• Korean Journal of Materials Research
• /
• v.26 no.7
• /
• pp.393-399
• /
• 2016

Flower-like nickel oxide (NiO) catalysts were coated on NiCrAl alloy foam using a hydrothermal method. The structural, morphological, and chemical bonding properties of the NiO catalysts coated on the NiCrAl alloy foam were investigated by field-emission scanning electron microscopy, scanning electron microscopy-energy dispersive spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy, respectively. To obtain flower-like morphology of NiO catalysts on the NiCrAl alloy foam, we prepared three different levels of pH of the hydrothermal solution: pH-7.0, pH-10.0, and pH-11.5. The NiO morphology of the pH-7.0 and pH-10.0 samples exhibited a large size plate owing to the slow reaction of the hydroxide ($OH^-$) and nickel ions ($Ni^+$) in lower pH than pH-11.5. Flower-like NiO catalysts (${\sim}4.7{\mu}m-6.6{\mu}m$) were formed owing to the fast reaction of $OH^-$ and $Ni^{2+}$ by increased $OH^-$ concentration at high pH. Thus, the flower-like morphology of NiO catalysts on NiCrAl alloy foam depends strongly on the pH of the hydrothermal solution.

• Korean Journal of Materials Research
• /
• v.24 no.3
• /
• pp.145-151
• /
• 2014

Solution-based Sb-doped $SnO_2$ (ATO) transparent conductive oxides using a low-temperature process were fabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological, electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order to investigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer, and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and optical transmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with two sol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperature process ($300^{\circ}C$) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATO thin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at $300^{\circ}C$C exhibited the superb electrical (${\sim}7.25{\times}10^{-3}{\Omega}{\cdot}cm$) and optical transmittance (~83.1 %) performances.

• Korean Journal of Materials Research
• /
• v.24 no.8
• /
• pp.393-400
• /
• 2014

NiO catalysts were successfully coated onto FeCrAl metal alloy foam as a catalyst support via a dip-coating method. To demonstrate the optimum amount of NiO catalyst on the FeCrAl metal alloy foam, the molar concentration of the Ni precursor in a coating solution was controlled, with five different amounts of 0.4 M, 0.6 M, 0.8 M, 1.0 M, and 1.2 M for a dip-coating process. The structural, morphological, and chemical bonding properties of the NiO-catalyst-coated FeCrAl metal alloy foam samples were assessed by means of field-emission scanning electron microscopy(FESEM), scanning electron microscopy-energy dispersive spectroscopy(SEM-EDS), X-ray diffraction(XRD), and X-ray photoelectron spectroscopy(XPS). In particular, when the FeCrAl metal alloy foam samples were coated using a coating solution with a 0.8 M Ni precursor, well-dispersed NiO catalysts on the FeCrAl metal alloy foam compared to the other samples were confirmed. Also, the XPS results exhibited the chemical bonding states of the NiO phases and the FeCrAl metal alloy foam. The results showed that a dip-coating method is one of best ways to coat well-dispersed NiO catalysts onto FeCrAl metal alloy foam.

• Korean Journal of Materials Research
• /
• v.23 no.10
• /
• pp.592-598
• /
• 2013

Graphene oxide powders prepared by two different drying processes, freeze drying and spray drying, were studied to compare the effect of the drying method on the physical properties of graphene oxide powder. The graphene oxide dispersion was prepared from graphite by chemical delamination with the aid of sulfuric acid and permanganic acid, and the dispersion was further washed and re-dispersed in a mixed solvent of water and isopropyl alcohol. A freeze drying method can feasibly minimize damage to the sample, but it requires a long process time. In contrast, spray drying is able to remove a solvent in a relatively short time, though this process requires exposure to a high temperature for a rapid evaporation of the solvent. The powders prepared by freeze drying and spray drying were characterized and compared by Raman spectroscopy, X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, and by an elemental analysis. The graphene oxide powders showed similar chemical compositions; however, the morphologies of the powders differed in that the graphene oxide prepared by spray drying had a winkled morphology and a higher apparent density compared to the powder prepared by freeze drying. The graphene oxide powders were reduced at $900^{\circ}C$ in an atmosphere of $N_2$. The effect of the drying process on the properties of the reduced graphene oxide was examined by SEM, TEM and Raman spectroscopy.

• Korean Journal of Materials Research
• /
• v.27 no.1
• /
• pp.48-52
• /
• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

• Polymer(Korea)
• /
• v.31 no.3
• /
• pp.177-183
• /
• 2007

In this study, nano-sized poly(vinyl acetate) (PVAc) particles containing lavender oil as a core material were prepared by using emulsification-diffusion method. Effects of experimental parameters on the characteristics and the release behavior were examined with a field emission- scanning electron microscope, an electrophoretic light scattering spectrophotometer, a visible spectrophotometer and a high performance liquid chromatography The resulting aromatic particles could be prepared in nano-sized globular shapes with the mean particle size of 224 nm by controlling the experimental conditions. From the evaluation of release properties of aromatic PVAc nanoparticles with or without PVA coating, it was found that the aromatic particles coated with PVA show more sustaining and stable release behaviors. Our research on aromatic PVAc nanoparticles could be applied for durable fragrant finishing for textiles, leather products and so on.

• Hwankyungkyoyuk
• /
• v.18 no.1 s.26
• /
• pp.120-133
• /
• 2005

This study investigated the changes of consciousness and ambivalent attitudes about the important environmental issues among the teachers who enrolled the environmental education training. Experimental and control groups were composed with 47 and 30 person, respectively. Environmental issues were constructions of sea-wall, nuclear power plant and dam. Cronbach alpha of the self-developed questionnaire was $0.6909{\sim}0.8992$. Score were made with 5 Likert scales for consciousness, and with semantic differential half scale for ambivalent attitudes. Almost teachers(94.0% and 97.1%) have above 10 years teaching career. Strangers in environmental program were 53.2%. After environmental training, teachers' consciousness was significantly changed to negative about the construction of sea-wall for the farm field and industry complex area(p=0.019), and about the construction of dam for disaster like flood(p=0.026), and for adverse effects of citizen by fog(p=0.042). They were also significantly changed to negative about the construction of nuclear power plant for economical energy(p=0.004)', no-emission of greenhouse gases(p=0.033)', 'alternative energy(p=0.000)', 'destruction of ecology(p=0.052)' and 'social fear(p=0.009)'. The consciousness of teachers who have the experience of environmental training, were significantly changed to negative about the construction of nuclear power plant. Scores of teachers' ambivalent attitudes were made lower in experimental than control group about the construction of sea-wall and nuclear power plant. After education training, they were made lower so much as -10.0% in control, but higher much as +4.4% in experimental, and severely higher much as 86.5% in teachers who had experienced the environmental training about construction of sea-wall. Their scores were made lower so much as -3.3% in control, but much as -6.4% in control.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.520-520
• /
• 2013

Lateral 구조를 갖는 탄소나노튜브 에미터 캐소드의 금속전극 선폭과 간격은 탄소나노튜브 에미터 밀도와 게이트에 인가되는 전계의 크기에 밀접한 관계가 있어 전계방출특성에 큰 영향을 나타내므로 조속한 상업화를 위해서는 최적화 연구가 요구된다. 따라서 본 연구에서는 금속전극의 선폭과 간격을 110/30, 80/30, 40/30과 120/20, 90/20, 20/20 ${\mu}m$로 각각 변화시켜 4.6인치 탄소나노튜브 에미터 기반 flat light lamp 개발연구를 진행하였다. 이때 사용한 금속전극은 2 mm 두께를 갖는 4.6인치 소다라임 글라스 위에 패턴 된 PR에 Ag를 sputtering하여 증착 후 PR을 lift-off하여 형성하였다. 이와 같이 형성된 금속전극은 ~1 ${\mu}m$와 12 nm의 두께와 표면단차를 각각 가지고 있었다. 형성된 금속전극 위에 유전체와 탄소나노튜브 에미터를 각각의 페이스트를 사용하여 스크린 인쇄와 소성과정을 통해 형성하였다. 이때 레이저 빔을 전극사이의 빈 공간에 조사하여 탄소나노튜브 에미터를 금속전극 위에 정밀하게 정렬하였으며 잔존하는 유기물과 유기용매를 없애기 위해 대기압 공기분위기의 $410^{\circ}C$에서 10분간 소성과정을 거친 후 접착테이프를 사용하여 잔탄 속에 있는 탄소나노튜브 에미터를 물리적 힘으로 수직하게 노출시켜 캐소드를 준비하였다. 애노드는 전계에 의해 방출된 전자의 측정과 전계방출 이미지를 얻기 위해서 P22 형광체와 Al박막이 증착된 2 mm 두께의 소다라임 글라스를 사용하였다. 캐소드와 애노드 사이의 간격은 6~10 mm로 유지하였고, 진공챔버의 기본 압력을 $5{\times}10^{-6}$ Torr 이하로 유지하였다. 캐소드와 게이트 전극에 1, 4 kHz와 3% duty를 갖는 bipolar 형태의 DC 사각펄스파를, 애노드에 ~18 kV의 DC 고전압을 각각 인가하여 평가하였으며 추후, 이렇게 제작된 다양한 선폭과 간격을 갖는 탄소나노튜브 에미터 기반 flat light lamp의 전계방출특성과 효율에 대한 비교 연구를 진행할 계획이다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.387-387
• /
• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.658-658
• /
• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.