• 한국자원식물학회지
• /
• 제22권3호
• /
• pp.220-226
• /
• 2009

An experiment was conducted to find out among 9 trap settings the most appropriate site for trap placement in the Brinjal field based on Brinjal shoot and fruit borer trapping efficiency, shoot and fruit infestation, healthy and total fruit yield, and BCR. The efficiency of different trap setting positions varied significantly. Trapping efficiency observed the $T_{1}$ ensured the minimum shoot and fruit infestation 10.02% and 20.95%, respectively, minimum infested fruit yield (4.75 ton/ha), maximum healthy and total fruit yield (26.72 and 31.47 ton/ha) and the maximum BCR (1.70), which was followed by $T_{2}$ and $T_{4}$. The minimum trapping efficiency of $T_{9}$ treatment led the maximum shoot and fruit infestation 13.89 and 29.26%, respectively, maximum infested fruit yield (7.59 ton/ha), minimum healthy and total fruit yield (17.74 and 25.32 ton/ha) and the minimum BCR (1.00). A correlation between the number of BSFB adults trapped from the most efficient trap setting and the shoot and fruit infestation recorded and found a linear positive correlation between number of BSFB adults trapped and shoot infestation (r = 0.781) and fruit infestation (r = 0.810). The effect of pheromone trap positions observed in this study may be attributed to the easy accessibility of the lures and traps, when they are placed at the canopy.

• 생명과학회지
• /
• 제10권4호
• /
• pp.403-407
• /
• 2000

잎들깨 재배지에서 직$\cdot$간접적으로 피해를 입히는 뿌리썩이선충(Pratylenchus spp.)의 생물학적 방제를 위해서 3종의 선충포식성 곰팡이, Arthrobotrys oligospora, A. conoides와 A. dactyloides의 선충방제 효과를 포장시험을 통하여 검정하였다. 3종의 Arthrobotrys는 1998년 잎들깨 재배지 토양에서 분리하였으며, 이들 곰팡이들은 한천배지상에서 끈끈이그물 또는 수축성 올가미와 같은 특이한 균사구조를 형성하여 뿌리썩이선층을 포획하는 것으로 관찰하였다. 야외포장 실험결과, 대조구에서는 40일 경과 후 식물기생성 선충 및 뿌리썩이선충의 밀도가 약 3.5배 증가한 반면 선충포식성 곰팡이 A. oligospora와 A. conoides 처리구에서는 단지 선충의 밀도가 큰 증감없이 접종 전의 수준을 유지하는 효과를 보였다. 그러나 A. dactyloides 처리구에서는 식물기생성 선충의 밀도를 약 65%, 뿌리썩이 선충의 밀도를 약 53% 감소시켜, 선충포식성 곰팡이의 생물학적 방제효과가 높게 나타났다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.167-168
• /
• 2007

$CdIn_2S_4$ (110) films were grown on semi-insulating GaAs (100) by a hot wall epitaxy method. Using photocurrent (PC) measurement, the PC spectra in the temperature range of 30 and 10 K appeared as three peaks in the short wavelength region. It was found that three peaks, A-, B-, and C-excitons, correspond to the intrinsic transition from the valence band states of ${\Gamma}_4(z),\;{\Gamma}_5(x),\;and\;{\Gamma}_5(y)$ to the exciton below the conduction band state of ${\Gamma}_1(s)$, respectively. The 0.122 eV crystal field splitting and the 0.017 eV spin orbit splitting were obtained. Thus, the temperature dependence of the optical band gap obtained from the PC measurement was well described by $E_g$(T)=2.7116eV - $(7.65{\times}10^{-4}\;eV/K)T^2$/(425+T). But, the behavior of the PC was different from that generally observed in other semiconductors. The PC intensities decreased with decreasing temperature. This phenomenon had ever been reported at a PC experiment on the bulk crystals grown by the Bridgman method. From the relation of log $J_{ph}$ vs 1/T, where $J_{ph}$ is the PC density, two dominant levels were observed, one at high temperatures and the other at low temperatures. Consequently, the trapping centers due to native defects in the $CdIn_2S_4$ film were suggested to be the causes of the decrease in the PC signal with decreasing temperature.

• 한국정보전자통신기술학회논문지
• /
• 제16권4호
• /
• pp.180-186
• /
• 2023

본 논문은 4세대 VNAND 공정으로 만들어진 고전압 SiO2 절연층 nMOSFET의 n⁺ 및 p⁺ poly-Si 게이트에서의 positive bias temperature instability(PBTI) 열화에 대해 비교하고 각각의 메커니즘에 대해 분석한다. 게이트 전극 물질의 차이로 인한 절연층의 전계 차이 때문에 n⁺/nMOSFET의 열화가 p⁺/nMOSFET의 열화보다 더 클 것이라는 예상과 다르게 오히려 p⁺/nMOSFET의 열화가 더 크게 측정되었다. 원인을 분석하기 위해 각각의 경우에 대해 interface state와 oxide charge를 각각 추출하였고, 캐리어 분리 기법으로 전하의 주입과 포획 메커니즘을 분석하였다. 그 결과, p⁺ poly-Si 게이트에 의한 정공 주입 및 포획이 p⁺/nMOSFET의 열화를 가속시킴을 확인하였다.

• 한국안전학회지
• /
• 제9권1호
• /
• pp.56-60
• /
• 1994

In this study, Cuttent vs. Temperature characteristics of polyethylene with high-voltage treatment and crystallinity have been studied. The current curve( $I_{th}$) shows two peaks at 85 ($^{\circ}C$) and 50($^{\circ}C$), respectively. Trapping of carriers Proceeds during the high-field treatment, and it Is clear that 1th arises from the drift of carriers under the external voltage( $V_{b}$). From the results of TSC of BDPE and LDPE. It is realized that the traps are relation to the crystallinity.y.y.

• 한국재료학회지
• /
• 제24권3호
• /
• pp.135-139
• /
• 2014

To obtain the transistor with ambipolar transfer characteristics, IGZO/SiOC thin film transistor was prepared on SiOC with various polarities as a gate insulator. The interface between a channel and insulator showed the Ohmic and Schottky contacts in the bias field of -5V ~ +5V. These contact characteristics depended on the polarities of SiOC gate insulators. The transfer characteristics of TFTs were observed the Ohmic contact on SiOC with polarity, but Schottky contact on SiOC with low polarity. The IGZO/SiOC thin film transistor with a Schottky contact in a short range bias electric field exhibited ambipolar transfer characteristics, but that with Ohmic contact in a short range electric field showed unipolar characteristics by the trapping phenomenon due to the trapped ionized defect formation.

• 한국전기전자재료학회논문지
• /
• 제17권7호
• /
• pp.788-792
• /
• 2004

The Electromagnetic properties in BiPbSrCaCuO superconductor was studied. In the measurement of current-voltage characteristics, a voltage across the superconducting sample was observed on applying an external magnetic field. The voltage continues to appear the removal of the magnetic field. The appearance of the voltage is ascribed to the trapping of magnetic flux. Depanding on the direction of appied magnetic flux less than $2.5\times{10}^-5$ T, the voltage in the magnetized sample increases or decreases. It is considered that mechanism of voltage occurrence can be explained by applying filament model.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.520-521
• /
• 2005

To observe the orientation of carbon nanotubes (CNTs) dispersed in nematic liquid crystal (NLC), CNT-doped homogeneously-aligned NLC cells driven by in-plane field was fabricated. The CNTs were aligned with a LC director in the initial state, whereas the CNTs disturbed the LC director above critical ac field. We observed motional textures in the form of vertical stripes in the local area between electrodes, which were associated with a deformation of the LC director orientation. This suggests that CNTs start to vibrate three dimensionally with translational motion. The hysteresis studies of voltage-dependent transmittance under dc electric field show that the amount of residual dc is greatly reduced due to ion trapping by CNT.

• 멤브레인
• /
• 제4권2호
• /
• pp.96-105
• /
• 1994

이 논문은 거대전하고분자의 막전달 현상을 위한 이론적 모델을 연구하는데 있다. 전기적 힘에 의한 전하고분자 물질의 형상은 빠르게 곧게 뻗으면서 진행되며, 곧게 뻗는 시간과 길이는 막 전달의 동적현상을 이해하는데 도움을 주고 있다. 빠르게 곧게 뻗을 때, 전하고분자의 두 끝이 전기힘 방향으로 동시에 끌리는 현상이 일어난다. 이같은 형식의 이해는 거대전하고분자의 막분리를 이해하는데 도움을 주고 있다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제5권2호
• /
• pp.113-119
• /
• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.