• Journal of radiological science and technology
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• v.2 no.1
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• pp.95-99
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• 1979

When the ${\gamma}-ray$ of average energy 375KeV emitted by Ir-192 is exposed to each film through lead foil with various thickness, the film sensitivity will be different according to the thickness of lead foil and film type. The results on the study, different density and sensitive ratio appeared depending on exposed time and film type, but was made on the following common points. 1. The effect of film sensitivity by the front lead foil showed rapid increase up to the thickness of more or less 0.03mm, and the thicker lead foil was decreased more in the thickness of about $0.05{\sim}0.09mm$. 2. The effect of film sensitivity by the back lead foil was increased up to around of $0.03{\sim}0.08mm$ thickness, the maximum sensitivity was obtained in the thickness of more than $0.03{\sim}0.08mm$ without any change in the above effect. 3. The sensitivity of front lead foil was higher than that of back lead foil in thin lead foil with about 0.127mm thickness, but the sensitivity of back lead foil was higher than that of front lead foil when thickness became thicker.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4798-4808
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• 2022

The porous corrosion deposits (known as CRUD) adhered to the cladding have an important effect on the heat transfer from fuel rods to coolant in PWRs. The vapor film is the main constituent in the two-phase film boiling model. This paper presents a vapor film thickness correlation, associated with CRUD porosity, CRUD chimney density, CRUD particle size, CRUD thickness and heat flux. The dependences of the vapor film thickness on the various influential factors can be intuitively reflected from this vapor film thickness correlation. The temperature, pressure, and boric acid concentration distributions in CRUD can be well predicted using the two-phase film boiling model coupled with the vapor film thickness correlation. It suggests that the vapor thickness correlation can estimate the vapor film thickness more conveniently than the previously reported vapor thickness calculation methods.

• Transactions of Materials Processing
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• v.22 no.3
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• pp.171-177
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• 2013

Vacuum-assisted thermoforming is one of the critical steps for successful application of film insert molding (FIM) to make parts of complex shape. If the thickness distribution of the formed film is non-uniform, then cracking, deformation, warpage, and wrinkling can easily occur at the injection molding stage. In this study, the simulation of thermoforming was performed to predict the film thickness distribution, and the results were compared with experiments. Uniaxial tensile tests with a constant crosshead speed for various high temperatures were conducted to investigate the stress-strain behavior. An instance of yielding occurred at the film temperature of $90^{\circ}C$, and the film stiffness increased with increasing crosshead speed. Two types of viscoelastic models, G'Sell model, K-BKZ model, were used to describe the measured stress-strain relationship. The predicted film thickness distributions were in good agreement with the experimental results.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.9
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• pp.1627-1634
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• 2017

In this work, a junctionless transistor with different film thickness of amorphous InGaZnO has been fabricated and it's instability has been analyzed with different film thickness under positive and negative gate stress as well as light illumination. It was found that the threshold voltage shift and the variation of drain current have been increased with decrease of film thickness under the condition of gate stress and light illumination. The reasons for the observed results have been explained by stretched-exponential model and device simulation. Due to the reduced carrier trapping time with decrease of film thickness, electrons and holes can be activated easily. Due to the increase of vertical channel electric field reaching the back interface with decrease of film thickness, more electrons and holes can be accumulated in back interface. When one decides the film thickness for the fabrication of junctionless transistor, the more significant device instability with decrease of film thickness should be consdered.

• Journal of the Optical Society of Korea
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• v.18 no.3
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• pp.236-243
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• 2014

Surface profiling and film thickness measurement play an important role for inspection. White light interferometry is widely used for engineering surfaces profiling, but its applications are limited primarily to opaque surfaces with relatively simple optical reflection behavior. The conventional bucket algorithm had given inaccurate surface profiles because of the phase error that occurs when a thin-film exists on the top of the surface. Recently, reflectometry and white light scanning interferometry were combined to measure the film thickness and surface profile. These techniques, however, have found that many local minima exist, so it is necessary to make proper initial guesses to reach the global minimum quickly. In this paper we propose combing reflectometry and white light scanning interferometry to measure the thin-film thickness and surface profile. The key idea is to divide the measurement into two states; reflectometry mode and interferometry mode to obtain the thickness and profile separately. Interferogram modeling, which considers transparent thin-film, was proposed to determine parameters such as height and thickness. With the proposed method, the ambiguity in determining the thickness and the surface has been eliminated. Standard thickness specimens were measured using the proposed method. Multi-layered film measurement results were compared with AFM measurement results. The comparison showed that surface profile and thin-film thickness can be measured successfully through the proposed method.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.1444-1447
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• 2004

For the OLED evaporation process, thin film thickness uniformity is of great practical importance. In order to achieve the better thickness uniformity, geometric simulation of film thickness distribution profile is required. In this paper, a geometric modeling algorithm is introduced for process simulation of full-color OLED evaporating system. The physical fact of the evaporation process is modeled mathematically. Based on the developed method, the uniformity of the organic layer thickness can be successfully controlled.

• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.701-708
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• 1993

Pd-doped SnO2 thin films for hydrogen gas sensing were fabricated by reactive fo magnetron sputtering and were studied on effects of film thickness and Pd doping content. Pd doping caused the optimum sensor operation temperature to reduce down to ~25$0^{\circ}C$ and also enhanced gas sensitivity, compared with undoped SnO2 film. Gas sensitivity depended on the film thickness. The sensitivity increased with decreasing the film thickness, showing maximum sensitivities at the thickness of 730$\AA$ and 300~400$\AA$ for the undoped SnO2 and the Pd-doped SnO2 film, respectively. Further decrease of the film thickness beyond these thickness ranges, however, resulted in the reduction of sensitivity again.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1999.11a
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• pp.103-113
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• 1999

Point contact film thickness in elastohydrodynamic lubrication (EHL) is analyzed by the image processing method for the monochromatic incident light. Interference between the reflected lights both on Cr coating of glass disk and on super finished ball makes circular fringes, which are regarded as film thickness together with numbering of fringe order. In this study, we developed technology to measure the film thickness by analyzing dark and bright intensity waves which results from monochrome green light. Two typical fringe patterns only with intensity values 3re examined for the measurement of point contact EHL film thickness. We expect that this technology will give valuable clue to improve color image processing analysis for high resolution of EHL film thickness with white incident light.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.403-406
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• 2012

Effect of thickness on ZnO properties including the compositional ratio and crystallinity has been systematically investigated using a variety of characterization tools of x-ray diffraction, field emission scanning electron microscopy, x-ray fluorescence and x-ray photoelectron spectroscopy. Interestingly, it was observed that ZnO films below 80 nm in thickness were in oxygen deficiency, while the oxygen ratio was increased in the films above the thickness, although the compositional ratio of ZnO film was not linearly varied with increasing film thickness. Also, ZnO crystallinity, which is characterized by (002) diffraction pattern, was clearly improved with increasing film thickness. The properties of ZnO film with different sputtering time and the nature of direct current reactive sputtering process were discussed in terms of compositional ratio, especially oxygen ratio in ZnO film.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2279-2284
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• 2007

This study is intended to analyze the effect of thin ink-film thickness around rotating printing roll on the printing quality in the gravure printing process which is used for making electronics circuit like a RFID tag with a conductive ink. The present work numerically estimates the film thickness around rotating roller partially immersed in ink, for which the volume of fluid (VOF) method was adopted to figure out the film formation process around rotating roller. Parameter studies were performed to compare the effect of ink viscosity, surface tension, roller rotating speed, immersed angle on the film thickness. The result indicates that the film thickness has a strong dependency on the fluid viscosity, while the surface tension has negligible effect.