• 제목/요약/키워드: Flexible Electronic Device

검색결과 168건 처리시간 0.031초

ESAF의 기폭 신뢰성 향상을 위한 충격감지장치 연구 (A Study on the Impact Sensing Device for Improving the Firing Function Reliability of ESAF)

  • 조세영
    • 한국군사과학기술학회지
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    • 제18권5호
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    • pp.525-531
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    • 2015
  • In this paper, a novel impact sensing device for an ESAF(Electronic Safe and Arming Fuze) is presented. An impact sensing device is mounted in front of a weapon, and it detects an impact when it crashes against a target. There are two main design requirements to enhance the firing functional reliability of the ESAF; an operational reliability and a reduced latency, which is a delay time needed for sensing the impact. The design method of the contact-type impact sensing device, which employs an FPCB(Flexible Printed Circuit Board) so it can be used other weapons, is proposed. The tests demonstrated that the design described in this work show a reduced delay time with ensuring the operational reliability.

What Is the Key Vacuum Technology for OLED Manufacturing Process?

  • 백충렬
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.95-95
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    • 2014
  • An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

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유연한 플라스틱 기판 위에서의 ZnO 나노선 FET소자의 전기적 특성 (Electrical characteristics of a ZnO nanowire-based Field Effect Transistor on a flexible plastic substrate)

  • 강정민;김기현;윤창준;염동혁;정동영;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.149-150
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    • 2006
  • A ZnO nanowire-based FET is fabricated m this study on a flexible substrate of PES. For the flat and bent flexible substrates, the current ($I_D$) versus drain-source bias voltage ($V_{DS}$) and $I_D$ versus gate voltage ($V_G$) results are compared. The flat band was Ion/Ioff ratio of ${\sim}10^7$, a transconductance of 179 nS and a mobility of ~10.104 cm2/Vs at $V_{DS}$ =1 V. Also bent to a radius curvature of 0.15cm and experienced by an approximately strain of 0.77 % are exhibited an Ion/Ioff ratio of ${\sim}10^7$, a transconductance of ~179 nS and a mobility of ${\sim}10.10 cm^2/Vs$ at $V_{DS}$ = 1V. The electrical characteristics of the FET are not changed very much. although the large strain is given on the device m the bent state.

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유연성 기판위에 스퍼터링 방법으로 증착한 CdS 박막의 전기적 특성 및 신뢰성 평가 (Electrical Properties and Reliability of CdS Thin Film Deposited by R.F. Sputtering)

  • 허성기;황미나;안준구;윤순길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.26-26
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    • 2010
  • Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2(Ar+H_2)$ flow ratios on polyethersulfon(PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7{\times}10^5{\Omega}$/square, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.

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Electronic Paper Device 적용을 위한 $TiO_2$ 나노입자의 폴리머 Encapsulation (Polymer Encapsulation of $TiO_2$ Nanoparticle for Electronic Paper Device)

  • 권순형;김세기;홍완식;안진호;김선재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.991-994
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    • 2003
  • Electronic Paper용 무기소재로 $TiO_2$ 나노입자를 적용하기 위해서는 분산시 침전문제, 입자의 전기영동 속도향상을 위한 충분한 $\xi-potential$확보, 분산제 첨가시 안정적 결합을 위한 acidic site의 확보등의 문제가 해결되어야 한다. 이를 위해 저온균일침전법으로 $TiO_2$ 나노입자를 제조하였고, 폴리머 체인을 통하여 encapsulation하여 최적의 분산과 전기영동조건 확보를 위한 공정조건에 대해 연구하였다. 실험결과 다양한 분산매에 계면활성제를 1.0wt% 첨가시 유전율상수가 2.5인 분산매에서 가장 좋은 $\xi-potential$을 얻을 수 있었으며 이를 바탕으로 acidic site에 따른 폴리머 체인의 흡착실험 결과 pH $1{\sim}2$의 조건에서 제조된 $TiO_2$ 나노입자의 경우가 체인과의 흡착정도가 가장 좋아 분산특성을 향상시킬 수 있었다.

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미용/의료용 유연 마이크로 발광 다이오드 디바이스 제작 공정 (Fabrication of Flexible Micro LED for Beauty/Biomedical Applications)

  • 이재희
    • 한국전기전자재료학회논문지
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    • 제36권6호
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    • pp.563-569
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    • 2023
  • 마이크로 발광다이오드(LED)는 칩 사이즈가 100마이크로미터 이하인 무기발광재료로 우수한 전기적, 광학적, 기계적 성능 때문에 유연 디스플레이, AR/VR, 바이오 메디컬 분야의 차세대 광원으로 큰 주목을 받고 있다. 특히, 바이오메디컬 분야에 적용하기 위해서는 매우 작은 크기의 마이크로 LED 칩을 원하는 유연 기판에 옮기기 위한 기술이 요구되며, 실제 인간의 얼굴, 장기 등 여러 신체 부위에 적용하기 위해서는 대량의 마이크로 LED 칩을 낮은 정밀 오차, 빠른 속도, 높은 수율로 타겟 기판에 전사하는 것이 중요하다. 본 논문의 목적은 미용/의료용 유연 마이크로 LED 디바이스 제작 공정 방법을 소개하고, 이를 실제 미용/의료 산업에 적용하기 위해 필요한 마이크로 LED 전사 기술을 소개한다. 해당 기술로 제작된 유연 마이크로 LED 디바이스는 피부 질환, 암, 신경질환 등 인간 질병 치료에 널리 활용될 것으로 기대된다.

PES 기판 위에 증착된 Mg0.3Zn0.7O 박막의 산소압에 따른 구조 및 광학적 특성 (The Structural and Optical Characteristics of Mg0.3Zn0.7O Thin Films Deposited on PES Substrate According to Oxygen Pressure)

  • 이현민;김상현;장낙원;김홍승
    • 한국전기전자재료학회논문지
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    • 제27권11호
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    • pp.760-765
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    • 2014
  • MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, the crystal structure of the thin films as well as the surface morphology is not good. Therefore, in this study, we studied on the effects of the oxygen pressure on the structure and crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films deposited on PES substrate by using pulsed laser deposition. We used X-ray diffraction and atomic force microscopy in order to observe the structural characteristics of $Mg_{0.3}Zn_{0.7}O$ thin films. The crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films with increasing temperature was improved, Grain size and RMS of the films were increased. UV-visible spectrophotometer was used to get the band gap energy and transmittance. $Mg_{0.3}Zn_{0.7}O$ thin films showed high transmittance over 90% in the visible region. As increased working pressure from 30 mTorr to 200 mTorr, the bandgap energy of $Mg_{0.3}Zn_{0.7}O$ thin film were decreased from 3.59 eV to 3.50 eV.

저온 공정 PVP게이트 절연체를 이용한 고성능 플렉서블 유기박막 트랜지스터의 계면처리 효과 (Interface Treatment Effect of High Performance Flexible Organic Thin Film Transistor (OTFT) Using PVP Gate Dielectric in Low Temperature)

  • 윤호진;백규하;신홍식;이가원;이희덕;도이미
    • 한국전기전자재료학회논문지
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    • 제24권1호
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    • pp.12-16
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    • 2011
  • In this study, we fabricated the flexible pentacene TFTs with the polymer gate dielectric and contact printing method by using the silver nano particle ink as a source/drain material on plastic substrate. In this experiment, to lower the cross-linking temperature of the PVP gate dielectric, UV-Ozone treatment has been used and the process temperature is lowered to $90^{\circ}C$ and the surface is optimized by various treatment to improve device characteristics. We tried various surface treatments; $O_2$ Plasma, hexamethyl-disilazane (HMDS) and octadecyltrichlorosilane (OTS) treatment methods of gate dielectric/semiconductor interface, which reduces trap states such as -OH group and grain boundary in order to improve the OTFTs properties. The optimized OTFT shows the device performance with field effect mobility, on/off current ratio, and the sub-threshold slope were extracted as $0.63cm^2 V^{-1}s^{-1}$, $1.7{\times}10^{-6}$, and of 0.75 V/decade, respectively.

Carbon Nanotube의 첨가에 의한 PZT/PVDF 압전소자의 상전이와 출력 효율 개선 (Phase Transition and Improvement of Output Efficiency of the PZT/PVDF Piezoelectric Device by Adding Carbon Nanotubes)

  • 임영택;이선우
    • 한국전기전자재료학회논문지
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    • 제31권2호
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    • pp.94-97
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    • 2018
  • Lead zirconate titanate/poly-vinylidene fluoride (PZT/PVDF) piezoelectric devices were fabricated by incorporating carbon nanotubes (CNTs), for use as flexible energy harvesting devices. CNTs were added to maximize the formation of the ${\beta}$ phase of PVDF to enhance the piezoelectricity of the devices. The phase transition of PVDF induced by the addition of CNTs was confirmed by analyzing the X-ray diffraction patterns, scanning electron microscopy images, and atomic force microscopy images. The enhanced output efficiency of the PZT/PVDF piezoelectric devices was confirmed by measuring the output current and voltage of the fabricated devices. The maximum output current and voltage of the PZT/PVDF piezoelectric devices was 200 nA and 350 mV, respectively, upon incorporation of 0.06 wt% CNTs.

UPFC Device: Optimal Location and Parameter Setting to Reduce Losses in Electric-Power Systems Using a Genetic-algorithm Method

  • Mezaache, Mohamed;Chikhi, Khaled;Fetha, Cherif
    • Transactions on Electrical and Electronic Materials
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    • 제17권1호
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    • pp.1-6
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    • 2016
  • Ensuring the secure operation of power systems has become an important and critical matter during the present time, along with the development of large, complex and load-increasing systems. Security constraints such as the thermal limits of transmission lines and bus-voltage limits must be satisfied under all of a system’s operational conditions. An alternative solution to improve the security of a power system is the employment of Flexible Alternating-Current Transmission Systems (FACTS). FACTS devices can reduce the flows of heavily loaded lines, maintain the bus voltages at desired levels, and improve the stability of a power network. The Unified Power Flow Controller (UPFC) is a versatile FACTS device that can independently or simultaneously control the active power, the reactive power and the bus voltage; however, to achieve such functionality, it is very important to determine the optimal location of the UPFC device, with the appropriate parameter setting, in the power system. In this paper, a genetic algorithm (GA) method is applied to determine the optimal location of the UPFC device in a network for the enhancement of the power-system loadability and the minimization of the active power loss in the transmission line. To verify our approach, simulations were performed on the IEEE 14 Bus, 30 Bus, and 57 Bus test systems. The proposed work was implemented in the MATLAB platform.