• 대한전자공학회논문지SD
• /
• 제43권3호
• /
• pp.1-8
• /
• 2006

본 논문에서는 채널 stress에 따른 Nano-scale CMOSFET의 소자 및 신뢰성 (HCI, NBTI)특성을 분석하였다. 잘 알려져 있듯이 NMOS는 tensile, PMOS는 compressive stress가 인가된 경우에 소자의 특성이 개선되었으며, 이는 전자와 정공의 이동도 증가에 의한 것임을 확인하였다. 그러나 신뢰성인 경우에는 소자 특성과는 다른 특성을 나타냈는데, NMOS와 PMOS 모두 tensile stress가 인가된 경우에 hot carrier 특성이 더 열화 되었으며, PMOS의 PBTI 특성도 tensile에서 더 열화 되었음을 확인하였다. 신뢰성을 분석한 결과, 채널의 tensile stress로 인하여 $Si/SiO_2$ 계면에서 interface trap charge의 생성과 산화막 내 positive fixed charge의 생성에 많은 영향을 끼침을 알 수 있었다. 그러므로 나노급 CMOSFET에 적용되는 strained-silicon MOSFET의 개발을 위해서는 소자의 성능 뿐 만 아니라 신뢰성 또한 고려되어야 한다.

• 한국병원경영학회지
• /
• 제14권3호
• /
• pp.23-48
• /
• 2009

The purpose of this study was to provide criteria which help executives to make decisions through the analysis of profitability of ultrasonography conducted in each medical department. In order to achieve such purpose, the study conducted break-even analyses on three medical departments of a university hospital in which has used ultrasonography was largely conducted in diagnosing diseases and performing surgeries. The research was carried out from January to June 2008. The data necessary for calculating cost, were collected using by computerized data. The results of the study were summarized as follows. 1. The Cost structure of each medical department: The Cost of ultrasonography was divided into direct cost and indirect cost through the categorization by cost object. Labor cost accounted for the largest portion of the direct cost with 69.3% in the department of obstetrics and gynecology, 67.4% in the department of radiology and 58.2% in the cardiac ultrasonography center, which followed by the depreciation cost of ultrasonography equipment. The calculation of the average material cost of each ultrasonographic test by medical test found that the cardiac ultrasonography center took first place with 2,355 won, followed by the department of obstetrics and gynecology with 266 won and the department of radiology with 233 won. As for the power cost of ultrasonography equipment, the department of radiology took fist place with 442,000 won. The power cost, however, did not affect much the cost price, because it accounted for only a small portion of the cost. As for indirect cost, the cardiac ultrasonography center ranked first with 7,156,000 won. Building depreciation cost accounted for the largest portion of the indirect cost. 2. Break-even analysis: Under the supposition that cost price can be divided into fixed cost and variable cost, a break-even analysis was conducted using the cost price confirmed through the cost structure of each medical department. As for the average customary charge of ultrasonography test conducted in each medical department, the department of obstetrics and gynecology charged 24,627 won, the department of radiology 53,179 won and the cardiac ultrasonography center 65,174 won. According to these results, the charges of ultrasonography test imposed by the department of radiology and the cardiac ultrasonography center wre enough to surpass break-even levels, but the charge imposed by the department of obstetrics and gynecology was not enough to offset the cost price. In conclusion, labor cost accounted for the largest proportion of cost price of ultrasonography test conducted in diagnosing diseases and performing surgeries in medical departments, followed by the fixed cost of ultrasonographic equipment depreciation cost. In medical department where the current charge of ultrasonography test turned out not to offset cost price through the break-even analysis of ultrasonographic equipment, ways to reduce fixed cost which accounts for the largest proportion of the cost price should be sought. Even medical departments whose current charge of ultrasonography test is enough to surpass break-even level are required to work for efficient management and cost reduction to continuously generate profits.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
• /
• pp.94-94
• /
• 2009

최근 실리콘 태양전지는 점점 얇아 지는 추세에 있다. 실리콘 태양전지에 있어 실리콘의 두께를 감소시키는 것은 실리콘 소모량을 줄이는데 있어 필수적인 조건이 되었다. 이에 따라 실리콘 표면의 passivation도 더욱 중요하게 여겨지고 있다. 실리콘 태양전지의 passivation막의 한 종류인 $Al_2O_3$는 다른 산화막 물질들과는 달리 negative fixed charge를 가지고 있고 charge의 양이 다른 산화막의 density보다 높아 p-type 실리콘의 경우 후면 passivation막으로 이용이 고려되고 있다. 본 연구에서는 atomic layer deposition으로 $Al_2O_3$막을 실리콘 위에 증착하여 열처리에 따른 그 특성을 비교하고 태양전지를 제작하였다. $Al_2O_3$막을 rapid thermal annealing을 통해 서로 다른 분위기에서 열처리 한 결과를 capacitance-voltage를 통해 측정하여 비교, 분석하였고 ellipsomety 분석을 통해 광학적 특성을 비교하였다. 또한 열처리 온도의 변화에 따른 $Al_2O_3$내에 charge에 변화가 있다는 것을 관찰하였다. 이러한 charge의 변화가 태양전지의 passivation에 영향을 주는지 관찰하기 위해 Quasi-steady state photoconductace를 통해 lifetime의 변화를 관찰 하였다. 이러한 실험결과로부터 열처리 분위기와 온도를 최적화 하여 태양전지 passivation 특성을 증가시킬 수 있었다.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2004년도 춘계학술대회
• /
• pp.1322-1327
• /
• 2004

In the present work, a series of experiments have been performed on electro-hydrodynamic atomization of non-conducting liquid using a charge injection type nozzle. Effects of liquid flow rate, input voltage, and distance between the needle and the ground electrode (nozzle-embedded metal plate) have been examined. For fixed electrode distances, total and spray currents increase with increase of liquid flow rate and input voltage. When the distance between the needle and the ground electrode becomes closer, total, leakage and spray current increase, but the onset voltage for dielectric breakdown decreases. When the electric field strength of the liquid jet exceeds that for the air breakdown, a portion of the electric charges in the liquid jet is dissipated into the ambient air, and the charge density shows a limiting value. Atomization quality can be improved by increasing the flow rate because the higher charge density is achieved with the larger liquid velocity in addition to the enhanced aerodynamic effect.

• 한국항만학회지
• /
• 제3권1호
• /
• pp.3-33
• /
• 1989

The amount of the Korean export & import in 1987 reached $88.3 billion which was 1.75% of the total world trade and the proportion of foreign dependence to G.N.P was 74.5%. From these facts, we can infer that the development of national economy is largely dependent upon trade. Therefore the role of transportation, especially Ocean transportation, as a basis of economic development through trade is one of the main factors that can not be passed over. Here, We can define that a port as a subsystem of transportation determines the efficiency of the total transportation system. Thus, the purpose of this paper is to contribute in improvement of the efficiency in port, reinforcement of the international competitiveness for exporting goods by the analysis of the cargo handling charges. In order to do this, this paper deals the case of B.C.T.O.C. Furthermore, this study gives some important informations related to the level of tariffs for establishing an autonomous port administration. The Summary of the conclusions of this paper is as follows ; 1) The object of port administration in Korea has been emphasized on the maximization of efficiency in using the port facilities. Nowadays, however, it should be moved to a direction that port is operated under the compound aims considering the public interests and economy. 2) For a criterian of tariff calculation, A tariff system based on the cost accounting is desirable. In general it is recommended that the cost for construction, management, and operation of port is compensated by the revenue from port operation. Therefore, it is necessary for the administration bodies of each port to establish a tariff system on the basis of the independent profit system. 3) For the investigation of actors of tariff adjustment by the Break-even point analysis, (1) When we conducted the B.E.P analysis using total cost as cost term, we got 3.8% discount in tariff at 12% of target profit rate and 1.5% discount at 15% of rate. when we set the target profit rate as 17% we could have the proper tariff level. (2) When using operating cost as cost term, we got 13.1% discount in tariff at 12% of target profit rate and 10.9% discount at 15% of rate. When setting the target profit rat as 28%, we could have the proper tariff level. 4) Comparing with the tariffs of foreign ports for the basic terminal rate, The tariff level of B.C.T.O.C showed 33% of stevedoring charge and 80% of marshalling charge incurred at Kobe port. The comparison with Singapore port gave 50% of transhipment charge and 17% - 20 % of stevedoring charge. 5) We found that the financial structure of B.C.T.O.C was better than those of other companies and the worth fixed assets ratio was too low. The fact of low worth fixed assets ratio implies that the cargo handling facilities should be increased. Moreover, The return of assets for B.T.T.O.C was good but non-operating expenses were still contained too much in. Therefore, we think that it is necessary for B.C.T.O.C. to rationalize business management. Although the present cargo handing charge for B.C.T.O.C is a proper level in terms of a public corporation, for the final recommendation in connection to the results, It is required to take the rationalization process for business management.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1992년도 하계학술대회 논문집 B
• /
• pp.829-831
• /
• 1992

Ultrathin metal-oxide-semiconductor(MOS) gate dielectrics have been fabricated by conventional thermal oxidation in $N_2O$ ambient. Compared to oxides grown in $O_2$, $N_2O$ oxides exhibit significantly low flatband voltage and small shift in flatband voltage. $N_2O$ oxidation induces a slight decrease in mobile ionic charge density($N_m$), fixed charge density($N_f$) and surface state charge density($N_{ss}$). This study establishes that $N_2O$ oxides may have a great impact on future MOS ULSI technology in which ultrathin gate dielectrics are required.

• 대한전자공학회논문지
• /
• 제26권11호
• /
• pp.1666-1671
• /
• 1989

A novel switched-capacitor circuit for interfacing capacitive microtransducers with a digital system is developed based on the dual-slope integration. It consists of a differential integrator and a comparator. Driven by the teo phase clock, the circuit first senses the capacitance difference between the transducer and the reference capacitor in the form of charge, and accumulates it into the feedback capabitor of the integrator for a fixed period of time. The resulant accumulated charge is next extracted by the known reference charge until the integrator output voltage refurns to zero. The length of time required for the integrator output to return to zero, as measured by the number of clock cycle gated into a counter is proportional to the capacitance difference, averaged over the integration period. The whole operation is insensitive to the reference voltage and the capacitor values involved in the circuit, Thus the proposed circuit permits an accurate differental capacitance measurement. An error analysis has showh that the resolution as high as 8 bits can be expected by realizing the circuit in a monolithic MOS IC form. Besides the accuracy, it features the small device count integrable onto a small chip area. The circuit is thus particularly suitadble for the on-chip interface.

• Bulletin of the Korean Chemical Society
• /
• 제35권6호
• /
• pp.1799-1805
• /
• 2014

In this article, we described about the preparation and electrochemical properties of a flexible energy storage system based on a plastic polyethylene terephthalate (PET) substrate. The PET treated with UV/ozone was fabricated with multilayer films composed of 30 polyaniline (PANi)/graphene oxide (GO) bilayers using layer-by-layer assembly of positively charged PANi and negatively charged GO. The conversion of GO to the reduced graphene oxide (RGO) in the multilayer film was achieved using hydroiodic acid vapor at $100^{\circ}C$, whereby PANi structure remained nearly unchanged except a little reduction of doping state. Cyclic voltammetry and charge/discharge curves of 30 PANi/RGO bilayers on PET substrate (shorten to PANi-$RGO_{30}$/PET) exhibited an excellent volumetric capacitance, good cycling stability, and rapid charge/discharge rates despite no use of any metal current collectors. The specific capacitance from charge/discharge curve of the PANi-$RGO_{30}$/PET electrode was found to be $529F/cm^3$ at a current density of $3A/cm^3$, which is one of the best values yet achieved among carbon-based materials including conducting polymers. Furthermore, the intrinsic electrical resistance of the PANi-$RGO_{30}$/PET electrodes varied within 20% range during 200 bending cycles at a fixed bend radius of 2.2 mm, indicating the increase in their flexibility by a factor of 225 compared with the ITO/PET electrode.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.354-357
• /
• 2002

Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
• /
• pp.77-78
• /
• 2009

We report numerical simulations to investigate of the dependence of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of 10um, but varying the channel width W from 5nm to 5um, and thickness t from 10nm to 30nm. We have shown that $Q_{ON}/Q_{OFF}$ drastically decreases (from ${\sim}2.9{\times}10^4$ to ${\sim}9.8{\times}10^3$) as the channel thickness increases (from 10nm to 30nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed than that in the bottom of control channel.