• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1331-1332
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• 2007

In the present works, we investigate the thermal characteristics on Ag/$As_{2}S_{3}$ and Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film structure for PMC (Programmable Metallization Cell).As the results of resistance change with the temperature on Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film, the resistance was abruptly dropped from the initial resistance of 1.32 M ${\Omega}$ to the saturated value of 800 ${\Omega}$ at $203^{\circ}C$. On the other hand, the resistance increased to 1.3 $M{\Omega}$ at $219^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제32권4호
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• pp.272-275
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• 2019

We investigated the electrical characteristics of amorphous silicon-zinc-tin-oxide (a-SZTO) thin films deposited by RF-magnetron sputtering at room temperature depending on the deposition time. We fabricated a thin film transistor (TFT) with a bottom gate structure and various channel thicknesses. With increasing channel thickness, the threshold voltage shifted negatively from -0.44 V to -2.18 V, the on current ($I_{on}$) and field effect mobility (${\mu}_{FE}$) increased because of increasing carrier concentration. The a-SZTO film was fabricated and analyzed in terms of the contact resistance and channel resistance. In this study, the transmission line method (TLM) was adopted and investigated. With increasing channel thickness, the contact resistance and sheet resistance both decreased.

• 한국재료학회지
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• 제29권7호
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• pp.408-411
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• 2019

ZTO/n-Si thin film is produced to investigate tunneling phenomena by interface characteristics by the depletion layer. For diversity of the depletion layer, the thin film of ZTO is heat treated after deposition, and the gpolarization is found to change depending on the heat treatment temperature and capacitance. The higher the heat treatment temperature is, the higher the capacitance is, because more charges are formed, the highest at $150^{\circ}C$. The capacitance decreases at $200^{\circ}C$ ZTO heat treated at $150^{\circ}C$ shows tunneling phenomena, with low non-resistance and reduced charge concentration. When the carrier concentration is low and the resistance is low, the depletion layer has an increased potential barrier, which results in a tunneling phenomenon, which results in an increase in current. However, the ZTO thin film with high charge or high resistance shows a Schottky junction feature. The reason for the great capacitance increase is the increased current due to tunneling in the depletion layer.

• 한국세라믹학회지
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• 제51권4호
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• pp.344-349
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• 2014

$RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

• Corrosion Science and Technology
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• 제3권4호
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• pp.172-177
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• 2004

Biaxially oriented polyethylene terephthalate copolymer(BO - PET)film laminated aluminiums have been applied for chip condenser case. The BO PET film is characterized by high molecular which gives high corrosion resistance, good adhesion and high heat resistance. The higher orientation lowers formability of the film. So, optimum orientation has to be controlled during the laminating process. And to confirm the adhesion between BO PET and aluminium and to guarantee the formability of PET laminated aluminums, we have controlled the chromium oxides weight on the aluminium and laminating condition ( laminating temperature, soaking temperature and lag time after nip roll and quenching conditions) This paper discusses the effect of the laminating conditions on the formability of laminated aluminums. As results, it is clear that the orientation of the BO PET film decreased with an increase in the strip temperature. When the film temperature is over the melting point of the film, its orientation drastically decreased.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2014년도 추계 학술논문 발표대회
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• pp.61-62
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• 2014

To evaluate anti-corrosion performance of high-frequency arc metal spray film in accordance with metal type and epoxy sealing coat application status, electrochemical impedance spectroscopy(EIS) method was conducted in this study. As a result, in case of applying Al-Mg alloy metal spray film, it showed the best polarization resistance. In case of applying epoxy sealing coat, it showed increased polarization resistance of arc metal spray film. Through this experiment, it is judged that Al-Mg alloy arc metal spray film with epoxy sealing coat can increase the biggest anti-corrosion performance of high-frequency arc metal spray film on steel.

• 대한금속재료학회지
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• 제49권2호
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• pp.192-196
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• 2011

The multi-layered thin film with an ITO/Ag/ITO structure was produced on PET by using magnetron reactive sputtering method. First, 30 nm of ITO thin film was coated on PET by using normal temperature process. Then 20-52 nm of the Ag thin film was coated. Lastly, 30 nm of ITO thin film was coated on Ag layer. The sample of the 20 nm Ag thin film showed more than 70% transmission and a $2.7{\Omega}/{\Box}$ sheet resistance. When compared to the existing single-layered transparent conducting thin film, multi-layered film was found to be superior with about $5{\Omega}/{\Box}$ less sheet resistance. However, since the Ag layer became thinner, the band gap energy needs to be increased to more than 3.5 eV.

• Journal of Advanced Marine Engineering and Technology
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• 제34권5호
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• pp.670-677
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• 2010

가혹한 부식환경 하에 사용되어 지고 있는 다양한 강구조물에 대해서 많은 표면방식법이 있다. 그 중의 한방법인 용사는 다양한 강구조물의 표면방식을 위하여 비교적 최근에 개발된 유용한 방식법이다. 그러나 용사피막도 환경오염의 가속화에 따라 점차 더욱 좋은 내식성을 필요로 하고 있다. 본 연구에서는 아아크 용사에 의해서 도막두께 $200{\mu}m$의 피막을 만들었으며, 피막의 종류는 순 아연,순 알류미늄, 합금피막(Al:Zn=85:15) 및 (Al:Zn=95:5)의 합금피막이었다. 그리고 이들 피막의 내식성을 해수용액에서 전기화학적인 방법으로 고찰 하였다. 순 알류미늄 피막은 다른 피막에 비해서 비교적 상당히 좋은 내식성을 보였다. 그리고 합금피막도 역시 순 아연피막에 비해서 좋은 내식성을 보였다. 특히 순 알류미늄 피막은 갈바륨 용사라고 알려진 합금피막(Al:Zn=85:15)보다 해수용액에서 내식성이 상대적으로 좋았음이 관찰되었다. 순 아연의 부식된 표면양상은 입게부식의 형태를 나타내었으나 순 알류미늄과 합금피막은 균일부식의 형태를 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.913-917
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• 2003

In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)

• 한국전자통신학회논문지
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• 제16권3호
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• pp.451-456
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• 2021

반도체 메모리 소자의 커패시터에서 셀 커패시턴스의 향상과 scale down을 위해 유전막으로써 적층형 ONO 구조가 도입되었고 이들의 박막화가 지속적으로 시도되고 있으나 공정 처리 과정에서 많은 문제들이 대두되고 있다. 본 연구에서는 L/L LPCVD를 사용하여 약 10Å의 자연산화막 성장을 억제함으로써 3fF/cell의 정전 용량을 확보할 수 있었다. 또한 유전막의 박막화에 따른 질화막의 이상산화에 미치는 영향을 고찰함으로써 내산화성을 확보할 수 있는 유전막 형성의 안정적인 공정 관리 방법을 제안하였다.