• Journal of Positioning, Navigation, and Timing
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• v.8 no.4
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• pp.139-152
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• 2019

The design of new navigation signals is a key factor in building new satellite navigation systems and/or modernizing existing legacy systems. Navigation signal design involves selecting candidate groups and evaluating and analyzing their signal performances. This process can be easily performed through software simulation especially at the beginning of the development phase. The analytical signal performance analysis software introduced in this study is implemented based on equations between the signal design parameters of Radio Navigation Satellite Service (RNSS) and the navigation signal figures-of-merit (FoMs). Therefore, this study briefly summarizes the RNSS signal design parameters and FoMs before introducing the developed software. After that, we explain the operating sequence of the implemented software including the Graphical User Interface (GUI), and calculate the FoMs of an example scenario to verify the feasibility of the software operations.

• Journal of the Optical Society of Korea
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• v.15 no.3
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• pp.305-309
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• 2011

We present an efficient design approach for a plasmonic slot waveguide using a genetic algorithm. The analyzed structure consists of a nanometric slot in a thin metallic film embedded within a dielectric. To achieve high confinement without long propagation length, the thickness and width of the slot are optimally designed in order to optimize the figures of merit including mode confinement and propagation length. The optimized design is based on the finite element method and enhances the guiding and focusing of light power propagation.

• Journal of the Optical Society of Korea
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• v.14 no.3
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• pp.277-281
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• 2010

We propose a design and optimization method for a dielectric-loaded surface plasmon polariton waveguide using a genetic algorithm. This structure consists of a polymer ridge on top of two layers of substrate and gold film. The thickness, width and refractive index of the ridge are designed to optimize the figures of merit including mode confinement and propagation length. The modal analysis combined with the effective index method shows that the designed waveguide exhibits a fundamental propagation mode with high mode confinement while ensuring that the propagation loss remains relatively low.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.513-516
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• 2010

In this work, a study is presented of the static characteristics of 4H-SiC DMOSFETs obtained by adjustment of the p-base region. The structure of this MOSFET was designed by the use of a device simulator (ATLAS, Silvaco.). The static characteristics of SiC DMOSFETs such as the blocking voltages, threshold voltages, on-resistances, and figures of merit were obtained as a function of variations in p-base doping concentration from $1\;{\times}\;10^{17}\;cm^{-3}$ to $5\;{\times}\;10^{17}\;cm^{-3}$ and doping depth from $0.5\;{\mu}m$ to $1.0\;{\mu}m$. It was found that the doping concentration and the depth of P-base region have a close relation with the blocking and threshold voltages. For that reason, silicon carbide DMOSFET structures with highly intensified blocking voltages with good figures of merit can be achieved by adjustment of the p-base depth and doping concentration.

• Applied Science and Convergence Technology
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• v.25 no.5
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• pp.88-91
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• 2016

The $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO systems at temperature of $1250^{\circ}C$ for 4 hours was successful synthesized. In this study, PbO-doped $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$ systems with non-linear behaviors showed ordering-degree dependence at the low temperature range were prepared using the columbite precursor method. And the characteristic of remnant polarization vs. electric field were analyzed. The pyroelectric, dielectric and piezoelectric properties of partially disordered $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO solid solutions were studied as a function of temperature, frequency, and electric field. It showed distinct features of temperature dependent of pyroelectric coefficient, spontaneous polarization and dielectric constant at about $50^{\circ}C$. The figure of merit was calculated as pyroelectric coefficient, dielectric constant and dissipation factor. It was found that the high voltage responsivity FV, high detectivity FD were $0.0373m^2/C$ and $0.6735{\times}10^{-4}Pa{-1/2}$, respectively, in the $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+3.0 wt%PbO system.

• Journal of Positioning, Navigation, and Timing
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• v.12 no.3
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• pp.229-236
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• 2023

As the importance and dependency of the positioning, navigation, and timing (PNT) information provided by the radio navigation satellite service (RNSS) increases, the vulnerability of RNSS to jamming can lead to significant risks. The signal design under the consideration of anti-jamming performance helps to provide service which is robust to jamming environment. Therefore, it is necessary to evaluate the jamming robustness performance during the design of new signals. In this paper, we introduce figures-of-merit (FoMs) that can be used for an anti-jamming performance analysis of designed signals of interest. We then calculate the FoMs, such as the quality factor (Q factor), tolerable jamming-to-signal ratio (tolerable J/S), and range to jammer (d) for legacy RNSS signals and analyze the results. Finally, based on the results of the analysis, we derive waveform design conditions to obtain good anti-jamming performance. As a result, this paper shows that the waveforms with wide bandwidth leading to good spectral efficiency provide strong anti-jamming performance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.647-654
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• 2013

The design and analysis of analog circuit application on CMOS technology are a challenge in deep sub-micrometer process. This paper is a study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Gate Stack and the channel engineering Single Halo (SH), Double Halo (DH). Four different structures have been analysed keeping channel length constant. The short channel parameters and different sub-threshold analog figures of merit (FOMs) are analysed. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application.

• Mass Spectrometry Letters
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• v.8 no.4
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• pp.79-89
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• 2017

Ion mobility mass spectrometry (IM-MS) combines the advantages of ion mobility spectrometry (IMS) and MS for effective gas-phase ion analysis. Separation of ions based on their mobilities prior to MS can be performed without a great loss in other analytical figures of merit, and the extra dimension of analysis offered by IM can be beneficial for isomer and complex sample analyses. In this review, basic principles of IMS and IM-MS are described in addition to an introduction to various IMS techniques and commercial IM-MS instruments. The nature of collision cross-section (${\Omega}_D$), an important parameter determining the transport properties of ions in IMS, is also explained in detail.

• ETRI Journal
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• v.29 no.6
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• pp.785-793
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• 2007

In this paper, we present an integrated rail-to-rail fully differential operational transconductance amplifier (OTA) working at low-supply voltages (1.5 V) with reduced power consumption and showing high DC gain. An embedded adaptive biasing circuit makes it possible to obtain low stand-by power dissipation (lower than 0.17 mW in the rail-to-rail version), while the high DC gain (over 78 dB) is ensured by positive feedback. The circuit, fabricated in a standard CMOS integrated technology (AMS 0.35 ${\mu}m$), presents a 37 V/${\mu}s$ slew-rate for a capacitive load of 15 pF. Experimental results and high values of two quality factors, or figures of merit, show the validity of the proposed OTA, when compared with other OTA configurations.