• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.7
• /
• pp.611-615
• /
• 2003

Eu-doped lead zirconate titanate(Pb$\sub$1.1/(Zr$\sub$0.6/Ti$\sub$0.4/)O$_3$; PZT) thin films on the Pt/Ti/SiO$_2$/Si substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Eu content. Eu-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Eu content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Eu content. The 0.5 mol% of Eu-doped PZT thin film showed improved fatigue characteristic comparing to the undoped PZT thin film.

• Journal of Magnetics
• /
• v.11 no.4
• /
• pp.164-166
• /
• 2006

We have investigated the dielectric and magnetic properties of ferroelectric-antiferromagnetic $BaTiO_{3}-LaMnO_{3}$ composite with changing relative mole percents. Due to high sintering temperature, i.e. $1150^{\circ}C$, the Ba ion in $BaTiO_{3}$ seems to diffuse into $LaMnO_{3}$; resulting in $BaTiO_{3}-(La,Ba)MnO_{3}$ ferroelectric-ferromagnetic composite. At room temperature, $0.9BaTiO_{3}-0.1LaMnO_{3}$ composite exhibits considerable magnetization (${\sim}0.7\;emu/g\;at\;2000\;Oe$) and low coercive field (${\sim}5\;Oe$). Also it exhibits high dielectric constant (${\sim}560$) and low loss (${\sim}0.08$) at 10 kHz. This result may imply that $BaTiO_{3}-LaMnO_{3}$ could be suitable for a low leakage multiferroic composite.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.58 no.12
• /
• pp.2431-2435
• /
• 2009

The heterolayered BT/BNT thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt. We report the improved ferroelectric and dielectric properties in the heterolayered tetragonal/rhombohedral structure composed of the BT and the BNT thick films. We investigated the effects of deposition conditions on the structural and electrical properties of the heterolayered BT/BNT thick films. The dielectric properties of the heterolayered BT/BNT thick films were superior to those of single composition BNT, and those values for the heterolayered BT/BNT thick films were 1455, 0.025 and $12.63 {\mu}C/cm^2$.

• Applied Science and Convergence Technology
• /
• v.24 no.3
• /
• pp.47-52
• /
• 2015

The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.217-221
• /
• 1997

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

• Journal of the Korean Ceramic Society
• /
• v.32 no.10
• /
• pp.1178-1188
• /
• 1995

Bi4Ti3O12 (BIT) and its rare earth (Y, Nd, Sm, Gd)-substituted derivatives were synthesized using a sol-gel method to investigate their microstructures, cystal structures and electrical properties depending on the subsituted elemetns. Nd- or Sm-substitution into BIT appeared to be favorable, while Y- or Gd-substitution occurred with a pyrochlore phase. This suggests that a smaller trivalent rare earth ion may not be favorable in the structure of BIT. The rare earth derivatives showed that their particle sizes and shapes were considerably different depending on the kinds of substituted elements. Y-substitution resulted in developing a relatively even particle size and a dense microstructure. In structure, they may be similar to the pseudo-orthorhombic BIT but close to a paraelectric tetragonal phase. Their a (or b) axes were shortened, compared to the one of BIT. Such a distortion may result a decrease in the tilting of TiO6. BIT and the derivatives showed that their dielectric constants and losses were 40~120 and less than 0.03, respectively in the frequency range of 1~10 MHz. The dielectric loss of Y-substituted derivative was the lowest one and changed a little to frequency. Curie points were observed in all the derivatives like BIT to suggest that they would be ferroelectric. The temperature stability of the delectric properties of the derivatives below the Curie points were relatively better than the one of BIT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.656-658
• /
• 2004

Pb$(Zr_{0.8}Ti_{0.2})TiO_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70\sim90{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$t were approximately 676 and 1.4%, respectively. The remanent polarization and the coercive field of the PZT thick film sintered at $1050^{\circ}C$ were $21.15{\mu}C/cm^2$ and 10.1 kV/cm, mapetively

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.167-167
• /
• 2008

The barium strontium calcium titanate powders were prepared by sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. And we investigated the structural and dielectric properties of BSCT thick films with the variation of sintering temperature. As a result of thermal analysis, BSCT polycrystalline perovskite phase was formed at around $660^{\circ}C$. The results of X-ray diffraction analysis were showed a cubic perovskite structure without presence of the second phase in all BSCT thick films. The average grain size and the thickness of the specimen sintered at $1450^{\circ}C$ were about 1.6 mm and 45 mm, respectively. The relative dielectric constant increased and the dielectric loss decreased with increasing the sintering temperature, the values of the BSCT thick films sintered at $1450^{\circ}C$ were 5641 and 0.4% at 1kHz, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.10
• /
• pp.620-624
• /
• 2016

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.7
• /
• pp.541-545
• /
• 1998

(PZT, PST, PT)/ YBCO structured have been grown on single crystal $LaAlO_3$ using in-situ Nb:YAG pulsed laser deposition technique. The optimum conditions of fabrication for high quality films have been established under various oxygen pressure. TBCO was used as a metallic electrode for polarizing ferroelectric thin fillms. Lattice mismatch of these materials were found to be with in 3%. As a result XRD patterns and rocking curves, (PZT, PST, PT)/ YBCO multiayered thin films on $LaAlO_3$ substrates showed preferred orientation to c-axis. For invastigation on electrical properties of ferroelectric thin films, remanent polaiztion $P_r$ and coercive field $E_c$ were measured for three samples. At each optimum condition, they showed the values of P_r=60 \mu C/cm^2 and E_c=240kV/ cm for PT, 30\mu C/cm^2 and 105kV/cm for PZT, 1.5\mu C/cm^2$ and 15kV/cm for PST. Frequency dependence of dielectric properties of ferroelectric thin fillms was also investigated. As a result, it showed the frequency dependence was relatively small in the range of 10Hz~10kHz.