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http://dx.doi.org/10.4283/JMAG.2010.15.2.051

Electronic Structure and Magnetic Moments of Copper-atom in/on GaN Semiconductor  

Kang, Byung-Sub (BK 21 Physics program and Department of Physics, Chungbuk National University)
Lee, Haeng-Ki (Department of Radiotechnology, Daegu Polytechnic College)
Publication Information
Journal of Magnetics / v.15, no.2, 2010 , pp. 51-55 More about this Journal
Abstract
The electronic and magnetic properties of Cu-doped GaN with a Cu concentration of 6.25% and 12.5% are examined theoretically using the full-potential linear muffin-tin orbital method. The magnetic moment of Cu atoms decreases with increasing Cu concentration. The spin-polarization of Cu atoms is reduced due to the Cu d-d interaction depending on the distance between the nearest neighbouring Cu atoms. Cu atoms exhibits a clustering tendency in GaN. For Cu-adsorbed GaN thin films with a surface coverage of 0.25, the ferromagnetic state is found to be the energetically favourable state with an induced magnetic moment of $0.54\;{\mu}_B$ per supercell.
Keywords
nonmagnetic dopant; ferromagnetic ordering; thin film;
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