• Current Photovoltaic Research
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• v.10 no.1
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• pp.28-32
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• 2022

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.3
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• pp.218-223
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• 2019

To prevent the low heating effect of heating system caused by the high sheet resistance of CVD graphene, multi-layered graphene was laminated to implement a Transparent plane heating system with good optical properties of low-resistance. Low-resistance plane heating system implemented by $300{\times}400{\times}5mm$ heating plane laminated multi-layered CVD graphene film and PWM control system to drive efficient power. A plane resistance value of $85.5{\Omega}/sq$ was measured on average for 4-layer CVD graphene film used as a heating plane. Thus, the transfer by thermal film as the method of implementing low-resistance CVD graphene is reasonable. The experimental results of heat test show that an average heat-rise rate in low-resistance, transperent plane heating system using CVD graphene is $10^{\circ}C/min$ and has an optical transmittance rate of 86.44%. Therefore, the proposed heating system is applicable to large window glass and vehicle heating window-shild-glass.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.185-187
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• 2012

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.137-140
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• 1997

A cathodic arc with beam filter is employed for the deposition of metallic and hydrogen-free amorphous carbon films. A solenoid filter is used to prevent macropaticles and nonionized atoms from reaching the substrate. The detail transport characters of the filter are presented in the paper. With an optmum filter arrangement we are able to obtain a filter output of 18.4% of the total number of ions produced by the vacuum arc discharge. The deposited amorphous cabon thin film contains no hydrogen and a high fraction of $sp^3$ is determined by XPS. A dense Ti film deposited on H13 steel improves the corrosion resistance of the H13 steel and significant improvements of corrosion resistance were observed by implanting Ti, C in the film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.727-730
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• 2002

Chalcogenide glassy semiconductors(CGS) can be obtained by the melt quenching technique. We have investigated the thin film heterostructures : metal-chalcogenide glassy semiconductors, where metal is copper, and chalcogenide glassy semiconductors are glasses of the system As-Se. Cu/CGS film heterostructure were produced in the vacuum evaporator by the method of vacuum thermal evaporation. Doped films are very sensitive to external actions, and this property allows developing supersensitive precision sensors of temperature, humidity, illumination, and etc. based on them. Cu/CGS film has shown that resistance strongly depend on the temperature. The slop of temperature and resistance shows linear.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.669-675
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• 2002

CrN film coated by AIP method, improved the mechanical properties (Hardness, Roughness, wear and fatigue) of Ti-6Al-4V alloy. The properties were studied using GXRD, XPS, Hardness, Roughness, wear and fatigue testers. CrN thin film thickness was about 7.5$\mu\textrm{m}$ and grew with (111) orientation. Hardness of CrN thin film was very high (Hv 1390) and roughness of the surface layer was greatly improved (Ra=0.063$\mu\textrm{m}$) compared with matrix alloy (Ra=0.321$\mu\textrm{m}$). Such changes of hardness and roughness could be contributed to improving the wear resistance and fatigue life. Striation like pattern with dimples and voids, a typical fatigue fracture mode, was observed throughout the specimen.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1112-1115
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• 2005

In this study, we performed excimer laser activation on Phosphorus or Boron doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.

• Korea-Australia Rheology Journal
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• v.14 no.2
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• pp.71-76
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• 2002

Metal thin films, which are indispensable constituents of ULSI (Ultra Large Scale Integration) circuits, have been fabricated by physical or chemical methods. However, these methods have a drawback of using expensive high vacuum instruments. In this work, the fabrication of tungsten metal film by spin coating was investigated. First of all, inorganic peroxopolytungstic acid (W-IPA) powder, which is soluble in water, was prepared by dissolving metal tungsten in hydrogen peroxide and by evaporating residual solvent. Then, the solution of W-IPA was mixed with organic solvent, which was spin-coated on wafers. And then, tungsten metal films, were obtained after reduction procedure. By selecting an appropriate organic solvent and irradiating UV, the sheet resistance of the tungsten metal film could be remarkably reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• Journal of Advanced Marine Engineering and Technology
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• v.13 no.2
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• pp.64-77
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• 1989

In this study, the experiments were carried out for the purpose of establishment of aluminium cementation to steel surface by diffusible heat treatment after making the coated film onto the substrate by arc spray method. Also, the microstructure and mechanical properties of the cementation layer produced by this study were inspected for various heat treatment and spraying conditions. Main results obtained are as follow ; 1. The coating film characteristics which have excellent errosion-resistance, high temperature oxidation-resistance are obtained by aluminium penetration heat treatment after making the sprayed aluminum coating film onto the steel substrate. 2. Aluminium diffusion penetration takes place at higher temperature than 660.deg.C, and the more heat treatment time and the higher heat treatment temperature adopted, the deeper diffusion layer obtained. 3. Insert gas arc spraying using argon gas as the carrier gas higher improvement of mechanical property than that of compressed air environment. 4. The coating film characteristics appeared to be improvement of adhesive property, porosity plugging effect by heat treatment in air environment.