• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.92.1-92.1
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• 2007

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.11-12
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• 2008

최근 LSI speed의 고속화에 따라, SSN (Simultaneous Switching Noise)이 매우 큰 문제가 되고 있다. 이에 PDN에 대한 많은 해결책들이 제시되고 있으나 가장 저비용 고효율을 지향할 수 있는 방법이 현재 사용되고 있는 유기기판에 Capacitor를 내장하여 로 사용하는 방법이다. Decoupling capacitor를 두께가 밟은 유기기판에 구현하기 위해서는 유전율이 큰 물질을 사용하는 것이 좋은데 본 연구에서는 $BaTiO_3$를 epoxy 에 혼합하여 10um 두께의 필름으로 제작한 후 유기기판 제조 공정에 사용하여 유기기판을 구현하였다. 이렇게 구현된 capacitor 내장 유기기판을 2 stub의 간단한 회로를 구현하여 유전율 등을 측정하였으며, 고주파 전산모사를 통하여 capacitor의 용량 변화에 따른 고주파 특성의 변화를 연구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2012년도 전력전자학술대회 논문집
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• pp.55-56
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• 2012

In general, a power decoupling method using electrolytic capacitor is used to solve a problem that appears 120[Hz] ripple of grid at the PV module output. But electrolytic capacitor has a effect on the short lifetime and low reliability of PV system. Therefore, studies which replace the large electrolytic capacitor with small film capacitor have been researched in resent years. This paper proposes flyback inverter which can be replaced with film capacitor by connecting the circuit implementing zero voltage switching in PV side. The proposed system is validated by PSIM simulation.

• 한국재료학회지
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• 제17권2호
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• pp.81-85
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• 2007

Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.70-70
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• 2002

• 마이크로전자및패키징학회지
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• 제8권4호
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• pp.59-65
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• 2001

경화 전 상온 보관성이 우수하며 넓은 면적에 균일한 두께와 균일한 유전특성의 커패시터를 쉽게 형성할 수 있는 epoxy/$BaTiO_3$composite커패시터 필름을 제조하였다. 이 필름은 필름 형성특성과 가공성, 그리고 상온 보관성이 우수한 에폭시계 이방성 전도 필름(Anisotropic Conductive Film: ACF)용으로 개발된 레진을 기본으로 하고, 유전상수를 높이기 위한 충진제로 2종류의 $BaTiO_3$분말을 사용하였다. X선 회절을 통하여 두 분말의 결정구조와 이에 따른 유전상수의 변화를 살펴보았으며, 점포 측정을 통해 분산제의 양을 정하였다. 필름의 경화온도와 적정한 경화제의 양을 결정해주기 위해 differential scanning calorimeter (DSC)와 커패시터의 특성 분석을 통해 경화제 양에 따른 필름 및 커패시터 특성에 미치는 영향을 살펴보았다. 이 필름을 이용하여 두께 7 $\mu\textrm{m}$에서 10 nF/$\textrm{cm}^2$ (이때의 유전상수는 80)의 높은 전기용량을 가진 우수한 커패시터를 성공적으로 제작하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.640-643
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• 2008

In this work, a novel tunable MIM capacitor with the meshed electrode is proposed first in order to improve the tunability characteristics using fringe fields. The capacitors were fabricated on a low-resistivity Si substrate employing lead zinc niobate (PZN) thin film dielectric. The fabricated capacitor with the meshed electrode, whose line width and spacing was $2.5{\mu}m$, achieved the effective capacitance tunability of 31 % that is higher value of 18.5 % than that of the conventional capacitor with the rectangular-type electrode.

• 산업기술연구
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• 제32권A호
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• pp.115-118
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• 2012

Recently, there are a lot of papers in order to replace the electrolytic capacitor into the film capacitor in output of PFC(Power Factor Correction). However, the film capacitor, which has capacitance of low values, causes a large ripple voltage in output of PFC. The LED drivers are connected series in the output of PFC and affected by the magnitude of voltage ripple. In this paper, we have compared the fixed frequency method with the variable frequency for the constant-current control and propose the control method to avoid the sub-harmonic oscillation in the variable input voltage. An 80W PFC, using film capacitors instead of electrolytic capacitors, and LED driver has been built and compared the fixed frequency control method with the variable frequency control method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.