• 제목/요약/키워드: Ferromagnetism

검색결과 152건 처리시간 0.027초

(Bi,Nd)(Fe,Ti)$O_3$ 다강체 세라믹 및 박막의 상변화 거동 (Phase Evolution Behavior of Multiferroic (Bi,Nd)(Fe,Ti)$O_3$ Ceramics and Thin Films)

  • 김경만;양판;이재열;이희영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.231-232
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    • 2008
  • The coupling between electric, magnetic, and structural order parameters results in the so-called multiferroics, which possess ferroelectricity, ferromagnetism, and/or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) allow potential applications in information storage, spintronics, and in magnetic or electric field sensors. Perovskite compound $BiFeO_3$ (BFO) is antiferromagnetic below Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature(RT) due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors which cause leakage in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is fabricating donor doped BFO compounds and thin films. We report here the successful fabrication of the Nd, Ti co-doped $BiFeO_3$ ceramics and thin films by pulsed laser deposition technique.

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A Possible Origin of Ferromagnetism in Epitaxial BiFeO3 thin Films

  • Chang, Jae-wan;Jang, Hyun M.;Kim, Sang-Koog
    • Journal of Magnetics
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    • 제11권3호
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    • pp.108-110
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    • 2006
  • We successfully enhanced the performance of a spin valve by inserting an ultra-thin layer of partially oxidized Fe in the pinned and free layers. With the exchange bias field kept large, the spin valve reached a GMR of 12%, which corresponded to a 55% increase in GMR when we compared it with that of spin valves without any inserted layer. The layer of partially oxidized Fe was more effective for improving the properties of the spin valve than the layer of partially oxidized $Co_{90}Fe_{10}$. Considering all the results, we can contribute the significant improvement to the combined effect of the modified local electronic structures at the Fe impurities and theenhanced spin-dependent reflections at the $\alpha-Fe_{2}O_{3} phase in the magnetic layer.

Effect of Tin Codoping on Transport and Magnetic Properties of Chromium-doped Indium Oxide Films

  • Kim, Hyo-Jin;Kim, Hyoun-Soo;Kim, Do-Jin;Ihm, Young-Eon;Choo, Woong-Kil;Hwang, Chan-Yong
    • Journal of Magnetics
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    • 제13권3호
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    • pp.88-91
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    • 2008
  • This study examined the effect of Sn co-doping on the transport and magnetic properties of Cr-doped $In_2O_3$ thin films grown on (100) silicon substrates by pulsed laser deposition. The experimental results showed that Sn co-doping enhances the magnetization and appearance of the anomalous Hall effect, and increases the carrier (electron) concentration. These results suggest that the conduction carrier plays an important role in enhancing the ferromagnetism of a laser-deposited Cr-doped $In_2O_3$ film, which may have applications in transparent oxide semiconductor spin electronics devices.

MnGeP2 박막의 자기수송 특성 (Magnetotransport Properties of MnGeP2 Films)

  • 김윤기;조성래
    • 한국자기학회지
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    • 제19권4호
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    • pp.133-137
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    • 2009
  • GaAs 기판 위에 증착된 $MnGeP_2$ 박막이 상온에서 강자성을 보임을 자기화 및 자기저항 측정을 통해 확인하였다. 강자성-상자성 전이 온도는 320 K 정도였고, 항자력장은 5, 250, 300 K에서 각각 3870, 1380, 155 Oe 정도였다. 전하 운반자가 스핀 편극되어 있음을 암시하는 비정상 홀 효과를 관측하였다. 자기장에 따른 자기저항과 홀 저항을 측정할 때 이력곡선이 나타남을 확인하였다. $MnGeP_2$ 박막과 n-형 GaAs 기판 사이에 I-V 측정을 통해 전형적인 p-n 다이오드 특성을 보임을 확인하였다.

Mn Thin Film on $BaTiO_3$ Substrate: Modified Electrical and Magnetic Properties

  • Tuan, Duong Anh;Cuong, Tran Viet;Shin, Yooleemi;Cho, Sunglae
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.162-162
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    • 2013
  • Magnetic properties of 3d transition metals were determined by exchange interaction between magnetic ions that was characterized by the exchange integral. Bulk Mn material is one of transition metals that have been well known as an anti-ferromagnetic material due to an anti-parallel spin with negative exchange integral. Here we report on the MBE growth of Mn on $BaTiO_3$ (001) substrate and induced ferromagnetism. The bcc ${\alpha}$-Mn single crystal film has been grown on $BaTiO_3$ (100) substrate. The XRD and Raman results indicated that the structural phase transitions of $BaTiO_3$ substrate induced a lattice distortion at the interface. Consequently, the grown Mn film exhibits ferromagnetism with strong saturation magnetization of 495 emu/$cm^3$ at 320 K. The electrical resistivity of the Mn film strongly depended on the crystal structure of $BaTiO_3$ substrate.

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4원 합금 AlGaAs2:Mn의 강자성 (Ferromagnetism of Chalcopyrite AlGaAs2:Mn Quaternary Alloys)

  • 강병섭
    • 한국재료학회지
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    • 제30권12호
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    • pp.666-671
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    • 2020
  • The electronic structure and magnetic properties of chalcopyrite (CH) AlGaAs2 with dopant Mn at 3.125 and 6.25 % concentrations are investigated using first-principles calculations. The CH AlGaAs2 alloy is a p-type semiconductor with a small band-gap. The AlGaAs2:Mn shows that the ferromagnetic (FM) state is the most energetically favorable one. The Mn-doped AlGaAs2 exhibits FM and strong half-metallic ground states.The spin polarized Al(Ga,Mn)As2 state (Al-rich system) is more stable than the (Al,Mn)GaAs2 state (Ga-rich system), which has a magnetic moment of 3.82mB/Mn. The interaction between Mn-3d and As-4p states at the Fermi level dominates the other states.The states at the Fermi level are mainlyAs-4p electrons, which mediate strong interaction between the Mn-3d and As-4p states. It is noticeable that the FM ordering of dopant Mn with high magnetic moment originates from the As(4p)-Mn(3d)-As(4p) hybridization, which is attributed to the partially unfilled As-4pbands. The high FM moment of Mn is due to the double-exchange mechanism mediated by valence-band holes.

Growth and characterization of superconductor-ferromagnet thin film heterostructure La1.85Sr0.15CuO4/SrRuO3

  • Kim, Youngdo;Sohn, Byungmin;Kim, Changyoung
    • 한국초전도ㆍ저온공학회논문지
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    • 제23권2호
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    • pp.10-13
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    • 2021
  • Superconductor-ferromagnet thin film heterostructure is an ideal system for studying the interplay between superconductivity and ferromagnetism. These two antagonistic properties combined in thin film heterostructure create interesting proximity effects such as spin-triplet superconductivity. Thin film heterostructure of optimally doped La2-xSrxCuO4(LSCO) cuprate superconductor and SrRuO3(SRO) ruthenate ferromagnet has been grown by pulsed laser deposition. Its temperature-dependent resistivity and Hall effect measurements show that our LSCO/SRO heterostructure has both superconductivity and ferromagnetism. In the Hall effect measurement results, we find additional hump-like structures appear in the anomalous Hall effect signal in the vicinity of superconducting transition. We conclude that giant magnetoresistance of the LSCO layer distorts the AHE signal, which results in a hump-like structure.

Effect of competition between superconductivity and ferromagnetism in GdBa2Cu3O7-x/La0.7Sr0.3MnO3 bilayers

  • Oh, Jun-Yung;Yang, Dong-Seok;Kang, Byeongwon
    • 한국초전도ㆍ저온공학회논문지
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    • 제24권2호
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    • pp.19-22
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    • 2022
  • We studied the effect of substrate-induced strain state on the superconducting transition in GdBa2Cu3O7-x(GdBCO)/La0.7Sr0.3MnO3 (LSMO) bilayers deposited on a LaAlO3 (LAO) substrate. The stain state of LSMO is controlled by increasing the thickness from 20 nm to 80 nm. Analyses on the extended X-ray absorption fine structure (EXAFS) measurements reveal difference in the direction of MnO6 octahedral distortion depending on the LSMO thickness, which leads to a difference in anisotropy of magnetization of LSMO layer. The superconducting transitions of our system are strongly correlated with the magnetic anisotropy accompanied by the MnO6 octahedron distortion in a specific direction. This result suggests the possibility of improving the superconducting transition in the GdBCO/LSMO bilayer system by controlling the degree of competition between superconductivity and ferromagnetism via adjusting strain state in the LSMO layer.

고온초전도 박막선재용 Ni-$W_{xat.%}$ 및 (Ni-$W_{3at.%}$)-$CU_{xat.%}$ 이축배향 금속 기판들의 자기적 특성 (Magnetic Properties of Both Ni-W and (Ni-3%W)-Cu Textured Substrates for ReBCO Coated Conductor)

  • 송규정;김태형;김호섭;고락길;하홍수;하동우;오상수;박찬;유상임;주진호;김민무;김찬중
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.28-29
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    • 2006
  • The magnetic properties of a series of both annealed and as-rolled Ni-$W_y$ alloy tapes with compositions y = 0, 1, 3, and 5 at.%, were studied. To compare with Ni-W alloys, the magnetic properties of a series of both annealed and as-rolled $[Ni_{97at.%}W_{3at.%}]_{100-x}Cu_x$ alloy tapes with compositions x = 0, 1, 3, 5 and 7 at.%, were studied, as well. Both the isothermal mass magnetization M(H) of a series of samples, such as both Ni-W and [Ni-W]-Cu alloy tapes, at different fixed temperatures and M(T) in fixed field, were measured using a PPMS-9 (Quantum Design). The degree of ferromagnetism of Ni-$W_y$ alloys have reduced as W-content y increases. Both the saturation magnetization $M_{sat}$ and Curie temperature $T_c$ decrease linearly with W-content y, and both $M_{sat}$ and $T_c$ go to zero at critical concentration of $y_c$ ~ 9.50 at.% W. The effect of Cu addition on both the saturation magnetization $M_sat$ and Curie temperature $T_c$ decrease linearly with Cu-content x in $[Ni_{97at.%}W_{3at.%}]_{100-x}Cu_x$ alloy tapes with compositions x = 0, 1, 3, 5, and 7 at.%. The results confirm that [Ni-W]-Cu alloy tapes can have much reduced ferromagnetism as Cu-content x increases.

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펄스 DC 마그네트론 스퍼터링법에 의한 Zn1-xCoxO 박막의 미세조직 및 자기적 특성 (Microstructure and Magnetic Properties of Zn1-xCoxO Film Prepared by Pulsed DC Magnetron Sputtering)

  • 고윤덕;고석배;최문순;태원필;김기출;김종민;서수정;김용성
    • 한국세라믹학회지
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    • 제42권3호
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    • pp.211-217
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    • 2005
  • 펄스 마그네트론 스퍼터링법을 이용하여 Co농도 변화에 따라 유리 기판 위에 ZnJ-xcoxo 박막을 제조하였다. Co 농도의 증가에 따라 $Zn_{1-x}Co_{x}O$ 박막의 c축 결정 배향성은 향상되었다. 표면 형상 분석을 통하여 매우 치밀한 박막이 성장되었음을 찰 수 있었다. 박막의 UV-visible투과율 측정 결과, $Co^{2+}$ 이온에 의한 sp-d상호교환 작용과 d-d 천이를 확인할 수 있었다. $Zn_{1-x}Co_{x}O$ 박막의 비저항은 $10^{-2}\~10^{-3}\;\Omega{\cdot}cm$의 값을 가지며 Co농도의 증가에 따라 박막의 비저항은 증가하였고, 특히 $30\;at\%$ Co에서는 박막의 결정성 저하로 인하여 급격한 비저항 증가가 발생하였다. X-ray photoelecoon specooscopy분석을 통해 Co와 O 간의 결합 상태를 확인하였으며, alternating gradient magnetometer측정 결과 $Zn_{1-x}Co_{x}O$ 박막의 상온 강자성 치력 현상을 관찰할 수 있었다. 낮은 비저항 및 상온 강자성 이력 특성을 갖는 $Zn_{1-x}Co_{x}O$ 박막은 자성 반도체 소자로의 응용 가능성을 나타내었다 .