences in contaminant removal performance and characteristics of various plant forms can help in the selection of diverse plants for constructed wetlands to improve water quality and provide ecosystem services such as wildlife habitat and landscape enhancement.

• International Journal of Ocean System Engineering
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• v.1 no.3
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• pp.171-179
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• 2011

This paper presents the concept design procedure of a floating-type combined renewable energy platform based on hydrodynamic analyses and is focused on the fatigue design of taut-type mooring lines of the platform. Two types of combined renewable energy platforms are considered: a combination of wind turbine, wave turbine and photovoltaic energy plant and a combination of wind turbine, current turbine and photovoltaic energy plant. The basic configurations are conceptually determined from the understanding of floating offshore plants, while the main dimensions have been determined based on a hydrostatic calculation. Fully coupled hydrodynamic analyses have been carried out to identify the motion characteristics of the floating body and the tension histories of the mooring lines. The tension history is used for the fatigue life prediction based on the rain-flow cycle counting method. For the fatigue life prediction, tension life curves from API and the Palmgren-Miner rule are employed.

• Structural Engineering and Mechanics
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• v.83 no.1
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• pp.53-66
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• 2022

The main objective of the present research was investigating the effects of a floating wave barrier installed in front of an offshore jacket structure on the wave height, base shear, and overturning moment. A jacket model with the height of 4.55 m was fabricated and tested in the 402 m-long wave flume of NIMALA marine laboratory. The jacket was tested at the water depth of 4 m subjected to the random waves with a JONSWAP energy spectrum. Three input wave heights were chosen for the tests: 20 cm, 23 cm, and 28 cm. Two different cross sections with the same area were selected for the wave barrier: square and rhombus. Results showed that the average decrease in the jacket's base shear due to the presence of a floating wave barrier with square and rhombus cross section was 24.67% and 34.29%, respectively. The use of wave barriers with square and rhombus cross sections also resulted in 19.78% and 33.11% decrease in the jacket's overturning moment, respectively. Hence, it can be concluded that a floating wave barrier can significantly reduce the base shear and overturning moment in an offshore jacket structure; and a rhombus cross section is more effective than an equivalent square section.

• ETRI Journal
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• v.17 no.4
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• pp.1-12
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• 1996

A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current ($I_{DS}-V_{DS}$) curves, substrate resistance effect on the $I_{DS}-V_{DS}$ curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.

• Journal of the Society of Naval Architects of Korea
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• v.30 no.2
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• pp.43-53
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• 1993

There exist two difficulties in the nonlinear wave-body problems. First is the abrupt behavior near the intersection point between the body and the free surface, and second is the far field treatment. In this paper, the far field treatment is considered. The main idea is the Taylor series expansion of free-surface geometry and the application of F.F.T. algorithm. The numerical step is as follows. The velocity potential is expressed by the Green's theorem. and the solution is obtained by iteration method. In the iteration stage, the expressions by the Green's theorem are transformed to the convolution forts with the expansion of free surface by the wave slope. Here F.F.T. is applied, so the computing time can be of O(Nlog N) where N is the number of unknowns. The numerical analysis is carried out and the results are compared with other results in linear floating body problem and nonlinear moving pressure patch problem, and good agreements are obtained. Finally nonlinear floating body radiation problem is carried out with computing time of O(Nlog N).

• Journal of IKEEE
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• v.25 no.1
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• pp.15-24
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• 2021

In this paper, 1700 V EPDT (Extended P+ shielding floating gate Double Trench) MOSFET structure, which has a smaller switching time and loss than CDT (Conventional Double Trench) MOSFET, is proposed. The proposed EPDT MOSFET structure extended the P+ shielding area of the source trench in the CDT MOSFET structure and divided the gate into N+ and floating P- polysilicon gate. By comparing the two structures through Sentaurus TCAD simulation, the on-resistance was almost unchanged, but Crss (Gate-Drain Capacitance) decreased by 32.54 % and 65.5 %, when 0 V and 7 V was applied to the gate respectively. Therefore, the switching time and loss were reduced by 45 %, 32.6 % respectively, which shows that switching performance was greatly improved.

• Journal of IKEEE
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• v.17 no.2
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• pp.208-213
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• 2013

In this paper, we proposed the novel SCR-based ESD protection circuit with high holding voltage for power clamp. In order to increase the holding voltage, the floating p+ and n+ to n-well and p-well, respectively, in the conventional SCR. The resulting increase of the holding voltage of the our proposed ESD circuit enables the high latch-up immunity. The electrical characteristics including ESD robustness of the proposed ESD circuit have been simulated using Synopsys TCAD simulator. According to the simulation result, the proposed device has higher holding voltage of 4.98 V than that of the conventional SCR protection circuit. Moreover, it is confirmed that the device could have the holding voltage of maximum 13.26 V with the size variation of floated diffusion area.

• Proceedings of the KSEEG Conference
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• 2001.05a
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• pp.66-70
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• 2001

Recently, mega-float offshore structure is studied as one of the effective utilization of the ocean space. And mega-structure are now being considered for various applications such as floating airports, offshore cities and so on. This mega-float structure is relatively flexible compared with real floating structures like large ships. when we estimate dynamic responses of these structures in waves, the elastic deformation is important, because vertical dimension is small compared with horizontal. The analysis of the dynamic response as it receives regular wave is studied. The finite element method is used in the analysis of structural section of this model. And the analysis is carried out using the boundary element method in the fluid division. In order to know the characteristics of the dynamic response of the mega-float structures, effects of wavelength, water depth, and wave direction on dynamic response of the floating structure are studied by use of numerical calculation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.17-22
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• 2001

The floating-gate MOSFETs were fabricated by employing 1.5 m n-well CMOS process and their optical-electrical properties were characterized for the application to CMOS image sensor system. Based on the simulation of energy band diagram and operating mechanism of parasitic BJT were proposed as solutions for the increase of photo-current value. In order to realize them, MOSFETs having multi-gate and channel structures were fabricated and 60% increase in photo-current was achieved through enlargement of depletion layer and parallel connection of parasitic BJTs by channel division.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.168-171
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• 2003

$YMnO_{3}$ single crystals have been grown by a floating zone technique and the optimal growth conditions were investigated. Their crystallinity and microstructure were characterized by the chemical etch pit patterns, their distribution and the compositional difference depending on the G value. In particular, the microstructural feature was interpreted in terms of compositional deviation along radial direction on (1010) growth plane.