• Journal of Magnetics
• /
• v.14 no.4
• /
• pp.161-164
• /
• 2009

Iron-doped $Sn_{1-x}Fe_xO_2$ (x = 0.0, 0.05, 0.1, 0.2, 0.33) thin films on Si(100) substrates and powders were prepared by a chemical solution process. The x-ray diffraction (XRD) patterns of the $Sn_{1-x}Fe_xO_2$ thin films and powders showed a polycrystalline rutile tetragonal structure. Thermo gravimetric (TG) - differential thermal analysis (DTA) showed the final weight loss above $430{^{\circ}C}$ for all powder samples. According to XRD Rietveld refinement of the powders, the lattice parameters and unit cell volume decreased with increasing Fe content. The magnetic properties were characterized using a vibrating sample magnetometer (VSM) and M$\ddot{o}$ssbauer spectroscopy. The thin film samples with x = 0.1 and 0.2 showed paramagnetic properties but thin films with x = 0.33 exhibited ferromagnetic properties at room temperature. Mossbauer studies revealed the $Fe^{3+}$ valence state in the samples. The ferromagnetism in the samples can be interpreted in terms of the direct ferromagnetic coupling of ferric ions via an electron trapped in a bridging oxygen deficiency, which can be explained using the F-center exchange model.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.53.2-53.2
• /
• 2008

• Journal of Magnetics
• /
• v.15 no.2
• /
• pp.51-55
• /
• 2010

The electronic and magnetic properties of Cu-doped GaN with a Cu concentration of 6.25% and 12.5% are examined theoretically using the full-potential linear muffin-tin orbital method. The magnetic moment of Cu atoms decreases with increasing Cu concentration. The spin-polarization of Cu atoms is reduced due to the Cu d-d interaction depending on the distance between the nearest neighbouring Cu atoms. Cu atoms exhibits a clustering tendency in GaN. For Cu-adsorbed GaN thin films with a surface coverage of 0.25, the ferromagnetic state is found to be the energetically favourable state with an induced magnetic moment of $0.54\;{\mu}_B$ per supercell.

• Journal of the Korean Vacuum Society
• /
• v.12 no.S1
• /
• pp.116-119
• /
• 2003

$Ni_2$MnGa films, deposited on mica and glass substrates, were studied by ferromagnetic resonance (FMR) technology. The temperature-dependent resonance field was measured and a martensitic phase transformation (MT) was found between 310 and 340 K, exhibiting an abnormality on the curve. The easy axis is found to be in the film plane. The line width increases as a whole with decreasing temperature, which is discussed in terms of the motional narrowing mechanism. The resonance field was also measured as a function of orientation and the results were fitted, exhibiting a good consistence.

• Journal of the Korean Magnetics Society
• /
• v.25 no.3
• /
• pp.74-78
• /
• 2015

We measured the low field microwave absorption (LFMA) and ferromagnetic resonance (FMR) signals at various magnetic field angle in exchange biased CoFe/MnIr thin film. The LFMA signals were dominantly related to the magnetization rotation process. In order to analyze the LFMA signal, we calculated transverse magnetization ($M_{\tau}$) and permeability (${\mu}_{\tau}$) for CoFe/MnIr thin film by using S-W model, which magnetic parameters of exchange bias ($H_{ex}$ = 58.5 Oe) and uniaxial anisotropy field ($H_k$ = 30Oe) was obtained from FMR signals. The LFMA signal at hard axis showed similar behavior compared with that of $M_{\tau}$. As the magnetic field angle approach to the perpendicular to hard axis, the LFMA signals were depending on both of $M_{\tau}$ and ${\mu}_{\tau}$.

• Journal of the Korean Magnetics Society
• /
• v.21 no.1
• /
• pp.10-14
• /
• 2011

We have measured the ferromagnetic resonance (FMR) signal in as deposited and $400^{\circ}C$ annealed CoFeB/MgO thin film to investigate the annealing effect on magnetic anisotropies and FMR linewidth (${\Delta}H_{PP}$). The uniaxial anisotropy field ($H_{K1}$) was only observed in the as deposited sample. Whereas, in the $400^{\circ}C$ annealed sample, the biaxial anisotropy field ($H_{K2}$) was additionally observed in accompany with uniaxial anisotropy field ($H_{K1}$). The appearance of biaxial anisotropy fields was originated from the crystalline growth of bcc CoFeB(001) from the MgO(001) interface and by the B diffusion during thermal annealing. Also, the ${\Delta}H_{PP}$ of $400^{\circ}C$ annealed sample was increased compared with that of as deposited sample, which was due to the broad distribution of the magnetization axis by the biaxial anisotropy.

• Journal of the Korean Magnetics Society
• /
• v.24 no.2
• /
• pp.60-65
• /
• 2014

We obtained resonance field ($H_{res}$) and linewidth (${\Delta}H_{PP}$) from measured ferromagnetic resonance signal in the functions of polar angle (${\Theta}_H$) in Ni thin film of 240 nm thickness fabricated by electrodeposition method. The angular dependence of $H_{res}$ was well fitted with the calculated ones. We confirmed that the g-factor and effective demagnetization field were 2.18 and 445 emu/cc by the theoretical analysis of the resonance field, respectively. The angular dependence of ${\Delta}H_{PP}$ showed very large values at in-plane direction (${\Theta}_H=90^{\circ}$), which could not explained by the homogenous linewidth due to the Gilbert damping and inhomogeneous linewidth due to the angular variations and magnetization variations by the surface layer. Therefore, we considered the spin wave scattering (two magnon scattering) process in order to analyze the measured inhomogeneous linewidth, which was appeared in thicker film than the critical thickness of 50 nm. The defect medicated spin wave scattering played a key role in the electrodoposited Ni thin film of 240 nm thickness.

• Journal of Magnetics
• /
• v.13 no.2
• /
• pp.61-64
• /
• 2008

We studied the effect of the variation of the lattice constant on the electrical properties of $SrRuO_3$ thin films. In order to obtain films with different volumes, we varied the substrate temperature and oxygen pressure during the growth of the films on $SrTiO_3$ (001) substrates. The films were grown using a pulsed laser deposition method. The X-ray diffraction patterns of the grown films at low temperature and low oxygen pressure indicated the elongation of the c-axis lattice constant compared to that of the films grown at a higher temperature and higher oxygen pressure. The in-plane strain states are maintained for all of the films, implying the expansion of the unit-cell volume by the oxygen vacancies. The variation of the electrical resistance reflects the temperature dependence of the resistivity of the metal, with a ferromagnetic transition temperature inferred form the cusp of the curve being observed in the range from 110 K to 150 K. As the c-axis lattice constant decreases, the transition temperature linearly increases.

• Journal of the Korean Magnetics Society
• /
• v.12 no.5
• /
• pp.163-167
• /
• 2002

In order to study the temperature dependence of the magnetostatic wave modes for an YIG thin film, grown by a liquid phase epitaxy method, The ferromagnetic resonance was performed by an FMR spectrometer in the temperature range -140$\^{C}$∼200$\^{C}$. The magnetostatic surface wave and backward volume wave modes show periodic excitations in parallel configuration. The resonance fields of all modes and intensities decreased with decreasing the temperature. All magnetostatic modes can be well explained by the Walker and Damon-Eshbach theory. The calculated saturation magnetization Ms of the YIG thin film was increased with decreasing the temperature. The line widths of magnetostatic modes changed in various trends with decreasing the temperature.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.304-305
• /
• 2013

We report a positive exchange bias (HE) in thinmultilayered filmscontaining nano-oxide layer. The positive HE, obtained for our system results from an antiferromagnetic coupling between the ferromagnetic (FM) CoFe and the antiferromagnetic (AFM) CoO layers, which spontaneously form on top of the nano-oxide layer (NOL). The shift in the hysteresis loop along the direction of thecooling field and the change in the sign of exchange bias are evidence of antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. Our calculation indicates that uncompensated oxygen moments in the NOL results in antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. One of the interesting features observed with our system is that it displays the positive HE even above the bulk Neel temperature (TN) of CoO. Although the positive HEsystem has a different AFM/FM interfacial spin structure compare to that of the negative HE one, the results of the angular dependence measurements show that the magnetization reversal mechanism can be considered within the framework of the coherent rotation model.