• Title/Summary/Keyword: Film-forming

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Microstructure Control of Porous Ceramics by Freeze-Drying of Aqueous Slurry (동결건조공정을 이용한 다공성 세라믹스의 미세구조 제어)

  • 황해진;문지웅
    • Journal of the Korean Ceramic Society
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    • v.41 no.3
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    • pp.229-234
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    • 2004
  • In this study, we proposed new forming process for a porous ceramic body with unique pore structure. h tubular-type porous NiO-YSZ body with radially aligned pore channels was prepared by freeze-drying of aqueous slurry. A NiO-YSZ slurry was poured into the mold, which was designed to control the crystallization direction of the ice, followed by freezing. Thereafter the ice was sublimated at a reduced pressure. SEM observations revealed that the NiO-YSZ porous body showed aligned large pore channels parallel to the ice growth direction, and fine pores are formed around the outer surface of the tube. It was considered that the difference in the ice growth rate during the freezing process resulted in such a characteristic microstructure. Bilayer consisting of dense thin electrolyte film of YSZ onto the tubular type porous body has been successfully fabricated using a slurry-coating process followed by co-firing. It was regarded that the obtained bilayer structure is suitable for constructing electrode-support type electrochemical devices such as solid oxide fuel cells.

Control of Plasma Characteristic to Suppress Production of HSRS in SiH4/H2 Discharge for Growth of a-Si: H Using Global and PIC-MCC Simulation

  • Won, Im-Hui;Gwon, Hyeong-Cheol;Hong, Yong-Jun;Lee, Jae-Gu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.312-312
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    • 2011
  • In SiH4/H2 discharge for growth process of hydrogenated amorphous silicon (a-Si:H), silane polymers, produced by SiH2 + Sin-1H2n ${\rightarrow}$ SinH2n+2, have no reactivity on the film-growing surface. However, under the SiH2 rich condition, high silane reactive species (HSRS) can be produced by electron collision to silane polymers. HSRS, having relatively strong reactivity on the surface, can react with dangling bond and form Si-H2 networks which have a close correlation with photo-induced degradation of a-Si:H thin film solar cell [1]. To find contributions of suggested several external plasma conditions (pressure, frequency and ratio of mixture gas) [2,3] to suppressing productions of HSRS, some plasma characteristics are studied by numerical methods. For this study, a zero-dimensional global model for SiH4/H2 discharge and a one-dimensional particle-in-cell Monte-Carlo-collision model (PIC-MCC) for pure SiH4 discharge have been developed. Densities of important reactive species of SiH4/H2 discharge are observed by means of the global model, dealing 30 species and 136 reactions, and electron energy probability functions (EEPFs) of pure SiH4 discharge are obtained from the PIC-MCC model, containing 5 charged species and 15 reactions. Using global model, SiH2/SiH3 values were calculated when pressure and driving frequency vary from 0.1 Torr to 10 Torr, from 13.56 MHz to 60 MHz respectively and when the portion of hydrogen changes. Due to the limitation of global model, frequency effects can be explained by PIC-MCC model. Through PIC-MCC model for pure SiH4, EEPFs are obtained in the specific range responsible for forming SiH2 and SiH3: from 8.75 eV to 9.47 eV [4]. Through densities of reactive species and EEPFs, polymerization reactions and production of HSRS are discussed.

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Sustainable Development of Palm Oil: Synthesis and Electrochemical Performance of Corrosion Inhibitors

  • Porcayo-Calderon, J.;Rivera-Munoz, E.M.;Peza-Ledesma, C.;Casales-Diaz, M.;de la Escalera, L.M. Martinez;Canto, J.;Martinez-Gomez, L.
    • Journal of Electrochemical Science and Technology
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    • v.8 no.2
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    • pp.133-145
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    • 2017
  • Palm oil production is among the highest worldwide, and it has been mainly used in the food industry and other commodities. Currently, a lot of palm oil production has been destined for the synthesis of biodiesel; however, its use in applications other than the food industry has been questioned. Thereby for a sustainable development, in this paper the use of palm oil of low quality for corrosion inhibitors synthesis is proposed. The performance of the synthesized inhibitors was evaluated by using electrochemical techniques such as open circuit potential measurements, linear polarization resistance and electrochemical impedance spectroscopy. The results indicate that the fatty amides from palm oil are excellent corrosion inhibitors with protection efficiencies greater than 98%. Fatty amides molecules act as cathodic inhibitors decreasing the anodic dissolution of iron. When fatty amides are added, a rapid decrease in the corrosion rate occurs due to the rapid formation of a molecular film onto carbon steel surface. During the adsorption process of the inhibitor a self-organization of the hydrocarbon chains takes place forming a tightly packed hydrophobic film. These results demonstrate that the use of palm oil for the production of green inhibitors promises to be an excellent alternative for a sustainable use of the palm oil production.

Study on Low Temperature Formation of Ferroelectric $Sr_{0.9}4$Bi_{2.1}$$Ta_2$$O_9$ Thin Films by Sol-Gel Process and Rapid Thermal Annealing (솔-젤법 및 급속열처리에 의한 $Sr_{0.9}4$Bi_{2.1}$$Ta_2$$O_9$ 박막의 저온형성에 관한 연구)

  • 장현호;송석표;김병호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.4
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    • pp.312-317
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    • 2000
  • Ferroelectric S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions were synthesized using sol-gel process in which strontinum ethoxide bismuth ethoxide trantalum ethoxide were used a s startring materials. SBT thin films were coated on Pt/Ti/ $SiO_2$/Si substrates by spin-coating. rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed at $700^{\circ}C$ for 1 hr in an oxygen atmosphere. This temperature is about 10$0^{\circ}C$ lower than the usual annealing temperature for SBT thin films. Pt top-electrode was deposited by sputtering and thin films were post-annealed at $700^{\circ}C$ for 30 min. to enhance electrical properties. As the RTA temperature increased the higher 2 $P_{r}$ values were obtained. At RTA temperature being 78$0^{\circ}C$ remanent polarization of S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ thin film was 7.73 $\mu$C/cm $_2$ and the leakage current density was 1.14$\times$10$^{-7}$ A/c $m^2$ at 3 V. As RTA temperature increased the breakdown voltage was decreased. It is considered that the low-field breadown is caused by the rough surface of SBT films and forming bismuth metal in SBT thin films.films.lms.

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A study on microstructure, corrosion characteries and hardness of pure Ti according to cooling methods (생체용 순수 Ti 주조체의 냉각방법에 따른 주조조직과 부식특성 및 경도에 관한 연구)

  • Kim, Jae-Doo
    • Journal of Technologic Dentistry
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    • v.23 no.1
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    • pp.65-73
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    • 2001
  • The purpose of this study was to investigate the microstucture and hardness, corrosion of pure Ti alloy, which is widely used as partial denture frame work these days, depending on the cooling method, followed by casting. The first group was bench cooling at room temperature($18^{\circ}C$), the second group was slowly cooled in the furnace from $700^{\circ}C$ to room temperature, and third. rapidly cooled in $0^{\circ}C$ water. The microstructure of each specimen observed by means of photomicrograph taken by electron microscope, in add to the physical characteristics of each specimen were obtained using the rockwell Hardnest Number. the characteristics of corrosion. The results were obtained as follows: 1. From Potentiodynamic plot. we conclude furnace-cooled specimen had the best stabiltity of passive film and that air-cooled specimen showed similar characteristics. The density of electric current of quenched specimen was the highest, which formed kind of unstable passive film. 2. Specimen cooled at room temperature (air cooling) had the highest value of hardness of 81.26HRB, specimen cooled at ice-water, $0^{\circ}C$, had the value of 78.42HRB, and specimen furnace-cooled at $700^{\circ}C$ had lowest value of 77.1HRB. 3. Quenching treated micro-structure formed martensite structure by and large. In case of air cooling, we could see $\alpha$-structure widmanstatten formed overall. In furnace cooling, widmanstatten structure and various shape $\alpha$-structures forming colony with direction were detected.

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Study on Basic Characteristics of Hollow Piezoelectric Actuator for Driving Nanoscale Stamp (나노스템프 구동용 중공형 압전액추에이터 기본특성에 관한 연구)

  • Park, Jung-Ho;Lee, Hu-Seung;Lee, Jae-Jong;Yun, So-Nam;Ham, Young-Bog;Jang, Sung-Cheol
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.35 no.9
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    • pp.1015-1020
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    • 2011
  • Nanoimprint lithography has been actively investigated. This method can replicate a nanopatterned master stamp onto a thin polymer film on a silicon substrate and so on. In this study, a square-shaped hollow piezoelectric actuator is presented, which is newly developed. This actuator is used for driving a nanoscale stamp in nanoimprint lithography instead of a conventional electric motor. The fabricated prototype actuator has 95 layers and side lengths of 23 mm and 18 mm for the outer and inner squares, respectively. By adopting a novel process instead of the conventional forming process for fabricating a one-layer actuator, the one-layer is composed of four rectangular segments produced by sawing a ceramic film with a thickness of 0.3 mm. The basic characteristics on displacement and generation force of the fabricated prototype actuator are experimentally investigated. Furthermore, the displacement characteristics obtained by using a PI controller are tested and discussed.

Organic Memory Device Using Self-Assembled Monolayer of Nanoparticles (나노입자 자기조립 단일층을 이용한 유기메모리 소자)

  • Jung, Hunsang;Oh, Sewook;Kim, Yejin;Kim, Minkeun;Lee, Hyun Ho
    • Applied Chemistry for Engineering
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    • v.23 no.6
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    • pp.515-520
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    • 2012
  • In this review, the fabrication of silicon based memory capacitor and organic memory thin film transistors (TFTs) was discussed for their potential identification tag applications and biosensor applications. Metal or non-metal nanoparticles (NPs) could be capped with chemicals or biomolecules such as protein and oligo-DNA, and also be self-assembly monolayered on corresponding target biomolecules conjugated dielectric layers. The monolayered NPs were formed to be charging elements of a nano floating gate layer as forming organic memody deivces. In particular, the strong and selective binding events of the NPs through biomolecular interactions exhibited effective electrostatic phenomena in memory capacitors and TFTs formats. In addition, memory devices fabricated as organic thin film transistors (OTFTs) have been intensively introduced to facilitate organic electronics era on flexible substrates. The memory OTFTs could be applicable eventually to the development of new conceptual devices.

Improvement of Corrosion Resistance by Mg Films Deposited on Hot Dip Aluminized Steel using a Sputtering Method (용융알루미늄 도금 강판 상에 스퍼터링법으로 형성된 마그네슘 코팅막에 의한 내식성 향상)

  • Park, ae-Hyeok;Kim, Soon-Ho;Jeong, Jae-In;Yang, Ji-Hoon;Lee, Kyung-Hwang;Lee, Myeong-Hoon
    • Journal of Surface Science and Engineering
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    • v.51 no.4
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    • pp.224-230
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    • 2018
  • In this study, Mg films were prepared on hot dip aluminized steel (HDA) by using a sputtering method as a high corrosion resistance coating. The corrosion resistance of the Mg films was improved by controlling the morphology and the crystal structure of films by adjusting the Ar gas pressure during the coating process. Anodic polarization measurement results confirm that the corrosion resistance of the Mg films was affected by surface morphology and crystal structure. The corrosion resistance of the Mg coated HDA specimen increased with decreasing crystal size of the Mg coating and it was also improved by forming a film with denser morphology. The crystal structure oriented at Mg(101) plane showed the best corrosion resistance among crystal planes of the Mg metals, which is attributed to its relatively low surface energy. Neutral salt spray test confirmed that corrosion resistance of HDA can be greatly improved by Mg coating, which is superior to that of HDG (hot dip galvanized steel). The reason for the improvement of the corrosion resistance of Mg films on hot dip aluminized steel was due to the barrier effect by the Mg corrosion products formed by the corrosion of the Mg coating layer.

Fabrication and Characterization of Triboelectric Nanogenerator based on Porous Animal-collagen (다공성 동물성-콜라겐을 이용한 마찰전기 나노발전기 제작 및 특성평가)

  • Shenawar Ali Khan;Sheik Abdur Rahman;Woo Young Kim
    • Journal of the Korean Applied Science and Technology
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    • v.40 no.1
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    • pp.179-187
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    • 2023
  • Nanogenerators containing biomaterials are eco-friendly electronic devices in terms of being a non-polluting energy source and biodegradable electronic waste. In particular, the amount of waste will be also reduced if the biomaterial can be extracted from biowaste. In this study, a triboelectric nanogenerator was fabricated using animal collagen present in the skin of a mammal and its characteristion was proformed. The electro-anodic layer of the triboelectric nanogenerator was constructed by forming a collagen film using the spin coating method, and it was confirmed that the film was porous from scanning electron microscopy. The fabricated triboelectric nanogenerator exhibited an open-circuit voltage from 7 V at 3 Hz to 15 V at 5 Hz due to periodic mechanical movement, and a short-circuit current of 3.8 uA at 5 Hz. In conclusion, collagen-containing triboelectric nanogenerators can be power source for low-power operating devices such as sensors and are also expected to be useful for reducing electronic waste.

Reduction of Leakage Current and Enhancement of Dielectric Properties of Rutile-TiO2 Film Deposited by Plasma-Enhanced Atomic Lay er Deposition

  • Su Min Eun;Ji Hyeon Hwang;Byung Joon Choi
    • Korean Journal of Materials Research
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    • v.34 no.6
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    • pp.283-290
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    • 2024
  • The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO2 has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO2 on RuO2 with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO2 was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10-6 A/cm2 at 1 V, and an EOT at the 0.5 nm level was achieved.