• Transactions of the Korean Society of Mechanical Engineers B
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• v.22 no.9
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• pp.1195-1207
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• 1998

Periodic pulsations in the static pressure near turbine surfaces as blade rows move relative to each other is one of the important sources of turbine unsteadiness. The present experiment aims to investigate the effect of the static pressure pulsations on the interaction of film coolant flows from two rows of staggered holes with mainstream and its effect on film cooling heat transfer. Potential flow pulsations are generated by the rotating shutter mechanism installed downstream of the test section, The free-stream Strouhal number based on the boundary layer thickness is in the range of 0.033 - 0.33, and the amplitude of about 10-20%. Measured are time-averaged and phase-averaged velocity variations, pressure variations and temperature distributions of the flow field. Experimental conditions are identified by boundary layer measurements. Injectant behavior is characterized by the measurements of unsteady pressure in the plenum chamber and free-stream static pressure. The film cooling effectiveness is evaluated from the insulated wall temperature measurement. It has been found that bulk flow pulsation provides very large diffusion of the injectants and the effectiveness is significantly reduced by the flow pulsations.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.2
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• pp.52-55
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• 2006

The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.9
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• pp.1627-1634
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• 2017

In this work, a junctionless transistor with different film thickness of amorphous InGaZnO has been fabricated and it's instability has been analyzed with different film thickness under positive and negative gate stress as well as light illumination. It was found that the threshold voltage shift and the variation of drain current have been increased with decrease of film thickness under the condition of gate stress and light illumination. The reasons for the observed results have been explained by stretched-exponential model and device simulation. Due to the reduced carrier trapping time with decrease of film thickness, electrons and holes can be activated easily. Due to the increase of vertical channel electric field reaching the back interface with decrease of film thickness, more electrons and holes can be accumulated in back interface. When one decides the film thickness for the fabrication of junctionless transistor, the more significant device instability with decrease of film thickness should be consdered.

• Journal of the Korean Magnetics Society
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• v.25 no.4
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• pp.117-122
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• 2015

The holes with a diameter of $35{\mu}m$ inside the GMR-SV (giant magnetoresistance-spin valve) film were patterned by using the photolithography process and ECR (electron cyclotron resonance) Ar-ion milling. From the magnetoresistance curves of the GMR-SV film with holes measuring by 4-electrode method, the MR (magnetoresistance ratio) and MS (magnetic sensitivity) are almost same as the values of initial states. On other side hand, the $H_{ex}$ (exchange bias coupling field) and $H_c$ (coercivity) dominantly increased from 120 Oe and 10 Oe to 190 Oe and 41 Oe as increment of the number of holes inside GMR-SV film respectively. These results were shown to be attributed to major effect of EMD (easy magnetic domian) having a region positioned between two holes perpendicular to the sensing current. On the basis of this study, the fabrication of GMR-SV applying to the hole formation improved the magnetoresistance properties having the thermal stability and durability of bio-device.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• 한국전산유체공학회:학술대회논문집
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• 2010.05a
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• pp.247-251
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• 2010

It is very difficult to understand and estimate the heat transfer and flow characteristics in the combustor, which is one of main components in the Auxiliary Power Unit (APU), because its flow filed has very complex structure. In this paper, specified is characteristics of injection and flow through different air goles in the liner, which consist of large circular holes film cooling holes, and tangential air swirl holes. The durability of the liner depends on whether the surface of the liner is exposed to the hot gas over 1000 $^{\circ}C$ of a temperature or net. It is proved that the locations of hot spots estimated from the calculation using CFD are matched well with that from the test. In this study, CFD simulations were performed to examine the heat transfer and temperature distributions in and about a liner wall with film cooling on the wall. This computational study is based on the ensemble average continuity, compressible Navier-Stokes, energy, and PDF combustion equations closed by the standard $k-{\varepsilon}$ turbulence model with standard wall functions for the gas phase and the Fourier equations for conduction in the solid phase.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.03a
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• pp.53-58
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• 2008

Film cooling effectiveness on a flat plate was measured with pressure sensitive paint. The pressure sensitive paint(PSP) changes the intensity of its emissive light with pressure and the characteristic was used in film cooling effectiveness measurement. The film coolants were air and nitrogen, and by comparing the intensity of PSP coated surface with each coolant, the film cooling effectiveness was calculated. Three blowing ratio of 0.5, 1, and 2 were tested with two mainstream turbulence intensities. Results clearly showed the effect of blowing ratio and mainstream turbulence intensity. As the blowing ratio increases, the film cooling effectiveness was decreased near the film cooling holes. However, the film cooling effectiveness far downstream from the injection hole was higher for higher blowing ratio. As the mainstream turbulence intensity increased, the film cooling effectiveness was decreased at far downstream from the injection hole.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.95-96
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• 2006

ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2007.11a
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• pp.329-334
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• 2007

Various cooling techniques have been applied to the gas turbine blade in order to reduce heat load to the blade. On the blade surface, film cooling method is used and the accurate information of film cooling effectiveness should be evaluated in order to predict the exact temperature distribution in the blade. In this study, pressure sensitive paint (PSP) was used to measure the film cooling effectiveness on a flat plate. Results showed that PSP technique successfully evaluated the distribution of film cooling effectiveness. Three blowing ratios of 0.5, 1, and 2 were tested and the film cooling effectiveness near holes decreased as the blowing ratio increased, however, increased far downstream from the holes.

• Journal of Sensor Science and Technology
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• v.32 no.5
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• pp.328-333
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• 2023

This study experimentally verified the etch rate of the SiO₂ sacrificial layer etching process with a single etch hole using vapor-phase hydrogen fluoride (VHF) etching. To fabricate small-sized polysilicon etch holes, both circular and triangular pattern masks were employed. Etch holes were fabricated in the polysilicon thin film on the SiO₂ sacrificial layer, and VHF etching was performed to release the polysilicon thin film. The lateral etch rate was measured for varying etch hole sizes and sacrificial layer thicknesses. Based on the measured results, we obtained an approximate equation for the etch rate as a function of the etch hole size and sacrificial layer thickness. The etch rates obtained in this study can be utilized to minimize structural damage caused by incomplete or excessive etching in sacrificial layer processes. In addition, the results of this study provide insights for optimizing sacrificial layer etching and properly designing the size and spacing of the etch holes. In the future, further research will be conducted to explore the formation of structures using chemical vapor deposition (CVD) processes to simultaneously seal etch hole and prevent adhesion owing to polysilicon film vibration.