• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.867-869
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• 2003

Vacuum tube arrays (VTA) with a submicron dimension were fabricated by using anodic aluminum oxide (AAO) nano-templates. The field emission characteristics of Ni nanowires show a turn-on voltage in the range of 11.0-14.0 V and a field enhancement factor in the range of 560-2790. The distance between the tips of Ni nanowires and the anode was much smaller than that between the tips and the anode of conventional designs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.552-552
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• 2012

We fabricated reduced graphene oxide field-effect transistor (RGO-FET) on glass for highly sensitive temperature and IR detection. The device has the channels of RGO responsive to physical stimuli such as temperature and IR. The RGO sensing layers are fabricated from exfoliated graphene oxide sheets that are deposited to form a thin continuous network by electrostatic assembly. These graphene oxide networks are reduced toward reduce graphene oxide by exposure to a hydrazine hydrate vapor. To improve performance and eliminate interferences from oxygen and water vapor absorption to electrical properties of RGO-FET, the sensor devices were encapsulated by the tetratetracontane layer after annealing treatment. The device with encapsulation layer showed lower hysteresis, improved stability, and better repeatability. The temperature response of RGO-FET is examined by measuring changing the temperature, the device exhibited the high sensitivity and repeatability even with the temperature interval of 1 K. We also demonstrated that our devices have capability of IR sensing.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.7-10
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• 2011

High voltage (HV) integrated circuits are viable alternatives to discrete circuits in a wide variety of applications. A HV device generally used in these circuits is a lateral double diffused metal oxide semiconductor (LDMOS) transistor. Attempts to model LDMOS devices are complicated by the existence of the lightly doped drain and by the extension of the poly-silicon and the gate oxide. Several physically based investigations of the bias-dependent drift resistance of HV devices have been conducted, but a complete physical model has not been reported. We propose a new technique to model HV devices using both the BSIM3 SPICE model and a bias dependent resistor model (sub-circuit macro model).

• Journal of Magnetics
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• v.11 no.4
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• pp.170-181
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• 2006

Spin dependent tunneling has enormously activated the field of magnetism in general, and in particular spin transport studies, in the past ten years. Thousands of articles related to the subject have appeared with many fundamental results. Importantly, there is great interest in their potential for application. There was another surge of activity in this field since the past five years - created by the theoretical prediction of a large tunnel magnetoresistance that arises due to band symmetry matched coherent tunneling in epitaxial magnetic tunnel junctions with (001) MgO barrier and experimentally well demonstrated. This further development in the field has boosted the excitement in both fundamental science as well as the possibility of application in such as magnetic random access memory, ultra sensitive read heads, biosensors and spin torque diodes. This review is a brief coverage of the field highlighting the literature that deals with magnetic tunnel junctions having epitaxial MgO tunnel barriers.

• Bulletin of the Korean Chemical Society
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• v.24 no.12
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• pp.1827-1831
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• 2003

Field emission of carbon nanotubes (CNTs) fabricated by disproportionation of CO has been studied. CNTs fabricated on well-ordered Co nanowire arrays formed on the porous anodic aluminum oxide templates were well graphitized, uniform in diameter and aligned vertically with respect to the plane of the template, and showed a good field emission property. Very uniform emissions were observed from the CNTs fabricated at relatively low temperature, $500-600^{\circ}C$. Low fabrication temperature such as $500^{\circ}C$ could make it possible to fabricate CNTs on soda lime glass, a low-cost substrate, for display panel.

• Journal of Biosystems Engineering
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• v.42 no.4
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• pp.323-329
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• 2017

Purpose: Biocompatible capsules have recently been highlighted as a novel platform for delivering various components, such as drug, food, and agriculture pesticides, to overcome the current limitations of living systems, such as those in agriculture, biology, the environment, and foods. However, few active targeting systems using biocompatible capsules and physical forces simultaneously have been developed in the agricultural engineering field. Methods: Here, we developed an active targeting delivery platform that uses biocompatible alginate capsules and controls movements by magnetic forces for agricultural and biological engineering applications. We designed and fabricated large-scale biocompatible capsules, using custom-made nozzles ejecting alginate solutions for encapsulation. Results: To develop the active target delivery platforms, we incorporated iron oxide nanoparticles in the large-scale alginate capsules. The sizes of alginate capsules were controlled by regulating the working conditions, such as concentrations of alginate solutions and iron oxide nanoparticles. Conclusions: We confirmed that the iron oxide particle-incorporated large-scale alginate capsules moved actively in response to magnetic fields, which will be a good strategy for active targeted delivery platforms for agriculture and biological engineering applications, such as for the controlled delivery of agriculture pesticides and biocontrol agents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.79-80
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, $0.01{\sim}0.025\;{\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50%. The height of the fabricated oxide pattern ($1{\sim}3\;nm$) on SiC is similar to that of typically obtained on Si ($10^{15}{\sim}10^{17}\;cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. Whereas the simulated electric field on Si surface is constant ($5\;{\times}\;10^7\;V/m$), the electric field on SiC surface increases with increasing the doping concentration from ${\sim}10^{15}$ to ${\sim}10^{17}\;cm^{-3}$. We demonstrated that a specific electric field ($4\;{\times}\;10^7\;V/m$) and a doping concentration (${\sim}10^{17}\;cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• Korean Journal of Soil Science and Fertilizer
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• v.41 no.3
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• pp.184-189
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• 2008

To assess the relationship between Cd fraction in paddy soils and Cd in polished rice, soils and rice were analyzed at the 3 Cd contaminated paddy fields near closed mines. Major Cd fractions of A field were organically bound (62.6%) and Fe-Mn oxide bound (25.3%) forms. In case of B field, major Cd fractions of B1 field were carbonate bound (46.3%) and Fe-Mn oxide bound (31.6%) form whereas B2 field were residual (54.3%) and carbonate bound (21.8%) form, respectively. It showed a huge difference of Cd fraction each other. 0.1M HCl extractable Cd in soil was positively correlated with Cd in rice. Specially, the ratios of 0.1M HCl extractable Cd against total Cd content in soils were 13.7%, 2.6%, and 0.45% in A, B1, and B2 fields, respectively. These ratio were largely affected with Cd uptake to rice grain. Also, exchangable, Fe-Mn oxide bound, and carbonate bound form, which are partially bioavailable Cd fraction to the plant, were positively correlated with Cd in rice while organically bound and residual form was not correlated. Multiple regression equation was developed with Rice Cd = -0.02861 + 0.07456 FR 1(exchangeable) + 0.00252 FR 2(carbonate bound) + 0.001075 FR 3(Fe Mn oxide bound) - 0.00095 FR 4(organically bound) - 0.00348 FR 5(residual) ($R^2=0.7893^{***}$) considering Cd fraction in soils.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.171-175
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• 1996

Gate insulator for Si field emitter is usually formed by e-beam evaporation. However, the evaported oxide requires densification for a stable process and a reduction of gate leakage which results from its Si-rich and nonstoicheiometric structure. In this study, we have developed the process technology able to densify the evaporated oxide in H$_{2}$O ambient. Using this process, we have fabricted thefield emitter array with 625 emitters per pixel, of which gate hole diameter is 1.4.mu.m, for the pixel, anode current of 14.3.mu.A was extracted at a gate bias of 100V and gate leakage was about 0.27% of the total emission current.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.774-779
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• 1995

Process optimization experiments based on the Taguchi method were performed in order to set up the optimal process conditions for the contact oxide etching process module which was built in order to be attached to the cluster system of multi-processing purpose. In order to compare with Taguchi method, the contact oxide etching process carried out with different process parameters(CHF$_{3}$/CF$_{4}$ gas flow rate, chamber pressure, RF power and magnetic field intensity). Optimal etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. In this paper, as a final analysis of experimental results the optimal etching characteristics were obtained at the process conditions of CHF3/CF4 gas flow rate = 72/8 sccm, chamber pressure = 50 mTorr, RF power = 500 watts, and magnetic field intensity = 90 gauss.