• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.151-154
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• 2008

The field emission lamps have the advantages to their cold cathode-characteristic and the eco-friendly, We realized that the dual emitter system showed very simple structure which gate and cathode electrodes are formed on the same glass surface. In this paper, we reported the properties of dual emitters depended on variation of gate width and spacing for optimum panel structure. In combination of dual emitter structure and bi-polar driving, electron beam spreads more than normal gate structure or diode structure, and emission uniformity increased in dual emitter structure at 5"-diagonal.

• Journal of Information Display
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• v.2 no.3
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• pp.78-85
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• 2001

The growth of carbon nanotubes(CNTs) in anodic aluminum oxide(AAO) template and their application to a field emitter are described. AAO templates were fabricated by anodizing bulk aluminum and sputtered thin Al film on Nb-coated Si wafers. After Co catalyst had been electrochemically deposited into the bottom of the pores in AAO template, CNTs were grown by pyrolyzing $C_2H_2$. Depending on the reaction conditions, CNTs grew up to or over the top of the pores in AAO template with different structures. The morphology and structure of CNTs were observed with a scanning electron microscope and a transmission electron microscope. The diameter of CNTs strongly depended on the size of the pores in AAO template and the growing conditions. The electron field emission measurement of the samples resulted in the turn-on field of 1.9-2.2 $V/{\mu}m$ and the field enhancement factor of 2450-5200. The observation of high field enhancement factors is explained in terms of low field screening effect.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.1
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• pp.62-70
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• 1984

N+NPP+ HLEBSF (high low emitter back surface field) solar cells which have N+N high low junction in the emitter as well as N+PP+ BSF cells were designed and fabricated by using <111> oriented P type Si wafers with the resistivity of 10$\Omega$/$\textrm{cm}^2$ and the thickness of 13-15 mil. Physical parameters (impurity concentration, thickness) at each region of N+PP+ and N+NPP+ cell were made equally through same masks and simultaneous process except N region of HLEBSF cell to investigate the high low emitter junction effect for efficiency improvement. Under the light intensity of 100 mW/$\textrm{cm}^2$, total area (active area) conversion efficiency were typically 10.94% (12.16%) for N+PP+ BSF cells and 12.07% (13.41%) for N+N PP+ cells. Efficiency improvement of N+NPP+ cell which has high low emitter Junction structure is resulted from the suppression of emitter recombination current and the increasement of open circuit voltage (Voc) and short circuit current (Ish) by removing heavy doping effects occurring in N+ emitter region.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1591-1593
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• 2008

The tubular field emission lamp (FEL) was developed using a wire type carbon-nano-structure emitter called CNX The luminous efficiency of the tubular FEL (diode type, diameter: ${\varphi}15.5mm$, length: 200mm) has already achieved around 45lm/W and we expect to achieve over 60lm/W within the year.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.154-154
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• 2000

FED(Field emission display)의 FEAs(Field emitter arrays)에 형성되어 있는 micro-tip 은 tip 표면의 오염이나 진공내부의 잔류가스에 대단히 민감하다. 특히, emitter 물질의 일함수 및 겉모양 같은 기하학적 요소에 민감한 전계방출 소자의 특성상 tip 선단이 oxidation 될 경우 일함수가 증가하여 전자방출에 필요한 구동전압이 증가하고 전자 방출의 불균일성이 커지는 문제점이 발생한다. 이에 고진공의 동작 환경 및 FEAs 제작과정이나 공기의 노출에 발생하는 tip 표면의 오염물질 제거가 요구된다. 따라서 본 연구에서는 40$\times$40mm2 FEAs에 laser power, scan speed을 달리하며 laser(cw Nd-YAG, 1064nm)을 조사하였다. laser cleaning 효과를 보기 위해 laser irradiation 전, 후에 진공도 5$\times$10-7torr irradiation 후에 emitter tip의 뚜렷한 기하학적 모양의 변화를 볼 수는 없었지만, I-V 특성이 향상 되는 것을 볼 수 있었다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.521-524
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• 1999

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.8-15
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• 2007

In this paper, we fabricated the field emitter display using oxidized porous polysilicon(OPPS). Their field emission characteristics and the brightness were investigated for each pixel. The OPPS emitter was operated to each pixel using passive matrix for application of large panel display. We set up the proper thickness and width of upper electrode. The fine structure of OPPS was analyzed and the field emission characteristics of each pixel were investigated. As a result of field emission characteristics of different upper electrode thickness and width, we confirmed that the most efficient thickness was 2nm/7nm and increased the emission efficiency over the width of 2.5 mm. Even if field emission characteristics of each pixel was a little different but we confirmed the same leakage current and emission current, emission efficiency at each pixel. The leakage current and emission current was decreased according to the time increases but all of each pixel were uniformly decreased. We confirmed that the brightness of each pixel was not different and the brightness of OPPS field emitter was 700 cd/m2 at the Vps=20 V. Accordingly, the patterned OPPS field emitter can be applied to high quality field emission display devices.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1312_1313
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• 2009

In this study the fabrication technique of the planner field emission device structure with a DLC layer were studied. The bottom Mo electrode using electrochemical method on the DLC layer deposited using assist sputtering.

• Journal of Information Display
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• v.1 no.1
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• pp.63-69
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• 2000

In order to improve both the level and the stability of electron emission, Mo and Co silicides were formed from Mo mono-layer and Ti/Co bi-layers on single crystal silicon field emitter arrays (FEAs), respectively. Using the slope of Fowler-Nordheim curve and tip radius measured from scanning electron microscopy (SEM), the effective work function of Mo and Co silicide FEAs were calculated to be 3.13 eV and 2.56 eV, respectively. Compared with silicon field emitters, Mo and Co silicide exhibited 10 and 34 times higher maximum emission current, 10 V and 46 V higher device failure voltage, and 6.1 and 4.8 times lower current fluctuation, respectively. Moreover, the emission currents of the silicide FEAs depending on vacuum level were almost the same in the range of $10^{-9}{\sim}10^{-6}$ torr. This result shows that silicide is robust in terms of anode current degradation due to the absorption of air molecules.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.309-312
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• 2002

Triode field emitters with planar-carbon-nanopaticle (CNP) cathodes were successfully fabricated using the conventional photolithography and the hotfilament chemical vapor deposition. Electron emission from a CNP triode emitter with a 12-${\mu}m$-diameter gate hole started at the gate voltage of 45 V, and the anode current reached the level of ${\sim}120$ nA at the gate voltage of 60 V, respectively. For the quantitative analysis of the Fowler-Nordheim (F-N) type emission from a CNP triode emitter, we carried out 2dimensional numerical calculation of electrostatic potential using the finite element method. As it turned out, a radial variation of electric field was very important to account for the emission from a planar emitting layer. By assuming the graphitic work function of 5 eV for CNPs, we were able to extract a consistent set of F-N parameters, together with the radial position of emitting sites.