한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.656-660
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- 2003
Crystallization behavior of a-Si film using UV pulsed laser
- Kim, Do-Young (Samsung Advanced Institute of Technology (SAIT)) ;
- Park, Kyung-Bae (Samsung Advanced Institute of Technology (SAIT)) ;
- Kwon, Jang-Yeon (Samsung Advanced Institute of Technology (SAIT)) ;
- Jung, Ji-Sim (Samsung Advanced Institute of Technology (SAIT)) ;
- Xianyu, Wenxu (Samsung Advanced Institute of Technology (SAIT)) ;
- Park, Young-soo (Samsung Advanced Institute of Technology (SAIT)) ;
- Noguchi, Takashi (Samsung Advanced Institute of Technology (SAIT), Sungkyunkwan University)
- Published : 2003.07.09
Abstract
We studied the crystallization behavior of LP-CVD a-Si film using UV pulsed laser. With increase in the shot number of irradiation by fixing its energy density, poly-Si film having a large grain size of
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