• Journal of Microbiology and Biotechnology
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• v.14 no.5
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• pp.1038-1042
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• 2004

The photoelectric responses of a biodevice consisting of chlorophyll $\alpha$ Langmuir-Blodgett film were investigated. Chlorophyll $\alpha$ Langmuir-Blodgett films were deposited onto ITO and Au coated glass. To confirm film formation, surface analysis of chlorophyll $\alpha$ Langmuir-Blodgett film was carried out by measurement using atomic force microscopy. The metal/insulator/metal structured biodevice was constructed by depositing aluminum onto the chlorophyll $\alpha$ Langmuir-Blodgett film surface. To investigate the photoelectric response, the current-voltage characteristic was measured by the conducting metal tip. The photoswitching function and transient photovoltage characteristics of the proposed device were measured by irradiation with Ar ion laser and $N_2$ pulse laser, respectively. This research suggested that the proposed biodevice consisting of chlorophyll $\alpha$ could be applied to the molecular scale biosensor and/or bioelectronic device.

• Journal of the Korean Applied Science and Technology
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• v.21 no.3
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• pp.259-266
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• 2004

Film properties of monodispersed model composite latexes with particle size of 190 nm, which consist of n-butyl acrylate as a soft phase monomer and methyl methacrylate as a hard phase monomer with different morphology was examined. Five different types of model latexes were used in this study such as random copolymer particle, soft-core/hard-shell particle, hard-core/soft-shell particle, gradient type particle, and mixed type particle. Tensile strength and tensile elongation at break of final films were evaluated. Those properties can be interpreted in terms of PBA/PMMA phase ratio and their morphology. The interfacial adhesion strength was also evaluated using $180^{\circ}$ peel strength measurement and cross hatch cutting test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.3
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• pp.196-200
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• 2015

In this paper, we fabricated flexible antenna radiator using the CNT/PVDF (carbon nanotube / polyvinylidene fluoride) composite film. We used polymer film as a matrix material for the flexible devices, and introduced CNTs for adding conductivity into the film resulting in obtaining performances of the antenna radiator. Spray coating method was used to form the CNT/PVDF composite radiator, and pattern formation of the radiator was done by shadow mask during the spray coating process. We investigated the electrical properties of the CNT/PVDF composite films with the CNT concentration, and also estimated the radiator performance. Finally we discuss the feasibility of the CNT/PVDF composite radiator for the flexible antenna.

• ETRI Journal
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• v.20 no.2
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• pp.241-249
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• 1998

The structure and electrical characteristics of metal-ferroelectric-semiconductor FET(MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/drain electrodes and $BaMgF_4$ film as a gate dielectric. The polysilicon source and drain were built-up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about $0.6{\mu}C/cm^2$ and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1440-1441
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• 2008

In this paper, we investigated the diffraction grating efficiency on AsSeS and Ag-doped amorphous chalcogenide Ag/AsSeS thin film for used to volume hologram. The Chalcogenide film thickness was 0.5um and Ag thin film was varied from 10nm and 20nm. Diffraction efficiency was obtained from (P:P) polarized Diode Pumped Solid State laser(DPSS, 532.0nm: 200mW) beam on AsSeS and Ag/AsSeS thin films. As a results, diffraction grating was not formed at AsSeS thin film but at Ag-doped AsSeS thin film, diffraction grating was formed well compare with the former.

• Macromolecular Research
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• v.14 no.6
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• pp.617-623
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• 2006

In order to achieve an oriental lacquer (OL) film with a thick consistency, UV-curable silicone acrylate (SA) was added to OL by a dual curing process. The addition of 5 wt% UV-curable SA to the OL fomulation enabled the preparation via a single drying step of a $77{\mu}m-thick$ film exhibiting excellent surface properties. FTIR-ATR was used to investigate the effect of UV-curable SA on the behavior of film formation during curing, and the relaxation behavior of the produced films was investigated by dielectric spectroscopy. Dielectric properties were measured in the frequency range $10^{-2}-10^5\;Hz$ at various temperatures between -100 and $200^{\circ}C$. The results demonstrated that OL modified by UV-curable SA has a higher glass transition temperature and stronger secondary relaxation at a lower temperature than the conventional OL system. The OL film modified with UV-curable SA was presumed to be harder at the surface and tougher than conventional OL film.

• Transactions of the Society of Information Storage Systems
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• v.8 no.1
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• pp.1-5
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• 2012

We present a method for preparing a quantum dot fluorescent monolayer film on a glass substrate. Since nanoparticles aggregate easily, it is difficult to prepare a nanoparticle monolayer film. We have used a covalent bond, the peptide bond, to fix quantum dots on the glass substrate. The surface of the quantum dot was functionalized with carboxyl groups, and the glass substrate was also functionalized with amino groups using a silane coupling agent. The carboxyl group can be strongly coupled to the amino group. We were able to successfully prepare a monolayer film of CdSe quantum dots on the glass substrate.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.3
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• pp.143-148
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• 2009

We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.209-209
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• 2012

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An additional doping was not applied for heterojunction solar cells due to the spontaneous junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedding Si heterojunction solar cell provided significantly enhanced efficiency of 9.23% as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme of the effective TCO film-embedding heterojunction Si solar cells.