• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.105-108
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• 2005

The Pb(Zr,Ti)O$_3$ thin films were fabricated with Pb(La,Ti)O$_3$ buffers in-situ onto Pt/Ti/SiO$_2$/Si substrates by pulsed laser deposition method. We have observed the increase of the remanent polarization using PLT buffers. The remanent polarization value of 33.4 $\mu$C/$\textrm{cm}^2$ and the coercive field value of 66.4 kV/cm were obtained when the PLT tufter was deposited for 15 seconds. Enhancement of the polarization is resulted from the enhanced orientation of PZT thin film because of the PLT buffet layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.72-72
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• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals have been studied intensely. Especially, graphene which have unprecedented performance fulfillments in versatile research fields leads a parade of 2D atomic crystals. In this talk, I will introduce the electrical characterization and applications of graphene for prominently electrical transistors realization. Even the rising 2D atomic crystals such as hexagonal boron nitride (h-BN), molybdenum disulfide (MoS2) and organic thin film for field effect transistor (FET) toward competent enhancement will be mentioned.

• Journal of the Korean Magnetic Resonance Society
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• v.3 no.2
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• pp.71-83
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• 1999

The dynamics of the dipolar demagnetizing field is investigated by numerical simulation. The effects of radiation damping, molecular diffusion, and relaxation processes on the dipolar demagnetizing field are examined in terms of the modulation pattern of the z-magnetization and the signal intensity variation. Simulations for multi-components suggest applications for sensitivity enhancement in favorable conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.764-767
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• 2007

We investigated the field emission of single carbon nanotube including the anode effect by calculating the tunneling probability of an electron. The experimental results from this study were in agreement with our theoretical calculations. The constant enhancement factor was calculated using an approximation of the potential barrier.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.424-428
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• 2003

The microstructure and field emission properties of carbon nanotubes(CNT) grown by Ni-catalytic chemical vapor deposition(CVD) were investigated. CVD-grown CNT had a high density of curved shape with randomly oriented. It was found that an increase in electric field caused an increase in field emission current and field emission sites of CNT. The maximum field emission current density was measured to be 3.6 ㎃/$\textrm{cm}^2$ at 2.5 V/$\mu\textrm{m}$, while the brightness of 56 cd/$\textrm{cm}^2$ was observed for the CNT-grown area of 0.8 $\textrm{cm}^2$ from a phosphor screen. Field emission current at constant electric field gradually decreased initially and then stabilized with time.

• Proceedings of the Korean Magnestics Society Conference
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• 1998.05a
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• pp.44-45
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• 1998

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.189-190
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.252.1-252.1
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• 2008

• Journal of Magnetics
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• v.17 no.4
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• pp.308-315
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• 2012

Experimental investigations of the magnetization, magnetostriction and magnetoelectric (ME) effects were performed on sandwich - type Metglas/PZT/Metglas laminate composites. The results have been analyzed by taking into account the demagnetization contribution. The study has pointed out that the magnetic flux concentration is strongly improved in piezomagnetic laminates with a narrower width leading to a significant enhancement of the ME effects. The piezomagnetic laminates with the optimal area dimension were integrated to form a 2-D geomagnetic device, which simultaneously can precisely detect the strength as well as inclination of the earth's magnetic field. In this case, a magnetic field resolution of better than $10^{-4}$ Oe and an angle precision of ${\pm}0.1^{\circ}$ were determined. This simple and low-cost geomagnetic-field device is promising for various applications.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.179-183
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• 2012

The random dopant fluctuation (RDF) effects of tunneling field-effect transistors (TFETs) have been observed by using atomistic 3-D device simulation. Due to extremely low body doping concentration, the RDF effects of TFETs have not been seriously investigated. However, in this paper, it has been found that the randomly generated and distributed source dopants increase the variation of threshold voltage ($V_{th}$), drain induced current enhancement (DICE) and subthreshold slope (SS) of TFETs. Also, some ways of relieving the RDF effects of TFETs have been presented.