• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.218-221
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• 2008

Bottom-gate microcrystalline silicon thin film transistors (${\mu}c$-Si:H TFTs) were fabricated on glass and transparent polyimide substrates by conventional 13.56 MHz RF plasma enhanced chemical vapor deposition at $200^{\circ}C$. The deposition rate of the ${\mu}c$-Si:H film is 24 nm/min and the amorphous incubation layer near the ${\mu}c$-Si:H/silicon nitride interface is unobvious. The threshold voltage of ${\mu}c$-Si:H TFTs can be improved by $H_2$ or $NH_3$ plasma pretreatment silicon nitride film.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.135.2-135
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• 1998

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제16회 학술발표회 논문개요집
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• pp.154-154
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• 1998

• 한국IT서비스학회지
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• 제18권3호
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• pp.37-51
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• 2019

This study aims to establish the direction of development of Korean cinematography technology in the era of the 4th Industrial Revolution and present future development plan. First, in order to diagnose the current status, supporting policies of various countries and film technology research trends were analyzed. Each country is expanding the support for film technology including tax credits. Through the analysis of patents and research papers, recent issues have shown that Virtual Reality, HMD, Artificial Intelligence, and Big Data are applied to film technology. Next, the survey results of Korean film technology level for filmmakers were 70% for production, 47.5% for distribution, and 60.3% for screening comparing to the level of the leading country. The gap was caused by the lack of funds for research and development and insufficient government support policies. In addition, interviews with film makers revealed the need to support filmmaking that combines technologies such as localized film technology, artificial intelligence, and deep learning. Finally, it is suggested that technology sharing platform should be developed in the future through the discussions of technology, science and academic experts', and technology development should be carried out in the field. As a result, film technology R&D should be promoted in order to develop technologies specific to movies. Advanced technology foundation for the growth of film technology should be developed to systematically equip the infrastructures such as education and human resources. In addition, technology development that links standardization should be carried out. In this study, we propose the development of Korean film technology to prepare for the 4th Industrial Revolution, and it is expected that the 2022 film technology power nation will be realized.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제16회 학술발표회 논문개요집
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• pp.177-177
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• 1998

• Nuclear Engineering and Technology
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• 제54권11호
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• pp.4329-4337
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• 2022

Jet impinging device is designed for decay heat removal on horizontal fuel rods in a low temperature heating reactor. An experimental system with a fuel rod simulator is established and experiments are performed to evaluate water film covering capacity, within 0.0287-0.0444 kg/ms mass flow rate, 0-164.1 kW/m² heating flux and 13.8-91.4℃ feeding water temperature. An effective method to obtain the film coverage rate by infrared equipment is proposed. Water film flowing patterns are recoded and the film coverage rates at different circumference angles are measured. It is found the film coverage rate decreases with heating flux during single-phase convection, while increases after onset of nucleate boiling. Besides, film coverage rate is found affected by Marangoni effect and film accelerating effect, and surface wetting is significantly facilitated by bubble behavior. Based on the observed phenomenon and physical mechanism, dry-out depth and initial dry-out rate are proposed to evaluate film covering potential on a heating surface. A model to predict film coverage rate is proposed based on the data. The findings would have reliable guide and important implications for further evaluation and design of decay heat removal system of new reactors, and could be helpful for passive containment cooling research.

• 한국세라믹학회지
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• 제38권1호
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• pp.100-105
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• 2001

An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film ( $V_2$ $O_{5}$ ) on I $n_2$ $O_3$: Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/ $V_2$ $O_{5}$ full-cell structure with a constant current clearly shows that the Pt-doped $V_2$ $O_{5}$ cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the Pt doping process induces a more random amorphous structure than an undoped $V_2$ $O_{5}$ film. In addition to its modified structure, the Pt-doped $V_2$ $O_{5}$ film has a smoother surface than the undoped sample. Compared to an undoped $V_2$ $O_{5}$ film, the Pt doped $V_2$ $O_{5}$ cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the $V^{+5}$. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on I $n_2$ $O_3$: Sn coated glass.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제16회 학술발표회 논문개요집
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• pp.53-53
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• 1998

• Nuclear Engineering and Technology
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• 제54권12호
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• pp.4798-4808
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• 2022

The porous corrosion deposits (known as CRUD) adhered to the cladding have an important effect on the heat transfer from fuel rods to coolant in PWRs. The vapor film is the main constituent in the two-phase film boiling model. This paper presents a vapor film thickness correlation, associated with CRUD porosity, CRUD chimney density, CRUD particle size, CRUD thickness and heat flux. The dependences of the vapor film thickness on the various influential factors can be intuitively reflected from this vapor film thickness correlation. The temperature, pressure, and boric acid concentration distributions in CRUD can be well predicted using the two-phase film boiling model coupled with the vapor film thickness correlation. It suggests that the vapor thickness correlation can estimate the vapor film thickness more conveniently than the previously reported vapor thickness calculation methods.

• 한국진공학회지
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• 제6권S1호
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• pp.110-114
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• 1997

Development of metal ion source growth of high quality Cu metal film formation of non-stoichiometric $SnO_2$ films of Si(100), and modification fo polymer surface by low enregy ion beam have been carried out at KIST Ion Beam Lab. A new metal ion source with high ion beam flux has been developed by a hybrid ion beam (HIB) deposition and non-stoichiometric $SnO_2$ films are controlled by supplying energy. The ion assisted reaction (IAR) in which keV ion beam is irradiated in reactive gas environment has been deveolped for modifying the polymers and enhancing adhesion to other materials and advantages of the IAR have been reviewed.