• Journal of radiological science and technology
• /
• v.8 no.2
• /
• pp.11-14
• /
• 1985

The author came to analize and get the following problems after researched radiographic quality in order to find out the necessary factors to improve in radiographs of frontal projection of the chest selected at random of the adult patients (1545 male, 1520 female) who had been examined in 4 departments of radiology of the general hospitals in Seoul and Kyungki area. 1. Problems of x-ray film or of radiographic cassette appeared in 2.97% radiographs on account of selection of the film size (except costophrenic sinus) (1.79%), poor screen-film contact (0.85%), light leakage of cassette (0,33%). 2. Problems of patients' positioning or breathing appeared in 16.57% radiographs of all because of overlapping of lung apex and clavicle (6.98%), overlapping of scapula and lung field (5.87%), asymmetrical projection of clavicles (1.76%), errors in positioning and breathing of the patient (1.96%). 3. Problems of x-ray exposure factors or film processing appeared in 22.25% radiographs because of over-density (2.64%), under-density (3.95%), fog (0.59%), demonstration density under clavicles or lung marking unsharply (3.82%), not clear of lung marking from breast region (0.94%), not clear the lung marking from the part overlapped of heart and lungs (3.92%), not clear the lung marking from the part overlapped of liver and lung (6.49%).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.8
• /
• pp.704-710
• /
• 2000

Metal electrode materials for plasma display panel should have low electrical resistivity in order to maintain stable gas discharge and have fast response time. They should also hae good film uniformity adhesion and thermal stability. In this study Cr/Cu/Cr metal electrode structure is formed by DC magnetron sputtering. Cr and Cu films were deposited on ITO coated glasses with various DC power density and main pressures as the major parameters. After metal electrodes were formed a heat treatment was followed at 55$0^{\circ}C$ for 20 min in a vacuum furnace. The intrinsic stress of the sputtered Cr film passed a tensile stress maximum decreased and then became compressive with further increasing DC power density. Also with increasing the main pressure stress turned from compression to tension. After heat the treatment the electrical resistivity of the sputtered Cu film of 2${\mu}{\textrm}{m}$ in thickness prepared at 1 motor with the applied power density of 3.70 W/cm$^2$was 2.68 $\mu$$\Omega$.cm With increasing the main pressure the DC magnetron sputtered Cu film became more open structure. The heat treatment decreased the surface roughness of the sputtered Cr/Cu/Cr metal electrodes.

• Bulletin of the Korean Chemical Society
• /
• v.30 no.6
• /
• pp.1357-1359
• /
• 2009

Many researchers studied cell culturing on surfaces with chemical functional groups. Previously, we reported surface properties of plasma polymerized ethylenediamine (PPEDA) films deposited by plasma enhanced chemical vapor deposition with various plasma conditions. Surface properties of PPEDA films can be controlled by plasma power during deposition. In this work, to analyze correlation of cell adherence/proliferation with surface property, we cultured rat intestinal epithelial cells-18 on the PPEDA films deposited with various plasma powers. It was shown that as plasma power was decreased, density of cells cultured on the PPEDA film surface was increased. Our findings indicate that plasma power changed the amine density of the PPEDA film surface, resulting in density change of cells cultured on the PPEDA film surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.123-126
• /
• 2003

The electrophoretic deposition method using the suspension solution with additives under the electric potential was applied for the fabrication of YBCO superconductor wire. This method was able to simplify the fabrication facilities, and produce an uniform and dense thick film. To improve the critical current density of deposited films, the additive PEGs(Poly Ethylene Glycole) with the molecular weight of 600, 1000 and 3400, were used as chemical binders for the suspension solution. The organic additive PEG showed better effects to the properties of YBCO superconductor wire. The PEG improved the adhesion between superconductor particles and suppressed the crack on the surface, which enhanced the surface uniformity and density of YBCO deposited film. It was found that acetone suspension solution showed better deposition properties than the others. The samples fabricated in the solution with the additive, 8 vol.% of 1% PEG(1000), showed the highest critical current density measured as $2300{\sim}2400\;Acm^2$ at 77 K, 0 T.

• Progress in Superconductivity and Cryogenics
• /
• v.18 no.2
• /
• pp.8-13
• /
• 2016

Superconducting properties of thin film MgB2 superconductors irradiated with 45 MeV ${\alpha}$-particle beam were studied. After the irradiation, enhancement of the critical current density and pinning force was observed, scaling close to strong pinning formula. Double logarithmic plots of the maximum pinning force density with irreversible magnetic field show a power law behavior close to carbon-doped MgB2 film or polycrystals. Variation of normalized pinning force density in the reduced magnetic field suggests scaling formulas for strong pinning mechanism like planar defects. We also observed a rapid decay of critical current density as the vortex lattice constant decreases, due to the strong interaction between vortices and increasing magnetic field.

• Journal of the Korean Vacuum Society
• /
• v.7 no.s1
• /
• pp.106-117
• /
• 1998

Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi$(OC_2H_5)_3$ (FTES), and $O_2$ mixture gases by a helicon plasms source. High density $O_2$/FTES/Ar plasma of ~$10^{12} \textrm{cm}^{-3}$ is obtained at low pressure (<3mTorr) with RF power above 900 W in the helicon plasma source. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The FTES and $O_2$ gases are greatly dissociated at the helicon mode that is launched at the above threshold plasma density. FTIR and XPS spectra shows that the film has Si-F, and C-F bonds during the formation process of the film which may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, $8\times10^{-9}\textrm{A/cm}^2$, and > 12 MV/cm, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.4
• /
• pp.334-338
• /
• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.656-660
• /
• 2003

We studied the crystallization behavior of LP-CVD a-Si film using UV pulsed laser. With increase in the shot number of irradiation by fixing its energy density, poly-Si film having a large grain size of $0.5 {\mu}m$ was obtained. By analyzing the crystallized Si films using optical analysis such as Raman spectroscopy or AFM technique etc., conspicuous correlation between the grain size and the resultant film properties such as the stress or the roughness has been found. With the increase in the energy density or the shots number of laser, remarkable grain growth occurred following to the roughness formation corresponding to the increase in the tensile stress.

• ETRI Journal
• /
• v.13 no.2
• /
• pp.21-27
• /
• 1991

Effects of annealing on the dielectric properties and microstructures of thin tantalum oxide film(25nm) deposited on p-type Si substrate with rf reactive magnetron sputtering were investigated. The leakage current density was remarkably reduced from $10^-8$ to $10^-12$ A/$\mum^2$at the electric field of 2MV/cm after rapid thermal annealing(RTA) in $O_2$at $1000^{\circ}C$, while little leakage reduction was observed after furnace annealing in $O_2$ at $500^{\circ}C$. The structural changes of thin tantalum oxide film after annealing were examined using high resolution electron microscope(HREM). The results of HREM show that substantial reduction in the leakage current density after the RTA in $O_2$ can be attributed to crystallization and reoxidation of the thin amorphous tantalum oxide film.

• Journal of Radiation Protection and Research
• /
• v.19 no.1
• /
• pp.37-50
• /
• 1994

The experimental evaluation of exposure conversion formula using the relationship between optical photo-density, exposure dose and the quality of radiation characteristics of radiation energy to X-ray and ${\gamma}-rays$. The film badge dosimeter is analysed by exposure conversion formula which evaluate image fading characteristics for development time and directional characteristics for incident beam angle. In conclusion, exposure conversion formula evaluated of this study is satisfied with quality decision criterion of the film badge dosimeter.