• 제목/요약/키워드: Flexible TFTs

검색결과 92건 처리시간 0.059초

Effects of Simultaneous Bending and Heating on Characteristics of Flexible Organic Thin Film Transistors

  • Cho, S.W.;Kim, D.I.;Lee, N.E.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.470-470
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    • 2013
  • Recently, active materials such as amorphous silicon (a-Si), poly crystalline silicon (poly-Si), transition metal oxide semiconductors (TMO), and organic semiconductors have been demonstrated for flexible electronics. In order to apply flexible devices on the polymer substrates, all layers should require the characteristic of flexibility as well as the low temperature process. Especially, pentacene thin film transistors (TFTs) have been investigated for probable use in low-cost, large-area, flexible electronic applications such as radio frequency identification (RFID) tags, smart cards, display backplane driver circuits, and sensors. Since pentacene TFTs were studied, their electrical characteristics with varying single variable such as strain, humidity, and temperature have been reported by various groups, which must preferentially be performed in the flexible electronics. For example, the channel mobility of pentacene organic TFTs mainly led to change in device performance under mechanical deformation. While some electrical characteristics like carrier mobility and concentration of organic TFTs were significantly changed at the different temperature. However, there is no study concerning multivariable. Devices actually worked in many different kinds of the environment such as thermal, light, mechanical bending, humidity and various gases. For commercialization, not fewer than two variables of mechanism analysis have to be investigated. Analyzing the phenomenon of shifted characteristics under the change of multivariable may be able to be the importance with developing improved dielectric and encapsulation layer materials. In this study, we have fabricated flexible pentacene TFTs on polymer substrates and observed electrical characteristics of pentacene TFTs exposed to tensile and compressive strains at the different values of temperature like room temperature (RT), 40, 50, $60^{\circ}C$. Effects of bending and heating on the device performance of pentacene TFT will be discussed in detail.

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산화물 반도체 Flexible Display 소자 제작을 위한 Laser 가공 특성 연구 (Study on Laser irradiation characteristics for Oxide TFTs on Flexible Substrate)

  • 손혁;이공수;정한욱;김광열;최영덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.203-203
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    • 2009
  • Low temperature annealing for oxide TFTs including IGZO on PI substrate is the essential process to fabricate flexible display devices, since low heat-resistance on PI and PEN substrates limits the temperature range. Laser annealing is one of the promising candidates for low temperature process, and it has been used for various application in semiconductor and LCD fabrication. We irradiated laser to solution-based IGZO thin films on PI substrate were irradiated to laser beam, and investigated laser damage of PI layer. Based on transmittance analysis, wavelength(532nm) and scan speed(1000mm/s) is the optimized condition for laser irradiation about ink-Jet printed oxide TFTs on PI substrates.

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Silicon Thin-Film Transistors on Flexible Polymer Foil Substrates

  • Cheng, I-Chun;Chen, Jian Z.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1455-1458
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    • 2008
  • Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are fabricated on flexible organic polymer foil substrates. As-fabricated performance, electrical bias-stability at elevated temperatures, electrical response under mechanical flexing, and prolonged mechanical stability of the TFTs are studied. TFTs made on plastic at ultra low process temperatures of $150^{\circ}C$ show initial electrical performance like TFTs made on glass but large gate-bias stress instability. An abnormal saturation of the instability against operation temperature is observed.

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Flexible Display용 Low Temp Process를 이용한 ZnO TFT의 제작 및 특성 평가 (Fabrication and Characteristics of ZnO TFTs for Flexible Display using Low Temp Process)

  • 김영수;강민호;남동호;최광일;오재섭;송명호;이희덕;이가원
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.44-44
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    • 2009
  • Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO channel layers(ZnO TFTs) having different channel thicknesses. The ZnO film were deposited as active channel layers on $Si_3N_4/Ti/SiO_2p$-Si substrates by rf magnetron sputtering at $100\;^{\circ}C$ without additional annealing. Also the Zno thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film were deposited as gate insulator by PE-CVD at $15\;^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method.

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The Dependence of Mechanical Strain on a-Si:H TFTs and Metal Connection Fabricated on Flexible Substrate

  • Lee, M.H.;Ho, K.Y.;Chen, P.C.;Cheng, C.C;Yeh, Y.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.439-442
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    • 2006
  • We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of $160^{\circ}C$ with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of $10\;{\mu}m$ for connection on flexible substrate can sustain with curvature radius 2.5 cm.

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TFT Technology for Flexible Display Applications

  • Kim, Chang-Dong;Kang, In-Byeong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1767-1770
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    • 2007
  • The key development issues in the flexible displays are TFT backplane technology for their various applications, which requires competitive device performance as well as its low temperature process. In this paper, with shortly reviewing recent flexible display development status, we describe technical trends of low-temperature a-Si TFTs. Our TFTs show good device characteristics enough to apply LCD and electrophoretic display.

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Polysilicon Thin Film Transistors on spin-coated Polyimide layer for flexible electronics

  • Pecora, A.;Maiolo, L.;Cuscuna, M.;Simeone, D.;Minotti, A.;Mariucci, L.;Fortunato, G.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.261-264
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    • 2007
  • We developed a non self-aligned poly-silicon TFTs fabrication process at two different temperatures on spin-coated polyimide layer above Si-wafer. After TFTs fabrication, the polyimide layer was mechanically released from the Si-wafer and the devices characteristics were compared. In addition self-heating and hot-carrier induced instabilities were analysed.

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Oxide/Organic Hybrid TFTs for Flexible Devices

  • Yang, Shin-Hyuk;Cho, Doo-Hee;KoPark, Sang-Hee;Lee, Jeong-Ik;Cheong, Woo-Seok;Yoon, Sung-Min;Ryu, Min-Ki;Byun, Chun-Won;Kwon, Oh-Sang;Cho, Kyoung-Ik;Chu, Hye-Yong;Hwang, Chi-Sun;Ahn, Taek;Choi, Yoo-Jeong;Yi, Mi-Hye;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.393-395
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    • 2009
  • We fabricated oxide and oxide/organic hybrid TFTs on a glass substrate using the photolithography process under $200^{\circ}C$. We adopt the solution processed organic ferroelectric materials of P(VDF-TrFE) and polyimide (KSPI) insulator for 1-T structure memory and flexible device, respectively. All devices have successfully operated and showed the possibility of hybrid TFTs for the application to the flexible electronic devices.

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$SiN_x$/고분자 이중층 게이트 유전체를 가진 Zinc 산화물 박막 트랜지스터의 저온 공정에 관한 연구 (Study on the Low-temperature process of zinc oxide thin-film transistors with $SiN_x$/Polymer bilayer gate dielectrics)

  • 이호원;양진우;형건우;박재훈;구자룡;조이식;권상직;김우영;김영관
    • 한국응용과학기술학회지
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    • 제27권2호
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    • pp.137-143
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    • 2010
  • Oxide semiconductors Thin-film transistors are an exemplified one owing to its excellent ambient stability and optical transparency. In particular zinc oxide (ZnO) has been reported because It has stability in air, a high electron mobility, transparency and low light sensitivity, compared to any other materials. For this reasons, ZnO TFTs have been studied actively. Furthermore, we expected that would be satisfy the demands of flexible display in new generation. In order to do that, ZnO TFTs must be fabricated that flexible substrate can sustain operating temperature. So, In this paper we have studied low-temperature process of zinc oxide(ZnO) thin-film transistors (TFTs) based on silicon nitride ($SiN_x$)/cross-linked poly-vinylphenol (C-PVP) as gate dielectric. TFTs based on oxide fabricated by Low-temperature process were similar to electrical characteristics in comparison to conventional TFTs. These results were in comparison to device with $SiN_x$/low-temperature C-PVP or $SiN_x$/conventional C-PVP. The ZnO TFTs fabricated by low-temperature process exhibited a field-effect mobility of $0.205\;cm^2/Vs$, a thresholdvoltage of 13.56 V and an on/off ratio of $5.73{\times}10^6$. As a result, We applied experimental for flexible PET substrate and showed that can be used to ZnO TFTs for flexible application.

Flexible Display용 Low Temp Process를 이용한 ZnO TFT의 제작 및 특성 평가 (Fabrication and Characteristics of ZnO TFTs for Flexible Display using Low Temp Process)

  • 김영수;강민호;남동호;최광일;이희덕;이가원
    • 한국전기전자재료학회논문지
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    • 제22권10호
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    • pp.821-825
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    • 2009
  • Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.