• Transactions on Electrical and Electronic Materials
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• 제10권5호
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• pp.165-168
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• 2009

Transparent and conducting ITO/Cu/ITO multilayered films were deposited by magnetron sputtering on unheated polycarbonate (PC) substrates. The thickness of the Cu intermediate film was varied from 5 to 20 nm. Changes in the microstructure and optoelectrical properties of ITO/Cu/ITO films were investigated with respect to the thickness of the Cu intermediated layer. The optoelectrical properties of the films were significantly influenced by the thickness of the Cu interlayer. The sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm films had a sheet resistance of $36{\Omega}$/Sq. and an optical transmittance of 67% (contain substrate) at a wavelength of 550 nm, while the ITO 50 nm/Cu 20 nm/ITO 30 nm films had a sheet resistance of $70{\Omega}$/Sq. and an optical transmittance of 36%. The electrical and optical properties of ITO/Cu/ITO films were determined mainly by the Cu film properties. From the figure of merit, it is concluded that the ITO/Cu/ITO films with a 5 nm Cu interlayer showed the better performance in transparent conducting electrode applications than the conventional ITO films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.794-797
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• 2004

The object of investigation is represented by PbxSrl-xTiO3(PST) thin films, which were fabricated by the alkoxide-based sol-gel method on Pt/Ti/SiO2/Si substrate. We have investigated both structural and dielectric properties of PST thin films aimed to tunable microwave device applications as a function of Pb/Sr ratio. PST thin films showedtypical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films were found as strongly dependent on Pb/Sr composition ratio. Increasing of Pb content leads to simultaneous increasing of both dielectric constant and dielectric loss characteristics of PST films. The figure of merit (FOM) Parameter (FOM : (%) tunability / tan (%)) reached a maximal value of 27.5 corresponding to Pb/Sr ratio of 40/60. The tunability increased with increasing Pb content. The dielectric constants, dielectric loss and tunability of the PST thin films at Pb/sr ratio of 40/60 measured at 100 kHz were 335, 0.0174 and 47.89 %, respectively.

• 열처리공학회지
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• 제29권6호
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• pp.272-276
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• 2016

Al doped ZnO (AZO) single layer and AZO/Ag bi-layered films were deposited on the glass substrates by radio frequency and direct current magnetron sputtering and then the effect of Ag buffer layer on the electrical and optical properties of the films was investigated. The thicknesses of AZO upper layer was kept as 100 nm, while Ag buffer layer was varied from 5 to 15 nm. The observed results mean that opto-electrical properties of the AZO films is influenced with Ag buffer layer and AZO film with 10 nm thick Ag buffer layer show the higher opto-electrical performance than that of the AZO single layer film prepared in this study.

• International Journal of Air-Conditioning and Refrigeration
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• 제6권
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• pp.124-135
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• 1998

A thermodynamic cycle analysis is performed for refrigerator-precooled Linde-Hampson hydrogen liquefiers, including catalysts for the ortho-to-para conversion. Three different configurations of the liquefying system, depending upon the method of the o-p conversion, are selected for the analysis. After some simplifying and justifiable assumptions are made, a general analysis program to predict the liquid yield and the figure of merit (FOM) is developed with incorporating the commercial computer code for the thermodynamic properties of hydrogen. The discussion is focused on the effect of the two primary design parameters - the precooling temperature and the high pressure of the cycle. When the precooling temperature is in a range between 45 and 60 K, the optimal high pressure for the maximal liquid yield is found to be about 100 to 140 bar, regardless of the ortho-to-para conversion. However, the FOM can be maximized at slightly lower high pressures, 75 to 130 bar. It is concluded that the good performance of the precooling refrigerator is significant in the liquefiers, because at low precooling temperatures high values of the liquid yield and the FOM can be achieved without compression of gas to a very high pressure.

• 열처리공학회지
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• 제29권5호
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• pp.216-219
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• 2016

$SnO_2$ single layer films (100 nm thick) and 2 nm thick Ni intermediated $SnO_2$ films were deposited on glass substrate by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni interlayer on the electrical and optical properties of the films were investigated. As deposited $SnO_2$ single layer films show the optical transmittance of 82.6% in the visible wavelength region and a resistivity of $6.6{ \times}10^{-3}{\Omega}cm$, while $SnO_2/Ni/SnO_2$ trilayer films show a lower resistivity of $2.7{ \times}10^{-3}{\Omega}cm$ and an optical transmittance of 76.3% in this study. Based on the figure of merit, it can be concluded that the intermediate Ni thin film effectively enhances the opto-electrical performance of $SnO_2$ films for use as transparent conducting oxides in flexible display applications.

• 항공우주시스템공학회지
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• 제15권4호
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• pp.11-20
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• 2021

The estimation of hovering flight time of multicopters using the battery power propulsion system is important for the development and design of the aircraft and its operation. For a given operational weight, the maximum possible battery weight can be decided using both a conventional energy density method and a new Peukert law. In the present study, the hovering flight time is predicted using both methods. The specific data of multicopters in the published literatures were employed for the computation of the hovering flight time. The results were validated with the measured data. The effect of figure of merit of propeller, battery discharging process on the hovering flight time was evaluated, Finally, the effect of the battery cell and package connection types on the hovering time was investigated. It was found that the combination of serial battery cell connections and parallel package connection is the bast in the endurance maximization aspect. As the cell number increases in a package, the hovering flight time is increased. There exists the max. battery ratio for the given takeoff gross weight.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.673-681
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• 2014

In this paper, a novel low specific on-resistance SOI LDMOS Device with P+P-top layer in the drift region is proposed and investigated using a two dimensional device simulator, MEDICI. The structure is characterized by a heavily-doped $P^+$ region which is connected to the P-top layer in the drift region. The $P^+$ region can modulates the surface electric field profile, increases the drift doping concentration and reduces the sensitivity of the breakdown voltage on the geometry parameters. Compared to the conventional D-RESURF device, a 25.8% decrease in specific on-resistance and a 48.2% increase in figure of merit can be obtained in the novel device. Furthermore, the novel $P^+P$-top device also present cost efficiency due to the fact that the $P^+$ region can be fabricated together with the P-type body contact region without any additional mask.

• 한국재료학회지
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• 제19권9호
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• pp.499-503
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• 2009

Transparent ITO films were deposited on a polycarbonate substrate with RF magnetron sputtering in a pure argon (Ar) and oxygen ($O_2$) gas atmosphere, and then post deposition electro annealed for 20 minutes in a $4{\times}10^{-1}$ Pa vacuum. Electron bombardment with an accelerating voltage of 100 V increased the substrate temperature to $120^{\circ}C$. XRD analysis of the deposited ITO films did not show any diffraction peaks, while electro annealed films indicated the growth of crystallites on the (211), (222), and (400) planes. The sheet resistance of ITO films decreased from 103 to $82{\Omega}/\square$. The optical transmittance of ITO films in the visible wavelength region increased from 85 to 87%. Observation of the work function demonstrated that the electro-annealing increased the work function of ITO films from 4.4 to 4.6 eV. The electro annealed films demonstrated a larger figure of merit of $3.0{\times}10^{-3}{\Omega}^{-1}$ than that of as deposited films. Therefore, the electro annealed films had better optoelectrical performances than as deposited ITO films.

• 설비공학논문집
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• 제22권3호
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• pp.165-170
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• 2010

Experiments have been performed to investigate the key parameters determining the performance of thermoelectric power generation. The experimental results obtained show that the power output significantly increases with the temperature difference between cold and hot sides of thermoelectric generator. However, the effect of the hot side temperature under the identical temperature difference on the overall performance of a thermoelectric generator is meager. The conversion efficiency defined as the ratio of the power generated to the heat absorbed at the hot side increases with the temperature difference. The behavior of the thermoelectric generator is shown to be consistent with the theoretical analysis. The optimum current giving the maximum conversion efficiency and the maximum conversion efficiency are linearly increased with the temperature difference.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.776-779
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• 2004

The dielectric and electrical characteristics of Ce doped (Ba0.6Sr0.4)TiO3 (BST) thin films were investigated as a function of Ce content. Both atomic force microscopy (AFM) and x-ray diffraction (XRD) analysis showed that increasing the Ce doping ratio causes the decrease in grain size while the surface remains smooth and crack-free. The dielectric properties of the Ce doped BST films were found to be strongly dependent on the Ce contents. The dielectric constant and dielectric loss of the BST films decreased with increasing Ce content. However, it was also found that, compared with undoped films, the increase of Cecontent improves the leakage-current characteristics. The improvement of the electrical properties of Ce-doped BST films may be related to the decrease in the concentration of oxygen vacancies. The figure of merit (FOM) reached the maximum value of 48.9 at the 1 mol % of Cedoping. The dielectric constant, loss factor, and tunability of the 1 mol% Ce doped Ba0.6Sr0.4TiO3 thin films were 320, 0.011, and 46.3%, respectively.